SI PIN PHOTODIODE MODULE Search Results

S8221

Abstract: G8337
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8221/G8337 series Receptacle type, 0.8 µm, 1.25, 2.1 Gbps S8221/G8337 series are high-speed receivers specifically developed for 0.8 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity Si or GaAs PIN photodiode integrated with a high-speed preamp and integrated in a receptacle module.

high speed photodiode detector circuit

Abstract: KDP6004A PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode 700NM IR photodiode ir photodiode wavelength
Contextual Info: Silicon PIN Photodiode KDP6004A Dimensions The KDP6004A is high-speed silicon pin photodiode [Unit : mm] in COB package and responds to wavelengths from 700nm to 1050nm. Features Higly sensitive Si PIN photodiode. Chip On Board package. High speed response.

IR photodiode

Abstract: PIN Photodiode vr 1K 700NM photodiode si pin photodiode KDP6004A rise time of photodiode rise time of silicon photodiode 1K VR
Contextual Info: NEW PRODUCT Silicon PIN Photodiode KDP6004A Description The KDP6004A is high-speed silicon pin photodiode in COB package and responds to wavelengths from 700nm to 1050nm. Features - High sensitive Si PIN Photodiode - Chip on Board Package - High Speed Response

TO-8 SOCKET

Abstract: S5973 TO8 socket C8366 hirose HR10 HR10-7P-4S Photodiode photodiode amplifier 4-Pin HIROSE S3071
Contextual Info: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection

TO8 socket

Abstract: C8366 S3071 S3399 S3883 S5821 S5971 S5972 S5973 Photodiode, TO-5,
Contextual Info: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection

TO8 socket

Contextual Info: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection

VFIR

Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
Contextual Info: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at

SI 13003

Abstract: X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm SD150-13-003 VCSEL die bonding 850nm photodiode
Contextual Info: SD150-13-003 4 Mbps Si PIN Photodiode Chip The SD150-13-003 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at

G8337

Abstract: S8221 S8335 S-8335
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8335/S8221/G8337 series Receptacle type, 0.65/0.8 µm, 500 Mbps/1.25 • 2.1 Gbps S8335/S8221/G8337 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices

PREAMP circuit diagram

Contextual Info: MITSUBISHI OPTICAL DEVICES FU-311SPP-C4 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-311SPP-C4 is InGaAs pin photodiode module with Si preamplifier, designed for use in high-speed, long haul optical communication systems.

PREAMP circuit diagram

Contextual Info: MITSUBISHI OPTICAL DEVICES FU-311SPP-C3 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-311SPP-C3 is InGaAs pin photodiode module with Si preamplifier, designed for use in high-speed, long haul optical communication systems.

InGaAs

Abstract: photodiode preamplifier AGC FU-311SPP-CV3 Si pin photodiode module
Contextual Info: TZ7-99-407 2/4 MITSUBISHI (OPTICAL DEVICES) FU-311SPP-CV3 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-311SPP-CV3 is InGaAs pin photodiode module with Si preamplifier, designed for use in high-speed, long haul optical communication systems.

photodiode preamplifier AGC

Abstract: InGaAs FU-311SPP-CV4 Si pin photodiode module preamplifier AGC IR
Contextual Info: TZ7-99-408 2/4 MITSUBISHI (OPTICAL DEVICES) FU-311SPP-CV4 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-311SPP-CV4 is InGaAs pin photodiode module with Si preamplifier, designed for use in high-speed, long haul optical communication systems.

ic212

Abstract: TDS7404B LDM639 818-st UV diode 320 nm IC2-15 beam splitter 405 and 635 nm UV diode 100 nm to 280 nm 818-UV 760nm
Contextual Info: iC212 HIGHSPEED PHOTORECEIVER ar y n i im prel Rev A2, Page 1/15 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Fast pulse and transient measurement ♦ Optical triggering ♦ Optical front-end for oscilloscopes Bandwidth DC to 1.4 GHz Si PIN photodiode, Ø 0.4 mm active area diameter

Contextual Info: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes

Hamamatsu S1087 light

Contextual Info: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes

C9052-02

Abstract: C9052-01 A9053-01 C9052 C9052-03 C9052-04 S2386 S5821 photodiodes frequency counter Circuit
Contextual Info: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes

Contextual Info: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products

Contextual Info: Silicon APD Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339794-VAR Description CMC Electronics’ 264-339794 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback

Sensors PSD

Contextual Info: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches

H4083

Abstract: charge amplifier S3590 918* replacement GAMMA Radiation Detector SE-171 Si pin photodiode module
Contextual Info: MODULE Charge amplifier H4083 For radiation and high energy particle detection H4083 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used

charge amplifier

Abstract: S3590 918* replacement H4083 SE-171 Si pin photodiode module Si photodiode, united detector
Contextual Info: MODULE Charge amplifier H4083 For radiation and high energy particle detection H4083 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

Light Detector laser

Abstract: short distance measurement ir infrared diode
Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that