2N5551
Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 OF 2n5550 2N5551 TO92 transistor 2n5550 2N5400 2N5401 hz15
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
2N5551
transistor equivalent 2n5551
st 2n5551
OF 2n5550
2N5551 TO92
transistor 2n5550
hz15
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2N5551
Abstract: 2N5550 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
15kHZ
2N5551
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2N5401
Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
transistor 2N5401
st2n5401
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2N5401
Abstract: 2N5400 st 2n5401 diode 2N5401 st2n5401 transistor 2n5401 2N5550 2N5551
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
st 2n5401
diode 2N5401
st2n5401
transistor 2n5401
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2N5401
Abstract: st2n5401 diode 2N5401 transistor 2N5401 2N5400 2N5550 2N5551
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
st2n5401
diode 2N5401
transistor 2N5401
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2N5551
Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 st2n5551 transistor 2n5550 2n5551 datasheet equivalent 2n5551 transistor 2n5551 2N5400
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
2N5551
transistor equivalent 2n5551
st 2n5551
st2n5551
transistor 2n5550
2n5551 datasheet
equivalent 2n5551
transistor 2n5551
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2N5551
Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
100MHz
2N5551
2N555
ic CD4081 pin diagram datasheet
st 2n5551
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2n5551
Abstract: 2N5550 transistor equivalent 2n5551 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and ST 2N5401 are recommended. ST On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
100MHz
2n5551
transistor equivalent 2n5551
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2N5401
Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
transistor 2N5401
st2n5401
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Untitled
Abstract: No abstract text available
Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
15kHZ
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C2N5550
Abstract: No abstract text available
Text: 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5550
2N5551
2N5400
2N5401
2N5550
Emitte50
15kHZ
C2N5550
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2N5401
Abstract: No abstract text available
Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.
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2N5400
2N5401
2N5550
2N5551
2N5400
2N5401
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st smd diode marking code
Abstract: 2N5551HR marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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2N5551HR
2N5551HR
st smd diode marking code
marking code my SMD Transistor npn
smd diode order marking code stmicroelectronics
ST MAKE SMD TRANSISTOR
2N5551
marking code br 39 SMD
NV SMD TRANSISTOR
TRANSISTOR SMD MARKING CODES
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Untitled
Abstract: No abstract text available
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■
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2N5551HR
2N5551HR
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2n5551 smd
Abstract: 2N5551HR
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■
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2N5551HR
2N5551HR
2n5551 smd
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2N5551UB
Abstract: package LCC-3
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
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2N5551HR
2N5551HR
2N5551UB
package LCC-3
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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RAD SMD MARKING CODE
Abstract: 2N5551RUB
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
RAD SMD MARKING CODE
2N5551RUB
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diodes inc 2N5551
Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING
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M3D186
2N5550;
2N5551
2N5400
2N5401.
MAM279
SCA63
115002/00/03/pp8
diodes inc 2N5551
2N555
2N5551
hz 9102
2N5401
2N5550
BP317
C2N5550
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transistor equivalent 2n5551
Abstract: diodes inc 2N5551 2N5551 2N5551 diodes inc transistor 2n5550 2N5551 circuit PO 903 str 6707 datasheet 2N5400 2N5401
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors
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M3D186
2N5550;
2N5551
2N5400
2N5401.
MAM27.
SCA54
117047/00/02/pp8
transistor equivalent 2n5551
diodes inc 2N5551
2N5551
2N5551 diodes inc
transistor 2n5550
2N5551 circuit
PO 903
str 6707 datasheet
2N5401
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marking code ff SMD Transistor
Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Text: CENTRAL SE MI C ON D UC T O R ÜË dI~ § M a n ta 00G0430 3 f r-z 7 -2 ? ~ @§nijg§£3S Cestirai liüiie@ndugf@? gsrp. ♦I Central semiconductor Corp. Ï S tfii s@rusüG mö©g @? @@pp. SURFACE MOUNTED DEVICES TRANS I St OÄ: SOT- 23, SOT-89 145 Adams Avenue
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DDQD43D
OT-23,
OT-89
OT-23
CMPT918
2N918
CMPT2222A
CXT390A
CXT3904
2N3904
marking code ff SMD Transistor
SMD MARKING CODE C2U
SMD MARKING CODE C1G
C2U SOT-89
transistor smd 2N4403
c1g smd
2N3904 TRANSISTOR SMD
SOT23 transistor 2N2222A
RF transistor marking IN SOT-89
2N3640
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2n5551
Abstract: 2N5550 st 2n5551
Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it C oilector-E m itter Voltage VCEO 140 160 Vdc Collector-Base Voltage v CBO 160 180 Vdc Emitter-Base Voltage R ating v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'c 600 m Adc Total Device D issipation
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2N5550
2N5551*
2N5551
O-226AA)
2N5550,
2N5551
st 2n5551
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2N5551C
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : ICBo=50nA Max. V Cb=120V • Low Saturation Voltage.
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2N5551C
100MHz
250//A
300//S,
2N5551C
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2N4410
Abstract: 2N5551
Text: S S E fv llG O fs lO L J C îT Q R 2N4410 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Màximum RStinQS
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2N4410
2N5551
2N4410
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