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Advanced Semiconductor Inc AGR09045EF RF MOSFET Transistors RF Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR09045EF					1 $39.76 10 $35.43 100 $31.1 1000 $29.99 10000 $29.99	Get Quote

AGR09045EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR09045EF		Agere Systems	45 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09045EF		PEAK Electronics	45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR09045EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
agere c8 c1 Abstract: 100b8r2jw 100B6R8JW Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J
RM73B2B103J Abstract: C1206C104KRAC7800 100B100JW DS02-219RFPP Text: Preliminary Data Sheet July 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS03-058RFPP DS02-219RFPP) RM73B2B103J C1206C104KRAC7800 100B100JW DS02-219RFPP
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS04-026RFPP DS03-058RFPP)
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222 Text: Preliminary Data Sheet April 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-150RFPP DS04-026RFPP) AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS04-198RFPP DS04-150RFPP)
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E AGR09045EU AGR09045EF AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J