S10104 Search Results
S10104 Price and Stock
Hammond Manufacturing CS10104BOX STEEL GRAY 10"L X 10"W |
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CS10104 | Bulk | 122 | 1 |
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CS10104 | 9 |
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CS10104 | Bulk | 2,064 | 1 |
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CS10104 | 1,343 | 1 |
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Rochester Electronics LLC DS1010-400DS1010 10-TAP SILICON DELAY LINE |
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DS1010-400 | Tube | 74 |
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Pentair Equipment Protection - Hoffman S101046G060AC 400 460V 50 60HZ 1000W COMM |
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Pentair Equipment Protection - Hoffman S101046G050AC 400 460V 50 60HZ 1000W |
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Omega Engineering FGS101-040LSEHEATER TAPE, HIGH TEMPERATURE, 4 |
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FGS101-040LSE | Bulk | 9 Weeks | 1 |
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S10104 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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6189B
Abstract: CB4075
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SUP40N10-30-GE3 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 6189B CB4075 | |
Contextual Info: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si4666Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition |
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Si4666DY 2002/95/EC Si4666DY-T1-GE3 18-Jul-08 si4666 | |
Contextual Info: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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Si8800EDB 2002/95/EC 18-Jul-08 | |
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS414DN 2002/95/EC SiS414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition |
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Si4666DY 2002/95/EC Si4666DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
S10011
Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
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S10000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S10011 S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115 | |
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS414DN 2002/95/EC SiS414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
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SUP40N10-30-GE3 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si4228DY
Abstract: si4228
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Si4228DY 2002/95/EC Si4228DY-T1-GE3 18-Jul-08 si4228 | |
Si7120ADN
Abstract: 72959
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Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 18-Jul-08 72959 | |
Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition |
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Si4228DY 2002/95/EC Si4228DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si4204DY 2002/95/EC Si4204DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
marking D3 TSOP-6Contextual Info: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking D3 TSOP-6 | |
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Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
Original |
SUP40N10-30-GE3 2002/95/EC O-220AB 11-Mar-11 | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SUP40N10-30-GE3Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
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SUP40N10-30-GE3 2002/95/EC O-220AB 18-Jul-08 SUP40N10-30-GE3 | |
Si7858BDP
Abstract: SI7858BDP-T1-GE3
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Original |
Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 18-Jul-08 | |
sis414DN
Abstract: 1047 diode
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Original |
SiS414DN 2002/95/EC SiS414DN-T1-GE3 25lectual 18-Jul-08 1047 diode | |
Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition |
Original |
Si4666DY 2002/95/EC Si4666DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
SiS414DN 2002/95/EC SiS414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
Original |
Si4204DY 2002/95/EC Si4204DY-T1-GE3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
Original |
Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si4204DY 2002/95/EC Si4204DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |