TAA 861 CH Search Results

TFK 236

Abstract: TFK 4 232 TAA861A schaltungen 861 taa 861 tFK 229 236 TFK 36Tfk auo 002 TAA865A
Contextual Info: TAA 861 • TAA 861 A TAA 865 • TAA 865 A Monolithisch Integrierte Schaltungen Monolithic Integrated Circuits Anwendungen: O perationsverstärker in Regelungstechnik, NF-Schaltungen, Analog-Rechnertechnik, A u to e le ktro n ik usw. Applications: O perational am plifiers in autom atic co n tro l technique, audio circuits, analogue

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

B2761D

Abstract: B861 13001 s B4761D B861D SR 13001 TAA2761 TCA321 TCA311 TAA 2761 A
Contextual Info: FUNKAMATEUR-Bauelementeinformation B 61t . . . 4 7 6 5 D Bipolare Operationsverstärker Hersteller: VEB Halbleiterwerk Frankfurt O. TGL 38925 Kurzcharakteristik Grenzwerte1 P aram eter (B edingungen) Typ B etriebsspannung K u rzzeichen m in. m ax. —U cc2

information applikation

Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Contextual Info: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK

Contextual Info: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

Contextual Info: PDM4M4060 256K x 32 CMOS Static RAM Module Features n n n n n n n High-density 8 megabit Static RAM module Low profile 72-lead SIMM and Angled SIMM Single In-line Memory Module) Very fast access time: 10 ns (max.) Surface mounted plastic components on an epoxy

Contextual Info: OPM / V Dense-Pac Microsystems, Inc^ DPS512S8A3 512K X 8 BUFFERED/DECODED CMOS SRAM MODULE PRELIMINARY DESCRIPTION: The DPS512S8A3 "DENSE-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC along with memory interface logic and capacitors mounted

Y21T

Abstract: sony 877 fag 23 mg cxa1337 yic 3-pin
Contextual Info: CXA1338Q-Z/R S O N Y CCD Camera Matrix Description CXA1338Q-Z and CXA1338R are m atrix ICs fo r CCD cameras and are used fo r the system w ith com plem entary color checkers coding imager ICX026AK. They perform the vertical correlation process by using 1HDL and o u tp u ts the RGB signal

SY10L474-7

Abstract: SY10L474 sy100l474 10L474
Contextual Info: * SY10L474-5/7 SY100L474-5/7 SY101 L474-5/7 LOW-POWER 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAC: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

Contextual Info: f Z 7 SCS-THOMSON Ä 7# MK48C02A MK48C12A CMOS 2K X 8 ZEROPOWER SRAM • LOW CURRENT 1jiA @ 7 0 ’ C BATTERY INPUT FOR DATA RETENTION IN THE AB­ SENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC W R ITE P R O T E C T IO N DURING POW ER FAILURE ■ + 5 VOLT ONLY READ/WRITE

Contextual Info: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in S O J package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is

Contextual Info: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high

12090N

Contextual Info: rz z S C S -T H O M S O N M gi@iüiCTi(QM(gS MK48C02A MK48C12A CMOS 2K x 8 ZEROPOWER SRAM • LOW CURRENT (1 nA @ 7 0 ’ C BATTERY INPUT FOR DATA RETENTION IN THE AB­ SENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC W R ITE P R O T E C T IO N DURING POW ER

6301-1 prom

Contextual Info: Standard Performance Schottky Generic PROM Family 53/63xx-i Features/Benefits Description • Standard Schottky processing • Reliability proven nichrome fusible links qualified for MIL-M-38510 • Drop in compatible ROMs • PNP inputs for low input current

Contextual Info: CELESTICA 1M x 64 FPM BUFFERED DIMM FEATURES • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, G Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3V ± 0.3V power supply

Contextual Info: W24257AJ-8N ¡’inbond = 7 Electronics Corp. smt:7 32K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24257AJ-8N is a high speed, low power CMOS static RAM organized as 32768 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high

BA516

Abstract: 8DA10 .11da2 11DA2
Contextual Info: . . u v i m v j i u n n A i u n i H Y 5 1 V 1 7 4 1 O A 4 M x 4 bj C M 0 S S e r ie s D R A M w ith W P B PRELIMINARY DESCRIPTION The H Y51V1741 OAis the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V1741 OA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

42S4260

Abstract: upd 40pin
Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT juPD42S4260AL, 424260AL 3.3 V OPERATION 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The juPD42S4260AL, 424260AL are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

CAT28LV65

Contextual Info: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:

km48c2000

Contextual Info: KM48C2000A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM48C2000A/AL7ALL7ASL-5 50ns 13ns 90ns KM48C2000A/AL/ALLVASL-6 60ns 15ns 110ns KM48C2000A/AL/ALL/ASL-7 70ns

W24L257AJ-15

Contextual Info: W24L257A íinbond Electronics Corp. 32K X 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L257A is a high-speed, low-power CMOS static RAM organized as 32768 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high

Contextual Info: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is

Contextual Info: PRELIMINARY KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C10G0 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications