SHARP LH531 Search Results

sharp mask rom

Abstract: LH53820 LH5322 lh5384
Contextual Info: SHARP CORP bGE D • 000^435 40 e! f l l f l ü ? » S R P J T - H é - o - jS SHARP LH5316400D ■ M Description The LH5316400D is a 16M bit CMOS mask ROM organized as 2,0 97 ,1 5 2 x8 bits. It is packaged in 36-pin DIP which provides mask ROM specific pinout compatible with 28-pin 1 M mask ROM.

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

cey marking code

Abstract: 816P
Contextual Info: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics

LH531000

Abstract: KS-86C004 sharp mask rom
Contextual Info: \. .y . SHARP CORPORATION NO. KS-86C004 TECHNICAL LITERATURE FOR CMOS 1M Mask ROM MODEL n o . L H 5 3 1 Q 0 Q DATE_ J a n u a r y 31 , 1986 * This technical li t e r a t u r e i s subject to change without n o tice . * S H A R P I N T E G R A T E D

Contextual Info: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.

LH537

Abstract: NAE03
Contextual Info: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.

40-pin EPROM pinout

Abstract: ta 1275 az
Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TO P VIEW • Access time: 100 ns (MAX.) / NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 |j.W (MAX.)

531024

Abstract: 40-pin EPROM pinout
Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization C M O S 1M 64K x 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) s NC • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 jiW (MAX.) CË • Static operation

sharp mask rom

Abstract: DIP028-P-0600
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) The LH531000B is a m ask-program mable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

531000B

Abstract: 531000
Contextual Info: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:

sharp mask rom

Contextual Info: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

Contextual Info: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

IC 2030 PIN CONNECTIONS

Contextual Info: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)

Contextual Info: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)

sharp lh531

Abstract: sharp mask rom
Contextual Info: CMOS 1M 128K FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX. • Low power consumption: Operating: 192.5 mW (MAX.) x 8) Mask Programmable ROM DESCRIPTION The LH531000B is a mask programmable ROM organized as 131,072 x 8 bits. It is fabricated using

Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 MROM PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W 4 0 -P IN S O P • Access time: 100 ns (MAX.) - S NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.)

LH5316000

Abstract: lh53 64pin
Contextual Info: CMOS 16M 2M x 8 / 1M x 16 Mask-Programmable ROM LH 5316000 FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) DESCRIPTION The LH5316000 is a mask-programmable ROM

Contextual Info: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

431 capacitor NCC

Contextual Info: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)

Contextual Info: PRELIMINARY LH5316501 C M O S 16M 2M x 8 / 1M x 16 M a s k -P ro g ra m m a b le ROM FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages:

D416C

Abstract: dsc d-13
Contextual Info: LH5316500A FEATURES • 2 ,0 9 7 ,1 5 2 x 8 bit organization Byte mode 1 ,048,576 x 16 bit organization (Word mode) • • Access time: 150 ns (M AX.) Power consumption: Operating: 2 7 5 m W (M AX.) Standby: 550 jiW (M AX.) • Fully-static operation •

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:

Contextual Info: LH5316500C FEATUR ES • 2,097,152 words Byte mode 1,048,576 words (Word mode) C M O S 16M (2M x 8/1M x 16) M a sk -P ro g ra m m a b le R O M PIN CONNECTIONS x 8 bit organization 42-PIN DIP x 16 bit organization • Access time: 150 ns (MAX.) TOP VIEW s