BUZ25 Search Results

buz25

Contextual Info: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ25

Contextual Info: rZ J S G S -T H O M S O N ^ 7 # . llDtêMiILKgïïMDÊi BUZ25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ25 100 V ^D S on 0.1 fi 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦

Contextual Info: • 7^2^237 002^74 7 ■ " T " -3 ° l-\\ SGS-THOMSON 5 1 , BUZ25 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G 3QE S-THOMSON TYPE V DSS ^ D S o n BUZ25 100 V 0.1 Î2 » Id 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE

BUZ25

Abstract: IEC134 TO3 philips t03 package transistor pin dimensions HC-293
Contextual Info: PowerMOS transistor BUZ25 GfciE D N AMER PHILIP S/DISCRET E ^53^31 OOmbDS S • July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

Z25 transistor

Contextual Info: G L SGS-THOMSON m B U Z25 ir a « » N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ25 Voss 100 V ^DS on 0.1 Q Id 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ • ULTRA FAST SWITCHING

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

a1011

Abstract: 3A21N BUZ25 C67078-A1011-A2 V103 T2030
Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS AK TI EN GES ELL SCH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description C ase Type

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

SGSP321

Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
Contextual Info: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*

transistor buz 36

Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ISOWATT220

Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Contextual Info: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00

sgs*P381

Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50

SIL02456

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 255 • N channel • Enhancement mode • Avalanche-rated Type VDs ¡D ^DS on Package 11 Ordering Code BUZ 255 250 V 13.0 A 0.24 Q TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 31 "C

bow94c

Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18