RQS SERIES Search Results

Contextual Info: Voltage Controlled Oscillator - VCO RQS-Series Features Applications ! ! ! ! ! ! ! ! Frequency Range up to 2.5 GHz Low Profile, below 2 mm Low Phase Noise Low Power Consumption Wireless Networks Cordless Phones Telecommunications Navigation Description The RQS-series is ideally suited for cost-sensitive applications. With its small dimensions

217F

Contextual Info: Features Unregulated Converters ● ● ● ● ● ECONOLINE 1kVDC Isolation Internal SMD Construction UL94V-0 Package Material Toroidal Magnetics Efficiency to 80% DC/DC-Converter RQS & RQD Series Selection Guide Part Number Input Voltage Output Voltage

217F

Abstract: RECOM RQS-0505R
Contextual Info: Features Unregulated Converters ● ● ● ● ● ECONOLINE 1kVDC Isolation Internal SMD Construction UL94V-0 Package Material Optional Continuous Short Circuit Protected Efficiency to 80% DC/DC-Converter RQS & RQD Series Selection Guide Part Number Input

MQE MURATA vco

Abstract: MQE MURATA MQE 001 MQE vco MURATA MQE MQE 50 vco murata vco specification
Contextual Info: Voltage Controlled Oscillator - VCO RQS-Series Features Applications ! ! ! ! ! ! ! ! Frequency Range up to 3.5 GHz Compatible to Murata MQE-series Low Profile, 1.9 mm Low Power Consumption Wireless Networks Cordless Phones Telecommunications Navigation Description

Contextual Info: Voltage Controlled Oscillator - VCO RQS-Series 1. FEATURES ! Frequency Range up to 2.5 GHz ! Super Compact SMT-Package: 8.0 x 6.0 [mm] ! Low Profile: 2.0 [mm] 2. APPLICATIONS ! ! ! ! PCS VSAT DECT CDMA ! ! ! ! GSM CATV WLAN GPRS 3. MECHANICAL SPECIFICATION

Contextual Info: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

217F

Contextual Info: Features Unregulated Converters ● ● ● ● ● ECONOLINE 1kVDC Isolation Internal SMD Construction UL94V-0 Package Material Optional Continuous Short Circuit Protected Efficiency to 80% DC/DC-Converter RQS & RQD Series Selection Guide Part Number SMD

Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

9V24V

Contextual Info: ECONOLINE - DC/DC-Converter RQS / RQD Series, 0.25 Watt, SMD Single & Dual Output Features ● ● ● ● ● 1kVDC Isolation Efficiency to 73% UL 94V-0 Package Material Toroidal Magnetics Internal SMD Construction Selection Guide Part Number SMD Input

Contextual Info: f T DG133/134/141 Dual SPST JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • Low Standby Power < 1 p.W • Minimizes Standby Power Requirement • Portable and Battery Powered Systems • Bipolar Drivers • Better Radiation Tolerance • Constant rQS(ON)

Contextual Info: Voltage Controlled Oscillator - VCO RQS-Series Fe a t ure s Applic a t ions Frequency Range up to 3.5 GHz Compatible to Murata MQE-series Low Profile, 1.9 mm Low Power Consumption Wireless Networks Cordless Phones Telecommunications Navigation

Contextual Info: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs

IRFP152

Abstract: IRFP153
Contextual Info: [MMiRi-lMS [FUT FIELD EFFECT POWER TRANSISTOR IRFP152,153 33 AMPERES 100, 60 VOLTS RqS ON = 0-08 Cl This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: 3 FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 2A, 500V, rQS oN) = 2.50Q • Total Dose - Meets Pre-Rad Specifications to 100KRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects

21N60

Abstract: a 1712 mosfet s300h 21N55 247 AA
Contextual Info: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous

19P20

Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Contextual Info: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr

Contextual Info: i X y s lflE D coRP 000Db32 □ IX Y S S 1-3^1-13 IXTE10N60X4 MAXIMUM RATINGS PER DEVICE Parameter Sym. IXTE10N60X4 Drain-Source Voltage (1) Voss 600 Vdc Drain-Gate Voltage (Rqs = 1.0MO) (1) Vdgr 600 Vdc Vqs ±20 Vgsm ±30 Vdc V Id 10 Ado Drain Current Pulsed (3)

40N25

Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Contextual Info: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300

Contextual Info: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)

Contextual Info: a a h a r r i s S E M I C O N D U C T O R FSL110D, FSL110R W " M M W • ■ 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3.5A, 100V, rQs oN “ 0.600Q The Discrete Products Operation of Harris Semiconductor

Contextual Info: 2} H a rris RFL1N18 RFL1N20 N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 F eatures P ackage T 0 -2 0 5 A F B O TT O M VIEW • 1A, 180V and 200V • rQs on = 3.65ft • S O A is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds

Contextual Info: I X Y S CORP I f lE 4b ñ b 55 b D □ O □ □ a3 tt □ IX Y S T - 3 ° i -\3 I X T E 25 N 10 X 4 MAXIMUM RATINGS (PER DEVICE Parameter Sym. Drain-Source Voltage (1) Voss Drain-Gate Voltage (Rqs = 1-OMft) (1) Vd g r Gate-Source Voltage Continuous Gate-Source Voltage Transient

SEM 2005 16 PINS

Abstract: sem 2005 640 4 channel long range RF based remote control star delta connection circuit diagrams RF based remote control SEM 2005 IEEE488 NI-488
Contextual Info: Contents SPECTRUM ANALYZERS 3280 & 3280A Series Programming Manual Document part no. 46892/768 SPECTRUM ANALYZERS 3280 & 3280A SERIES Programming manual 3281/3281A 3 Hz–3.0 GHz 3282/3282A 3 Hz–13.2 GHz 3283/3283A 3 Hz–26.5 GHz Aeroflex International Ltd. 2009

amf panel

Abstract: Gpib to tds 3000 AU 4136 PC bit 3252 AMF 4.0 DATASHEET D-SUB 9 PIN MALE CONNECTOR Gpib IEEE488 NI-488 GPIB32
Contextual Info: Contents SPECTRUM ANALYZERS 3250 Series Programming Manual Document part no. 46892/975 SPECTRUM ANALYZERS 3250 SERIES Programming manual 3251 3252 3253 3254 1 kHz–3.0 GHz 1 kHz–8.0 GHz 1 kHz–13.2 GHz 1 kHz–26.5 GHz Aeroflex International Ltd. 2009