Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AGR09045EU Search Results

    AGR09045EU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR09045EU Agere Systems 45 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09045EU PEAK Electronics 45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR09045EU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    agere c8 c1

    Abstract: 100b8r2jw 100B6R8JW
    Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J
    Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J

    RM73B2B103J

    Abstract: C1206C104KRAC7800 100B100JW DS02-219RFPP
    Text: Preliminary Data Sheet July 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 DS03-058RFPP DS02-219RFPP) RM73B2B103J C1206C104KRAC7800 100B100JW DS02-219RFPP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 DS04-026RFPP DS03-058RFPP)

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original
    PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222
    Text: Preliminary Data Sheet April 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 AGR09045E DS04-150RFPP DS04-026RFPP) AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 DS04-198RFPP DS04-150RFPP)

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09045E Hz--895 AGR09045E AGR09045EU AGR09045EF AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J