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    SMALL SIGNAL TRANSISTORS TO-18 CASE Search Results

    SMALL SIGNAL TRANSISTORS TO-18 CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    SMALL SIGNAL TRANSISTORS TO-18 CASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222A metal package

    Abstract: 2N2221A-2N2222A of 2N2222A
    Text: Small Signal General Purpose Transistors NPN 2N2221A/2N2222A Small Signal General Purpose Transistors (NPN) Features • Switching and Linear Application DC and VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case:


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    PDF 2N2221A/2N2222A MIL-STD-202, 2N2221A 2N2222A 2N2222A metal package 2N2221A-2N2222A of 2N2222A

    2N3700

    Abstract: No abstract text available
    Text: NPN 2N3700 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are intended for small signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS


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    PDF 2N3700 2N3700 Juncti00

    2N4035

    Abstract: No abstract text available
    Text: 2N4035 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4035 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, primarily intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


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    PDF 2N4035 2N4035

    2n2712 data sheet

    Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0


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    PDF 2N2712 2N2714 2N2923 2N2924 2N2925 2N4289 2N4400 2n2712 data sheet 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923

    2n2907a

    Abstract: 2N2907A st st 2n2907a ST BEX 2n2905a st
    Text: 2N2905A 2N2907A  SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2907A 2N2905A) 2N2907A) 2N2907A st st 2n2907a ST BEX 2n2905a st

    2N2905A

    Abstract: 2N2907A 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st
    Text: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2905A 2N2907A 2N2905A) 2N2907A) 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st

    2N2905A

    Abstract: 2N2907A 2N2907A diagram 2N2907A TO-18 J 2N2907A
    Text: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2905A 2N2907A 2N2905A) 2N2907A) 2N2905A/2N2907A 2N2907A diagram 2N2907A TO-18 J 2N2907A

    Untitled

    Abstract: No abstract text available
    Text: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2905A 2N2907A 2N2905A) 2N2907A)

    Transistor 2N2222A

    Abstract: 2N2222A 2N2* Central J 2N2222A 2N2221A
    Text: DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: TA=25°C


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    PDF 2N2221A 2N2222A 2N2221A, 2N2222A 2N2221 x10-4 Transistor 2N2222A 2N2* Central J 2N2222A 2N2221A

    2N4058

    Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


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    PDF 2N2712 2N2714 2N2923 2N2924 2N4264 2N4287 2N4289 2N4400 2N4058 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


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    PDF

    BSS74

    Abstract: jc-70 BSS75 BSS76
    Text: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.


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    PDF BSS74 BSS75 BSS76 BSS74 jc-70 BSS75 BSS76

    2N3251A

    Abstract: 2N3251 2N3250 2N3250A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS


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    PDF ISO/TS16949 2N3250, 2N3251 2N3250A 2N3251A 2N3250 2N3251 C-120 2N3250 2N3251A 2N3250A

    2n3251

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS


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    PDF 2N3250, 2N3251 2N3250A 2N3251A 2N3250 2N3251 C-120 2N3250 311003D

    2n915

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION 2N703 BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN MAX *ICES *ICEV NPN AMPL/SWITCH 25 25 5.0 - 2N706C NPN SAT SWITCH 40 2N708 NPN SAT SWITCH 2N709A NPN SAT SWITCH 2N717 2N718A VCB (V) hFE


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N916 2N929A 2N930B 2N947 2n915

    2N4035

    Abstract: 2n4209 datasheet 2N3576 2N3672 2N3700 2N3701 2N3798A 2N3799A 2N3829 2N3946
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX *ICES *ICEV hFE @ IC (mA) MIN MAX @VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) NF ton (ns) toff (ns) MAX


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    PDF 2N3576 2N3672 2N3700 2N4415A 2N4962 2N4963 2N5056 2N5057 2N4035 2n4209 datasheet 2N3576 2N3672 2N3700 2N3701 2N3798A 2N3799A 2N3829 2N3946

    switch NPN

    Abstract: 2n3242a 2N3241A
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO (V) (V) BVEBO ICBO @ (V) (mA) MIN MIN MIN MAX *ICES *ICEV VCB (V) hFE @ IC (mA) MIN MAX @ VCE (V) VCE(SAT) @ IC (V) (mA) MAX Cob fT (pF) (MHz) (dB) NF ton (ns) toff (ns) MAX


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    PDF 2N2896 2N2897 2N2906 2N2907 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 switch NPN 2n3242a 2N3241A

    2N930

    Abstract: 2N3548 4500B
    Text: 2N930 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-18 TIE 2N930 NPN AND 2N3548 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND DIRECT COUPLED CIRCUITS. Ä CBE ABSOLUTE MAXIMUM RATINGS


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    PDF 2N930 2N3548 2N930 2N3548 100mA 300mV 200OC 2F930 4500B

    Untitled

    Abstract: No abstract text available
    Text: 2N930 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Ji CASE TO-18 TIE 2N930 NPN AND 2N3548 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND DIRECT COUPLED CIRCUITS. Ä CBE ABSOLUTE MAXIMUM RATINGS


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    PDF 2N930 2N3548 2N930 2N3548 100mA 300mV 400mW

    2N6432

    Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE


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    PDF 2N5183 2N6430 2N6431 2N6432 2N6433 BC110 BSX49 bsx79 BSY18 bsy62 BC393 BC394 BC477 BCX22

    2N5548

    Abstract: 2N930 TAA170 2000C 2N3548 2N950 2N354B
    Text: 2N930 > 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS *- . • * :« ;- ïv - • .V 'i-w H § • n- ; -y\ ¿ “¡V •iKv*rlr CASE TO-18 NPN AND 2N3548 (FNP) ARE SILIC' TAXIAL TRANSISTORS FOR USE IN AF AL AMPLIFIERS AND DIRECT COUPLED


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    PDF 2N930 2N3548 2N930 2N3548 100mA 300mV 100mA 400mW 2N5548 TAA170 2000C 2N950 2N354B

    2N2906

    Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
    Text: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose


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    PDF 5b07013 2N2906 2N2907 SO-132A C7/B11 500mA, 600mA 150mA 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors Page TO-18 Metal Case 66 TO-39 Metal Case 71 TO-46 Metal Case 80 TO-72 Metal Case 81 TO-71 Dual, Metal Case 81 TO-78 Dual, Metal Case 82 TO-92 Plastic Case 84 TO-92HS Plastic Case with Heat Sink 90 TO-116 Quad, Plastic Case 65 91


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    PDF O-92HS O-116

    to-92hs

    Abstract: No abstract text available
    Text: small signal Transistors Page TO-18 Metal Case 66 TO-39 Metal Case 71 TO-46 Metal Case 80 TO-72 Metal Case 81 TO-71 Dual, Metal Case 81 TO-78 Dual, Metal Case 82 TO-92 Plastic Case 84 TO-92HS Plastic Case with Heat Sink 90 TO-116 Quad, Plastic Case 65 91


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    PDF O-92HS O-116 to-92hs