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    SILICON POINT CONTACT DIODE Search Results

    SILICON POINT CONTACT DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-2R2M=P2
    		Murata Manufacturing Co Ltd Fixed IND 2.2uH 1400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN85NJ0HD
    		Murata Manufacturing Co Ltd Fixed IND 85nH 1400mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR65J0HD
    		Murata Manufacturing Co Ltd Fixed IND 650nH 430mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE32CAHR47MR0L
    		Murata Manufacturing Co Ltd Fixed IND 0.47uH 8700mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CN33NJ0HD
    		Murata Manufacturing Co Ltd Fixed IND 33nH 1700mA POWRTRN Visit Murata Manufacturing Co Ltd

    SILICON POINT CONTACT DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "Point Contact Diodes"

    Abstract: 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778
    Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal


    Original     		CS100 CS101 1N830 1N830A 1N32A 1N833 "Point Contact Diodes" 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778 PDF

    1N831

    Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
    Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and


    Original     		1N831 1N831A 1N831B 1N831C 1N832 1N832A 1N832B 1N832C 1N831 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes PDF

    1N830A

    Abstract: "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833
    Contextual Info: Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal


    Original     		CS100 CS101 1N830 1N830A 1N32A 1N833 1N830A "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833 PDF

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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    a5090d

    Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
    Contextual Info: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    LN358

    Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
    Contextual Info: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    1N358R

    Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
    Contextual Info: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .


    OCR Scan     		1N358 1N1611 1N83X, DDA4072, DDA6797 1N358R 1N830A 1N1611AR 1N3582 dda5093 P-009 1N830 Silicon Point Contact Diode PDF

    1N2102

    Abstract: DO-22 1N1611A 1N311 1n3143 DO-37 1N830A 1N2926 1n76a 1N76
    Contextual Info: }{È \\ SILICON POINT CONTACT DETECTOR DIODES ASI Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resistance, broadband operation and high tangential signal sensitivity. These detector diodes are


    OCR Scan     		DO-22, DO-23, DO-37 1N830 1N830A 1N2102 1N32A 1N76A 1N833 1N833A DO-22 1N1611A 1N311 1n3143 1N2926 1N76 PDF

    1N21

    Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
    Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type


    OCR Scan     		1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26 PDF

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR PDF

    detector diode

    Abstract: "Point Contact Detector" DDA5093 point contact
    Contextual Info: DDA5093 SILICON POINT CONTACT DETECTOR DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI DDA5093 is a point contact detector diode designed for applications up to 60 GHz. MAXIMUM RATINGS O PDISS 100 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C O O O O


    Original     		DDA5093 DDA5093 detector diode "Point Contact Detector" point contact PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR PDF

    1N1611AR

    Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
    Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed


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    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    IN830A

    Abstract: Microwave detector diodes Silicon Detector tangential UHF DETECTOR S359 IN830
    Contextual Info: MICROW AVE DIODE CORPORATION SILICON UHF DETECTOR DIODE 00 » . - {nOT't*The IN 830 and IN 8 3 0 A are point contact barrier diodes used in signal detection. While Tangential ' Sensitivity is not specified in this instance, the diodes posess a minimum of -40 dbm up to 3 G H Z .


    OCR Scan     		IN830 IN830A Microwave detector diodes Silicon Detector tangential UHF DETECTOR S359 PDF

    CV2154

    Abstract: CV2155 microwave mixer diode mixer diode CV215 noise diode Microwave PIN diode
    Contextual Info: SIM2 SIM5 S IL IC O N M IC R O W A V E M IX E R D IO D E Silicon point-contact coaxial diodes, commercial equivalents of CV2154 and CV2155 respectively. They are intended as mixers at frequencies up to 12Gc/s. The two types have identical dimensions and characteristics but


    OCR Scan     		CV2154 CV2155 12Gc/s. SO-26 500Mc/s 10Mc/s 9375Mc/s microwave mixer diode mixer diode CV215 noise diode Microwave PIN diode PDF

    DO-23

    Abstract: Silicon Detector MA41202C "Point Contact Mixer"
    Contextual Info: MA41202C SILICON DETECTOR DIODE PACKAGE STYLE DO-23 DESCRIPTION: The MA41202C is a High Burnout Point Contact Mixer Diode. MAXIMUM RATINGS I 20 mA V 1.0 V PDISS 10 ERGS @ TC = 25 C TJ -55 C to +150 C TSTG -55 C to +150 C O O O O O NONE CHARACTERISTICS O TC = 25 C


    Original     		MA41202C DO-23 MA41202C DO-23 Silicon Detector "Point Contact Mixer" PDF

    Silicon Point Contact Mixer Diodes

    Abstract: Mixer Silicon Detector
    Contextual Info: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .


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    BAR66

    Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
    Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode


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    AN-065

    Abstract: BAT64 spice model sot-323 small signal schottky diode BAT64-04 BAT64-04W infineon schottky diode bat64 AN065 schottky diode cross reference say sot 23 DIODE 0.7v
    Contextual Info: Applications Note No. 065 Silicon Discretes Schottky Diodes for Clipping, Clamping and Transient Suppression Applications • Ultra-low series resistance for higher current handling • Low Capacitance • Fast Switching picosecond Series-Pair Configuration


    Original     		OT-23 OT-323 OT-23 OT-343 OT-23, OT-323, OT-343 SCD-80 AN-065 BAT64 spice model sot-323 small signal schottky diode BAT64-04 BAT64-04W infineon schottky diode bat64 AN065 schottky diode cross reference say sot 23 DIODE 0.7v PDF

    Silicon Point Contact Diode

    Contextual Info: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard


    OCR Scan     		375GHz DC1596) OC1301) -10dB -20dB 35GHz 150pA. Silicon Point Contact Diode PDF

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Contextual Info: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    1N53C

    Abstract: 1N78 1N53A 1N53D cs103 1N53 1N53B 1N78A 1N78B CS102
    Contextual Info: Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low


    Original     		CS102 1N78A 1N78B 1N53C 1N78 1N53A 1N53D cs103 1N53 1N53B 1N78A 1N78B CS102 PDF

    CS103

    Abstract: 1n53d diode 1N78A 1N78D 1N53B ka-band mixer 1N78B "Point Contact Diodes" CS102 Silicon Point Contact Mixer Diodes
    Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low


    Original     		CS102 1N78A 1N78B CS103 1n53d diode 1N78A 1N78D 1N53B ka-band mixer 1N78B "Point Contact Diodes" CS102 Silicon Point Contact Mixer Diodes PDF