TBD 135 TRANSISTOR Search Results

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

transistor N14

Abstract: MOTOROLA TRANSISTOR TO-220 bt 135 motorola 113 TBD 135 Transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview SM A R TD ISCR ETES In tern ally Clam ped, N -Channel IG B T MGP20 N14 CL 20 A M P E R E S VOLTAGE C L A M P E D N -C H A N N E L IG BT VCE on = 1-9 VOLTS 135 VOLTS (C LA M PED ) T h is Logic Level Insulated Gate Bipolar Transistor (IG BT)

SPPX4N60S5

Abstract: TRANSISTOR SMD MARKING CODE ag DIODE smd marking Ag SPBX4N60S5 X4N60S5
Contextual Info: SPPX4N60S5 SPBX4N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code

BYT 56 diode

Abstract: smd transistor marking TQ smd diode JD BYt 32
Contextual Info: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on

NT 407 F TRANSISTOR TO 220

Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N14CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

ma2027

Abstract: PH1214-80M
Contextual Info: t,3E D 5L42E05 DQ0DÖM3 57T MAP MICROWAVE PULSED POW ER TRANSISTOR PH1214-8.0M PRELIMINARY REV. NC 05/05/92 n/A-con * M/A-COM PHI, INC. p h o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System

yb 0d

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

D3200

Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s

TO247AE

Abstract: to-247AE MOTOROLA TRANSISTOR 726 MGW40N60U ADC 0803
Contextual Info: MOTOROLA Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGW40N60U Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

BLF183XR

Contextual Info: BLF183XR; BLF183XRS Power LDMOS transistor Rev. 1 — 19 August 2014 Objective data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

MGP11N60DE

Abstract: 221A-06
Contextual Info: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C

Contextual Info: M O TO R O L A Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M G W 40N 60U Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MTDF1P02HD

Contextual Info: MOTOROLA Order this document by MTDF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTDF1P02HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

F3200Z

Abstract: 050gj TBD 135 Transistor
Contextual Info: MOTOROLA Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F 3200Z WaveFET Motorola Preferred Device Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 11.5 AMPERES

BLF184XR

Abstract: 001aan207 blf184xrs SOT1214B sot1214 BLF184
Contextual Info: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information

MMSF3300R2

Abstract: MMSF3300R2/D
Contextual Info: MOTOROLA Order this document by MMSF3300R2/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3300R2 WaveFET Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology

BLF188XR

Abstract: blf188 BLF188XR NXP BLF18
Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

BLF188XR NXP

Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

MMSF3305

Abstract: MMSF3305R2 S3305
Contextual Info: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device WaveFET devices are an advanced series of power MOSFETs

MGP5N60ED

Abstract: MGP5N60E Motorola 206 221A-06
Contextual Info: MOTOROLA Order this document by MGP5N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP5N60E Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate IGBT IN TO–220 5 A @ 90°C 6 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE

biss 0001

Abstract: PBLS2001D PBLS2003D PBLS2002D pbss4160dpn PBLS4003D PBLS4004Y SOT363 flash PBLS1503V PBLS4003V
Contextual Info: Single BISS transistors Double BISS transistors BISS loadswitches Low VCEsat BISS transistors selection guide Key features } Extensive range of BISS transistors } Low collector-emitter saturation voltage VCEsat , e.g. 235 mV @ 5.8 A } Up to 5.8 A collector current capability I C