TIP14 Search Results

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

tip140

Abstract: darlington TIP142 power amplifier TIP141 TIP142 npn DARLINGTON 10A TIP-142 tip142 darlington NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP140/141/142 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP145/146/147 APPLICATIONS ·Designed for general–purpose amplifier and

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

pnp darlington to-220 10a

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T TIP147T NPN PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P NPv • C o m p le m e n t to TI P 1 4 5 /1 4 6 /1 4 7

Contextual Info: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

tip147

Abstract: TIP146 TIP145 tip147 transistor tip142 tip147 TIP140 TIP141 TIP142
Contextual Info: TIP145, TIP146, TIP147 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base PNP transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and switching application.

TIP142

Abstract: TIP141 TIP142 TIP147 TIP140 tip141 equivalent TIP-142 SOT93 TIP145 TIP146 TIP147
Contextual Info: TIP140, TIP141, TIP142 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and switching application.

TIP142

Abstract: TIP141 TIP147 TIP140 tip142/147 TIP145 TIP146 SGS-Thomson TIP147 morocco tip147 sgs-thomson
Contextual Info: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TIP142T Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- ., /"S, r -^ J • : h FE =1000(Min)@l c -5A A x • Collector-Emitter Sustaining Voltage-

Contextual Info: <-$£.tni-ConaiLekoi Lpioaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP147 Silicon PNP Darlington Power Transistor DESCRIPTION 1 • High DC Current Gain: h FE = 1000(Min)@lc=-5A

tip141 equivalent

Abstract: TIP140 TIP141 TIP142 TIP145T TIP146T TIP147T tip142 equivalent
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

TIP140

Abstract: TIP142 TIP146 TIP142 TIP147 TIP141 TIP145 TIP147 tip 147
Contextual Info: Datasheet H C o n tM l TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP tm SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers of World Class Discrete Semiconductors

147T

Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit

TIP147

Abstract: tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14
Contextual Info: TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142 Equivalent Circuit

TIP147

Abstract: TIP146 Tip147 PNP Darlington 100V 10A TIP145 transistor tip147 TRANSISTOR TIP145
Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN h FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p le m e n t to T I P I 4 0 / 1 4 1 / 1 4 2

tip 147 TRANSISTOR

Abstract: TIP147F TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN h FE = 1000 @ V c e = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Com plement to TIP140F/141 F/142F ABSOLUTE MAXIMUM RATINGS

TIP145F

Abstract: TIP146F TIP147F TIP140 TIP141 TIP142 tip142 equivalent
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

Contextual Info: TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A This model is currently available, but not

tip146

Contextual Info: TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP140, TIP141 and TIP142 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A This model is currently available, but not

TIP142T

Abstract: gto 5A NPN Transistor TO220 VCEO 60V IC 5a TIP140T TIP141T US Global Sat
Contextual Info: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T