RM73B Search Results
RM73B Price and Stock
KOA Speer Electronics Inc RM73B2BT121JRes Thick Film 1206 120 Ohm 5% 0.25W(1/4W) ±200ppm/°C Molded SMD Automotive Punched Paper T/R |
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RM73B2BT121J | 25,149 |
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MISC. RESISTORS RM73B2B511J |
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RM73B2B511J | 245 |
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MISC. RESISTORS RM73B2B623J |
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RM73B2B623J | 200 |
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KOA Speer Electronics Inc RM73B1JT103J |
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RM73B1JT103J | 206,414 |
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KOA Speer Electronics Inc RM73B1J220JT |
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RM73B1J220JT | 140,447 |
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RM73B Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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RM73B1JT105J |
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RSM, TKF 1M 1/10W 5% 0603 | Original | 96.14KB | 2 | |||
RM73B1JT105J |
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RSM, TKF 1M 1/10W 5% 0603 | Original | 96.14KB | 2 | |||
RM73B2AT822 |
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RES,THICK FILM,8.2KOHMS,150WV,2±% TOL,0805-CASE | Scan | 474.69KB | 5 | |||
RM73Bxx Series |
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Flat Chip Resistors | Scan | 474.7KB | 5 |
RM73B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RM73B2A-J
Abstract: RK73H2B-F RM73B2B-J RK73H2A-F RM73B1J-J 22k resistor 200 watt RK73H1J-F RM73B1J
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RM73B2B-J RM73B2A-J RM73B1J-J RK73H2B-F RK73H2A-F 22k resistor 200 watt RK73H1J-F RM73B1J | |
MGA-633P8
Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
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MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8 | |
Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of |
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MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN | |
RM73B1J
Abstract: 104021
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504bD87 00D1721 RM73B1J 104021 | |
Contextual Info: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available |
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504bD87 00D1721 | |
11x11mm
Abstract: cl21b103kbnc SAMSUNG SAMSUNG 0805 thick film resistor CL21B103KB 50V 10uF X7R keystone 1028 AN-1030 HIP6311 IP2001 TP10
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94089D iP2001 iP2001 11x11mm cl21b103kbnc SAMSUNG SAMSUNG 0805 thick film resistor CL21B103KB 50V 10uF X7R keystone 1028 AN-1030 HIP6311 TP10 | |
AGR09030GUM
Abstract: JESD22-C101A RF35
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AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35 | |
eeprom programmer schematic 24c08
Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
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SPWA023 1000PF DS0026-001 eeprom programmer schematic 24c08 motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331 | |
Ferrite core 13.56 MHz RFID tag inductor antennas
Abstract: OMRON TIMER H2a RFID loop antenna 13.56MHz 3-pin D128 transistor RFID pcb antenna 13.56MHz TB031 CIRCUIT SCHEMATIC CAR ECU PIC16C63A-04/SP schematic diagram of active rfid tag RFID loop antenna 13.56MHz spiral
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MCRF355/360 /DS21299C Ferrite core 13.56 MHz RFID tag inductor antennas OMRON TIMER H2a RFID loop antenna 13.56MHz 3-pin D128 transistor RFID pcb antenna 13.56MHz TB031 CIRCUIT SCHEMATIC CAR ECU PIC16C63A-04/SP schematic diagram of active rfid tag RFID loop antenna 13.56MHz spiral | |
Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available |
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120/yin/3 D17E1 | |
C1206C104KRAC7800
Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
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AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW | |
RM73B2B
Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
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MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 |
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MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 | |
Contextual Info: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier |
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MRF284 MRF284LR1 MRF284LSR1 | |
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mrf5s21090Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
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MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 | |
100B471JP200X
Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
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MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X | |
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. H suffix indicates lower thermal resistance package. The RF MOSFET Line |
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MRF5S19100L/D MRF5S19100LR3 MRF5S19100LSR3 MRF5S19100HR3 MRF5S19100HSR3. MRF5S19100LR3 MRF5S19100LSR3 | |
ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
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MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 | |
TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
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MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 TO272 RM73B2BT A113 GRM42 MWIC930GR1 2XE3 | |
Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 |
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MRF21090/D MRF21090 MRF21090S | |
j340 motorola makeContextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 |
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MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make | |
Contextual Info: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier |
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MRF5S19090H MRF5S19090HR3 MRF5S19090HSR3 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier |
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MRF284 MRF284LR1 MRF284LSR1 MRF284 | |
ferroxcube for ferrite beads
Abstract: MRF282
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MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads |