SAMSUNG MEMORY 2048 Search Results

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

Samsung k9f1208u

Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Contextual Info: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.

Contextual Info: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung

K9HDG08U1A

Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Contextual Info: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

Contextual Info: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7 RbM lM2 0 0 1 S 224 KMM5816100/T 343 I SM6 K DRAM MODULES 16 M x8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5816100/T is a 16M bitx8 Dynamic RAM high density memory module. The Samsung

Contextual Info: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

74lvc3245

Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
Contextual Info: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04

KMM5324100V

Contextual Info: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit

dram simm memory module samsung 30-pin 16M

Abstract: 16M 30-pin SIMM
Contextual Info: KMM5816100/T DRAM MODULES 1 6 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816100/T is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816100/T consist of eight KM41C16000J/T DRAMs

samsung rfs

Abstract: SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer
Contextual Info: Introduction to Samsung’s Linux Flash File System - RFS Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.

K9F1G08

Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Contextual Info: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

s3c2442

Abstract: sc32442 Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash
Contextual Info: Samsung SC32442 MSP Multi Stacked Package Leading-Edge Application Processor with single package incorporating Memory MCP Product Brief SC32442 MSP product is a proprietary solution provided exclusively by Samsung Electronics. SC32442 includes an S3C2442 AP

SAMSUNG DDR4

Abstract: samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung
Contextual Info: Optimizing Virtualization using Advanced Memory and Storage Technology Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing, Samsung Steve Weinger, Director, Flash Marketing, Samsung 1/? No.2 for 8 years in Semiconductor Industry *Source : Gartner March 2010

dram simm memory module samsung 30-pin 16M

Contextual Info: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin

KMM5364100-7

Abstract: Ras 1220
Contextual Info: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit

Contextual Info: KMM366F400CK1 KMM366F410CK1 DRAM MODULE KMM366F400CK1 & KMM366F410CK1 EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0CK1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULE KMM53221OOCKU/CKUG KMM53221 OOCKU/CKUG with Fast Page Mode 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53221OOCKU is a 2Mx32bits RAM high density memory module. The Dynamic • Part Identification Samsung

samsung xsr

Abstract: NAND XSR onenand xsr XSR Porting Guide oneNand flash samsung nand flash onenand block header samsung flash bad block mapping STL Porting Guide
Contextual Info: XSR1.5 WEAR LEVELING Application Note May-2007, Version 1.0 Copyright Notice Copyright 2007, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks XSR is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.

km48v2104bs

Abstract: KM48V2104BK KM48V2104B
Contextual Info: DRAM MODULE KMM372F213BK/BS KMM372F213BK/BS Fast Page with EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F213B

Contextual Info: KMM366F400CK KMM366F410CK DRAM MODULE KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung

samsung tfs4

Abstract: 39TB TFS4 Samsung "Flash "
Contextual Info: TFS4 CONFIGURING CLUSTER SIZE Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.