TC538200A Search Results

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC538200AP/AF-8 M BIT 512K W O R D X 16 B IT / 1 M W ORD X 8 B IT C M O S M A S K R O M D E S C R IP T IO N T h e T C 5 3 8 2 0 0 A P /A F is a 8 ,3 8 8 ,6 0 8 b its re a d on ly m em ory o rg an ize d a s 5 2 4 ,2 8 8 w ords b y 16 b its

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits

A10AL

Abstract: TC538200AFT
Contextual Info: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.

TC538200AP

Abstract: TC538200AF TC538200 TC538200A
Contextual Info: TOSHIBA TC538200AP/AF SILICON STACKED GATE CMOS 524,288 WORD x 16 BIT/1,048,576 WORD x 8 BIT CMOS MASK ROM D escription The TC538200AP/AF or as 1,048,576 w ords by The TC538200AP/AF The TC538200AP/AF is a 8,388,608 bit read only m em ory organized as 524,288 w ords by 16 bits when BYTE is logical high,

TC538200AP

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K W O RD BY 16 BITS/1 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

TC5816FT

Abstract: TC5332410F TC5316200CP TC531621 TC5310
Contextual Info: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12