T17N Search Results

TELEFUNKEN* U 111 B

Abstract: T17N
Contextual Info: TELEFUNKEN ELECTRONIC flic T> m fl'ISGD'lfci 3 ODDbObS H A L G G Z Z Z S '-/ '? T17N Typenrelhe/Type range_ T17N_ 200* 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U m m , U r r m Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

T17N

Abstract: aeg t17n 25CC 180el
Contextual Info: T17Na E G CORP öl Typenreihe/Type ränge T17N 200 * 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 800 600 D E | ODa^MEb □ □□fc.DbS 7 J 900 1000 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: TELEFUNKEN EL E C T R O N I C T17N flic T> m fl'ISGD'lfci Typenrelhe/Type range_ T17N_ 200* 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U m m , U r r m Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

T2515

Abstract: T17N
Contextual Info: EUPEC SSE D 3M032T7 0000LS3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties H ochstzulässige W erte V d rm , V r r m 400 60 0 900 800 1000 1100 1200 M axim um perm issible values P eriodische V orw ärts- und

T17N

Abstract: kL11 KU11
Contextual Info: E ^ -A KT IE NG ES EL LS CH AF T T17N fllC D 0 0 5 1 4 1 5 O D O b O b S 0 • AEGG 200 Typen reih e/Type range T17N E le k trisch e E ig enscha ften E lectrica l properties H ö ch stz u lä ss ig e W erte M axim um p erm issib le va lu e s U drmi U rrm Periodische Vorwärts- und

Contextual Info: EUPEC SSE D 3M032T7 0 0 0 0 L S 3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties Hochstzulässige Werte 400 600 900 1000 1100 1200 Itr m sm Itavm Dauergrenzstrom RMS on-state current average on-state current

Contextual Info: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

WL 系列

Contextual Info: TOKEN TRWL 貼片開放式繞線超薄高電流電感 貼片繞線電感 超薄高電流電感 產品簡介 德鍵電子生產的繞線貼片電感 - 採用高 共振頻率的陶瓷體線繞結構，超小體積 電感，可提供較高的 Q 值超薄型，

MICRON gddr3

Abstract: GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810
Contextual Info: ADVANCE‡ 256Mb: x32 GDDR3 SDRAM GRAPHICS DDR3 SDRAM MT44H8M32 – 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • • • • • • • • • • • • • • • • •

T103 0830

Abstract: t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06
Contextual Info: Wire Wound Chip Inductor－WL Series Feature －Wire wound Ceramic Construction Provide High SRFs －Ultra-compact Inductors Provide Exceptional Q Values －Low profile , High Current are Available －Miniature SMD Chip Inductor for Fully Automated Assembly

DDR2 x32

Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.

T6N8

Contextual Info: WL Series Stackpole Electronics, Inc. Wirewound Ceramic Chip Inductor • • • • • • Features: Resistive Product Solutions WW on ceramic provides high SRFs Robust termination for outstanding mechanical strength Ultra compact inductors provide exceptional Q values

DDR2 x32

Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

136ball

Contextual Info: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4J52324Qc

Contextual Info: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

DDR RAM 512M

Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

t1n6

Abstract: T1N2 T3N6 AL02BT1N0 AL02BT1N6 AL02BT3N9 T2N2 400 500MHZ transceiver AL02BT5N6 AL03BT3N3
Contextual Info: Viking THIN FILM CHIP INDUCTOR－AL Viking’s 0603 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking design provides high SRF, excellent Q, and superior temperature stability. This highly stable inductor family is specification designed for critical tolerance

K4j52324qh-hj1a

Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
Contextual Info: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.

K4j52324qh-hj1a

Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
Contextual Info: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TH68N

Abstract: TL50N t1n6 TRWL05 t24n T56N TR36 Resistor 1R0 K T82N TRWL06
Contextual Info: TOKEN TRWL Chip Ceramic Inductors Wire-wound Ceramic Inductors Chip Open-Type Wire wound Ceramic Inductors - TRWL Series Token Wirewound Ceramic Inductor Simplifies Power Management Issues TRWL Series Preview The latest range of air core surface mount coils from Token is fully compliant with RoHS legislation and Token