SS-MINI 3 Search Results

MA8000

Abstract: MAZS200 MA8000 Series
Contextual Info: Ultra Small Package SS Mini 2-pin ZenerDiode Series MAZS Series • Features ■ Package Outlines 1) 2) 3) 4) Ultra Small Package – SS Mini (2-pins) 1608 – Type Package Power dissipation: Ptot=150mW Vz series: 2.4 V to 39 V (Rank classification is available)

2SB1615

Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538
Contextual Info: 118 • Package No. b^32fiS2 Applica­ tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

3sk287

Abstract: 3SK139 3sk247 3SK285
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SC5021

Abstract: 2SA1888 D49 transistor TS 12164 2sc4973 2sc2188 2SC4969 panasonic silicon can tuner 2SA1738 2SA1739
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

Contextual Info: A orms M L latf E is P ss a Ch Mini ATR, 3-Slot OpenVPX Platform Rugged, Small Form Factor Description The modular design of this Mini ATR platform allows for various configurations. The chassis can easily be scaled up or down while using the same side walls.

MINI3PIN

Abstract: MA4ZD14
Contextual Info: New Low V F Schottky Barrier Diode Series • Overview This series of low Schottky barrier diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type

2SC5363

Abstract: transistor frequency 1.5GHz gain 20 dB
Contextual Info: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment

3sk272

Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Contextual Info: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)

Contextual Info: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package allowing downsizing of the equipment and

MAZN120

Abstract: p487 MAZN033 IFR 510 MAZN110 marking azn
Contextual Info: Panasonic Z e n e r D iodes MAZN000 Series Silicon planer type Surge absorption circuit • Features • SS-Mini type package 2-pin • No rank classification (Vz= 3.3 to 12V) Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Rating Unit mA Average forward current

C1974

Abstract: ADG417 ADG417BN ADG417BR DG417 C1974A
Contextual Info: a LC2MOS Precision Mini-DIP Analog Switch ADG417 FEATURES 44 V Supply Maximum Ratings V SS to VDD Analog Signal Range Low On Resistance <35 ⍀ Ultralow Power Dissipation (<35 ␮W) Fast Switching Times tON (160 ns max) tOFF (100 ns max) Break-Before-Make Switching Action

Contextual Info: LC2MOS Precision Mini-DIP Analog Switch ADG417 a FEATURES 44 V Supply Maximum Ratings V SS to VDD Analog Signal Range Low On Resistance <35 ⍀ Ultralow Power Dissipation (<35 ␮W) Fast Switching Times tON (160 ns max) tOFF (100 ns max) Break-Before-Make Switching Action

SSMini

Abstract: MA2S374
Contextual Info: Variable Capacitance Diodes MA2S374 Silicon epitaxial planar type Unit : mm For CATV tuner 0.15 min. 0.27 − 0.02 + 0.05 • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package

Contextual Info: ANALOG DEVICES LC2M0S Precision Mini-DIP Analog Switch ADG419 FEATURES 44 V Supply M axim um Ratings V ss to V DD Analog Signal Range Low On Resistance < 35 Q U ltralow Power Dissipation (< 35 |iW ) Fast Transition Tim e (145 ns max) Break-Before-Make Switching Action

Contextual Info: ANALOG DEVICES LC2M0S Precision Mini-DIP Analog Switch ADG417 FEATURES 44 V Supply Maximum Ratings V ss to V DD Analog Signal Range Low On Resistance <35 fl Ultralow Power Dissipation (<35 p.W) Fast Switching Times tow (145 ns max) t0FF (100 ns max) Break-Before-Make Switching Action

MAZS0750H

Abstract: MAZS000 MAZS024 MAZS027 MAZS082 MAZS0820H MAZS0820L MAZS0820M MAZS2000L MAZS200
Contextual Info: Zener Diodes MAZS000 Series Silicon planar type Unit: mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 • SS-Mini type 2-pin package SSMini2-F1 • Low noise type • VZ rank classified (VZ = 2.4 V to 39 V) 0.01±0.01 1.60±0.05 1.20+0.05 –0.03

Contextual Info: Panasonic Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency am plification U nit: mm • Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment

Contextual Info: Panasonic Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency am plification • U nit: mm 0.4 Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment

Contextual Info: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High speed switching • Low collector-emitter saturation voltage VCE sat • SS-Mini type package allowing downsizing of the equipment and

MA132A

Abstract: MA3S132A
Contextual Info: Switching Diodes MA3S132A MA132A Silicon epitaxial planar type Unit : mm 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features 1 + 0.05 • Short reverse recovery time trr • Small terminal capacitance, Ct • Super-small SS-mini type package, allowing high-density mounting