TJM 10 Search Results

P1007LS12

Contextual Info: Fast Turn Off Thyristors - Capsule Type Type Part No. Old Part No. VDRM ITAV VRRM TK=55°C V A I2t 10ms ½ sine ITSM VR 60% VRRM A A2s tq @ 200V/µs Typ. Reverse Recovery Charge TJM, 50% Chord Qr @ITM @-di/dt VT0 rT TJM @TJM RthJK d.c. 180° sine µs µC A

p0273sc

Abstract: P202PH12 P0128SJ12E
Contextual Info: Fast Turn Off Thyristors - Stud Types Type VDRM ITAV VRRM TC=55°C I2t 10ms ½ sine ITSM VR 60% VRRM tq Typ. Reverse Recovery Charge @ TJM, 50% Chord 200V/µs Qr 2 @ ITM @-di/dt VT0 rT TJM RthJC @ TJM 180° sine Fig. No. Westcode "P" series of fast switching thyristors have regenrative gate structure to ensure low switching losses and high di/dt perofrmance. "P" Series devices are particularly attractive to; Inverter, DC chopper drives, UPS and Pulse

MBR5200

Abstract: MBR30200 MBR30200PT TO-247ad MBR5100 MBR540 2x160 MBR1040CT mbr560 MBR5150
Contextual Info: Schottky Barrier Diodes High Tjm Low IRRM Schottky Barrier Diodes Tj=-65°C~+175°C, Tjm=+175°C Òype VR=V V RRM Electrical Characteristics IR @ VR=VRRM IFAV IFSM 25°C 125°C A m A mA VFmax @ IFM V A Package Style MBR540 40 5,0 175 0,50 33 0,55 5 TO-220AC

40N60A

Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Contextual Info: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A

N195PH16

Abstract: N170PH12 N086PH12 N105PH12 N105PH16 N0335SC160 N0180SH120 N0290SG120 N195PH12 N0131SH120
Contextual Info: Type VDRM ITAV VRRM TC=55°C ITSM I2t 10ms ½ sine VT0 rT @TJM VR ≤60% VRRM Part No. Old Part No. V A A N0131SH120 N0131SH160 New> N0131SJ120 New> N0131SJ160 N0180SH120 N0180SH160 New> N0180SJ120 New> N0180SJ160 N0290SC120 N0290SC160 New> N0290SG120 New> N0290SG160

AX1209

Abstract: LF40100M LF40100
Contextual Info: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for

MBR40100PT

Abstract: Sirectifier Semiconductors 40HF P460
Contextual Info: MBR40100PT High Tjm +175oC Schottky Barrier Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 Symbol VDC V 100 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845

mbr40100pt

Abstract: 40HF P460
Contextual Info: MBR40100PT High Tjm +175oC Schottky Barrier Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 Symbol VDC V 100 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

Thermal Resistance vs. Mounting Pad Area

Abstract: TB377
Contextual Info: Thermal Resistance vs. Mounting Pad Area Technical Brief October 1999 TB377 Author: J. Wojslawowicz T JM – T A P DM = -Z θJA 300 RθJA = 103.2 - 24.3 250 Rθβ, RθJA (oC/W) The maximum rated junction temperature, TJM, and the

MBRB2515L

Contextual Info: MBRB2515L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-263 D2PAK C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode MBRB2515L VRRM V 15 VRMS V 10.5 Symbol 1. 2. 3. 4. VDC V 15 Characteristics Gate Collector Emitter Collector Botton Side

MBRB2515L

Abstract: SEMPO ELECTRONIC
Contextual Info: MBRB2515L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-263 D2PAK C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode MBRB2515L VRRM V 15 VRMS V 10.5 Symbol 1. 2. 3. 4. VDC V 15 Characteristics Gate Collector Emitter Collector Botton Side

MZS100-12

Abstract: MZS100-10 MZS100-SERIES
Contextual Info: BL GALAXY ELECTRICAL RECTIFIER MODULE MZS100-SERIES Type VRRM V IF(AV) (A) IRM (mA) VFM (V) TJM (℃) IFSM (A) RTH(J-C) (℃/W) insulative voltage (V) Size Code Exterior Code MZS100-02 200 100 ≤5 ≤1.6 150 650 0.8 2500 8 L MZS100-04 400 100 ≤5 ≤1.6

MZS400-SERIES

Abstract: MZS400-12
Contextual Info: BL GALAXY ELECTRICAL RECTIFIER MODULE MZS400-SERIES VRRM V IF(AV) (A) IRM (mA) VFM (V) TJM (℃) IFSM (A) RTH(J-C) (℃/W) insulative voltage (V) Size Code Exterior Code MZS400-02 200 400 ≤12 ≤1.6 150 2500 0.25 2500 10 M MZS400-04 400 400 ≤12 ≤1.6

MBR30200PT

Abstract: MBR30200 MBR30100PT 8RMS MBR30150PT
Contextual Info: MBR30100PT thru MBR30200PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR30100PT MBR30150PT MBR30200PT VRRM V 100 150 200 VRMS V 70 105 140 Symbol VDC V 100 150 200

Contextual Info: Application Note #9 Á tjM W M É '& r HISH PtRFOflMANCH ANALOG INTEGRATED CIRCUITS Driving Reactive Loads with High Frequency Op-Amps Driving Reactive Loads with High Frequency Op-Amps by Barry Harvey and Chris Siu As the bandw idth of op-amps today pushes past 100

MZS200-10

Abstract: MZS200-04
Contextual Info: BL GALAXY ELECTRICAL RECTIFIER MODULE MZS200-SERIES VRRM V IF(AV) (A) IRM (mA) VFM (V) TJM (℃) IFSM (A) RTH(J-C) (℃/W) insulative voltage (V) Size Code Exterior Code MZS200-02 200 200 ≤10 ≤1.6 150 1100 0.5 2500 10 M MZS200-04 400 200 ≤10 ≤1.6

mzs300

Contextual Info: BL GALAXY ELECTRICAL RECTIFIER MODULE MZS300-SERIES VRRM V IF(AV) (A) IRM (mA) VFM (V) TJM (℃) IFSM (A) RTH(J-C) (℃/W) insulative voltage (V) Size Code Exterior Code MZS300-02 200 300 ≤11 ≤1.6 150 1700 0.3 2500 10 M MZS300-04 400 300 ≤11 ≤1.6

7N60B equivalent

Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain

Contextual Info: Dim ensions * h N gi 19-6 r2000 n-?/w 3\tjm ± Stroke and Pull Force Characteristics \ \ \\ \s \ \\ v\ \ ( n) gt Power and Pull Force Characteristics \ - / Oram 2700gf 4 2 W (26.5N ) Oram 2600gf 34 W / / >/ \ (10%) (12 % ) - Oram 2400gf 2 6 W (16 % ) - Onm 2300gf I7W

IRFP260 equivalent

Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
Contextual Info: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200

IXFH32N50Q equivalent

Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Contextual Info: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω

MBR20100CT

Abstract: MBR2070CT MBR2080CT MBR2090CT
Contextual Info: MBR2070CT thru MBR20100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR2070CT MBR2080CT MBR2090CT MBR20100CT VRRM V 70 80 90 100 VRMS V

MBR10100CT

Abstract: MBR1070CT MBR1080CT MBR1090CT
Contextual Info: MBR1070CT thru MBR10100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR1070CT MBR1080CT MBR1090CT MBR10100CT VRRM V 70 80 90 100 VRMS V