SS 297 TRANSISTOR Search Results

ss 297 transistor

Abstract: Q67000-S118 Q67000-S292
Contextual Info: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118

ss 297 transistor

Abstract: Q67000-S118 Q67000-S292
Contextual Info: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118

ss 297 transistor

Abstract: Q62702-S616 sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92
Contextual Info: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type ¡D 0.48 A BSS 297 VDS 200 V Type BSS 297 BSS 297 BSS 297 Ordering Code Q62702-S616 Q67000-S118 Q67000-S292 ^DS(on)

bss 97 transistor

Abstract: ss 297 transistor
Contextual Info: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package

Contextual Info: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information

Contextual Info: BSS 297 In fin e o n technologie* SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 * ^ G S th VPT05548 = 0.8.2.0V Pin 1 Pin 2 G Type Vbs BSS 297 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 0.48 A

buz25

Contextual Info: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage

Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6

2SC373

Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
Contextual Info: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s

MICROWAVE ASSOCIATES

Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
Contextual Info: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to

2sk1531

Abstract: transistor 2SK1531
Contextual Info: TO SHIBA 2SK1531 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS 111.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance " r ds (ON)

BUK453-60A

Abstract: BUK453-60B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

GEN 50

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

HT121WX2-210

Abstract: tablet display 10.1 WXGA FI-JT40S-HF10 THC63LVDM83A LCD 4 X 20 FI-JH40S-HF10 lcd monitor led stripe 40 pin led screen LVDS SMD Code WY
Contextual Info: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST TITLE : HT121WX2-210 y Product Specification p Preliminary for Customer

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec

BUK455

Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: CS-298 2A Dual H-Bridge Driver D escription Features The emitters of the lower transistors of each bridge are connected together and the corresponding pins SENSE A/SENSE B can be connected to a sense resistor which, when used with an appropriate external circuit, can detect load faults or

TV RADIO IC siemens

Abstract: PSB8593
Contextual Info: S IE M E N S Dual-Tone Multi-Frequency Generator DTMF PSB 8593 CMOS 1C Type Ordering Code Package PSB 8593 Q 67100-H 8168 P-DIP-20 The DTMF generator PSB 8593 is specially designed to implement a dual-tone telephone dialing system. The device can be connected directly to a standard pushbutton keyboard

ir5040

Abstract: 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 2SA1257 103 7707 transistor s 2065 af
Contextual Info: SA NY O S E M I C O N D U C T O R CORP SSE D 7 cic]7D7b 0 D 0 7 Q 4 S T 2SA1257, 2SC3143 T -2 7-09 PN P/N PN Epitaxial Planar Silicon Transistors 2 0 1 8A High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 1057B F e a tu re s • V ery sm all-sized package p erm ittin g the 2SA1257/2SC3143-applied sets to be m ade sm all and slim