TAS70 Search Results

UC3861 application note

Contextual Info: 1 1 |application INFO available | UNITRODE UC1861-1868 UC2861-2868 UC3861-3868 Resonant-Mode Power Supply Controllers FEATURES DESCRIPTION • Controls Zero Current Switched ZCS or Zero Voltage Switched (ZVS) Quasi-Resonant Converters The UC1861-1868 family of ICs is optimized for the control of Zero Cur­

10ST10

Abstract: lq55
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

16C256

Abstract: KM416C256DJ
Contextual Info: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: *4 im f T U n t N LT1137A l TECHNOLOGY Advanced Low Power 5V RS232 Transceiver with Small Capacitors June, 1992 DCSCftlPTION F€ATUR€S • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ESD Protection over ±10kV Uses Small Capacitors 0.1 nF, 0.2^F

Contextual Info: u>p E Mob Advanced Linear Devices ALD4302A/ALD4302 QUAD CMOS COMPARATOR AND DRIVER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 4302 is a monolithic quad high performance voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of I0 12i2; low input bias

Contextual Info: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér

Contextual Info: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Contextual Info: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3B is a 2M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

Contextual Info: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

KM44C4000B

Contextual Info: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

MT43C8129A

Abstract: DRAM 256X8 8129A MT43C
Contextual Info: M T43C 8128A /9A 128K X 8 T R IP L E -P O R T DRAM M IC R O N I fMILOKUUCIOH. INI 128K X 8 DRAM WITH DUAL 256 X 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, d ata access ports Fast access times: 70ns random , 22ns serial

40-6F

Contextual Info: LTKOOl TECH N O LO G Y Therm ocouple C o ld Junction Com pensator and M atch ed Amplifier F€ATUR€S and extremely low input bias currents <600pA to allow • 0 .75 °C Initial Accuracy (A Version) ■ Extrem ely Lo w W arm up Drift offset voltage or drift.

DBL2044

Abstract: NEI 2044 Sat Tuner Application Note BW TV Tuner DS442
Contextual Info: -TUNER BAND SELECTOR FOR TV SETS V_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The DBL 2044 is an 1C for tuner band selection of electronic tuning type television set. This 1C is used

KM44V4100BS

Abstract: Oi24 A10QZ
Contextual Info: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM718V895 256Kx18 Synchronous SRAM 256Kx18-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined Operation With 4 Buret • On-Chip Address Counter. • Self-Timed Write Cyde. • On-Chip Address and Control Registers.

LTI025

Abstract: 1amj
Contextual Info: LTKOOl TECHNOLOGY Thermocouple Cold Junction Compensator and M atched Amplifier F€ATUR€S and extremely low input bias currents <600pA to allow • 0 .75 °C Initial Accuracy (A Version) ■ Extrem ely Lo w W arm up Drift offset voltage or drift. high impedance input filters to be used without degrading

NE5020N

Abstract: 1n4148 ITT NE5020 NE5020F DAC 8 bits 0-10v
Contextual Info: Philips Semiconductors Linear Products Product specification 10-B¡t fiP-compatible D/A converter DESCRIPTION NE5020 PIN CONFIGURATION The NE5020 is a microprocessor-compatible monolithic 10-bit digital-to-analog converter subsystem. This device offers 10-bit

Contextual Info: Ordering number:EN4794A CMOS LSI I N0.4794A LC3564S, SM, SS-70/85/10 64K 8192 words x 8 bits SRAM O ve rview The LC3564S, LC3564SM, and LC3564SS are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type SRAMS with a sixtransistor memory cell and feature high-speed