2N5551
Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 OF 2n5550 2N5551 TO92 transistor 2n5550 2N5400 2N5401 hz15
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
2N5551
transistor equivalent 2n5551
st 2n5551
OF 2n5550
2N5551 TO92
transistor 2n5550
hz15
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2N5551
Abstract: 2N5550 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
15kHZ
2N5551
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2N5401
Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
transistor 2N5401
st2n5401
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2N5401
Abstract: 2N5400 st 2n5401 diode 2N5401 st2n5401 transistor 2n5401 2N5550 2N5551
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
st 2n5401
diode 2N5401
st2n5401
transistor 2n5401
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2N5401
Abstract: st2n5401 diode 2N5401 transistor 2N5401 2N5400 2N5550 2N5551
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
st2n5401
diode 2N5401
transistor 2N5401
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2N5551
Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 st2n5551 transistor 2n5550 2n5551 datasheet equivalent 2n5551 transistor 2n5551 2N5400
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
2N5551
transistor equivalent 2n5551
st 2n5551
st2n5551
transistor 2n5550
2n5551 datasheet
equivalent 2n5551
transistor 2n5551
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2N5551
Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
100MHz
2N5551
2N555
ic CD4081 pin diagram datasheet
st 2n5551
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2n5551
Abstract: 2N5550 transistor equivalent 2n5551 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and ST 2N5401 are recommended. ST On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
100MHz
2n5551
transistor equivalent 2n5551
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2N5401
Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
transistor 2N5401
st2n5401
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Untitled
Abstract: No abstract text available
Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
15kHZ
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C2N5550
Abstract: No abstract text available
Text: 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
Emitte50
15kHZ
C2N5550
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2N5401
Abstract: No abstract text available
Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
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st smd diode marking code
Abstract: smd diode order marking code stmicroelectronics 2N5401HR NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR st marking code TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR R SOC5401 175-LM
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 Operating temperature range -65°C to +200°C 2 3 1 2 3 TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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2N5401HR
2N5401HR
st smd diode marking code
smd diode order marking code stmicroelectronics
NV SMD TRANSISTOR
ST MAKE SMD TRANSISTOR
st marking code
TRANSISTOR SMD MARKING CODES
MARKING SMD PNP TRANSISTOR R
SOC5401
175-LM
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JANSR2N5401UB
Abstract: 2N5401UB06 J2N5401UB1
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
JANSR2N5401UB
2N5401UB06
J2N5401UB1
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2N5401HR
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics
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2N5401HR
2N5401HR
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2n5401 smd
Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■
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2N5401HR
2N5401HR
2n5401 smd
2n5401ub
SOC5401
SOC5401SW
2N5401UB1
TRANSISTOR SMD CODES
SOC5401HRB
escc
2n5401 transistor
TRANSISTOR SMD MARKING CODES
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2N5401UB06
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics
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2N5401HR
2N5401HR
2N5401UB06
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Untitled
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
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2N5401S SOT-23
Abstract: zE sot23 SOT-23 Mark ZE MARKING ZE SOT-23 2N5401S
Text: SEMICONDUCTOR 2N5401S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZE 1 2 Item Marking Description Device Mark ZE 2N5401S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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2N5401S
OT-23
2N5401S SOT-23
zE sot23
SOT-23 Mark ZE
MARKING ZE SOT-23
2N5401S
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2N5401
Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA
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M3D186
2N5401
2N5551.
MAM280
SCA63
115002/00/03/pp8
2N5401
transistor 2N5401
diodes inc 2N5551
2N5551
BP317
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2N5401
Abstract: transistor 2N5401 2N5551 diodes inc diodes inc 2N5551 2N5400 2N5550 2N5551 2n5401 transistor of pnp transistor 2n5401 2N5401 TO-39
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistors
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M3D186
2N5400;
2N5401
2N5550
2N5551.
MAM280
SCA54
117047/00/02/pp8
2N5401
transistor 2N5401
2N5551 diodes inc
diodes inc 2N5551
2N5400
2N5551
2n5401 transistor
of pnp transistor 2n5401
2N5401 TO-39
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5401 transistor
Abstract: 2n5401TRANSISTOR 2N 5401
Text: MC C TO-92 Plastic-Encapsulate Transistors X 1 2N 5401 TRANSISTOR PNP FEATURES P cm; Ic m ; 0.625W (Tamb=25°C) -0.6 A tage V(BR)CB0: -1 6 0 V storage junction temperature range Tj.Tstg: ELECTRICAL -55°C to + 150°C C »4A R AC T E R I ST I C S (Tam b=25°C u n le s s o th e rw is e
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2N5401
5401 transistor
2n5401TRANSISTOR
2N 5401
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2N5401S
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V CEo=-150V •3 MAXIMUM RATINGS Ta=25°C RATING UNIT Collector-Base Voltage
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2N5401S
-160V,
-150V
-50mA,
-10j/A,
-10mA
-50mA
-10mA,
2N5401S
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Untitled
Abstract: No abstract text available
Text: SiMICQNDUCTOR 2N5400 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted
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2N5400
2N5401
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