TO-18 TRANSISTOR Search Results

bfw11 jfet

Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72

"P-Channel JFETs"

Abstract: 2N5116
Contextual Info: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92

CQ417

Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
Contextual Info: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A

Contextual Info: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

Contextual Info: 18 V, Micropower, CMOS, Rail-to-Rail Input/Output Operational Amplifier AD8546 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA

n3860

Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394

2N2970

Abstract: 2N2108 2N2971 2N2475 2N2846 2N2017 2N2107 2N2192A 2N2193A 2N2194A
Contextual Info: TO-5 TO-18 TO-18 TO-5 TO-5 TO-18 TO-18 TO-5 TO-18 TO-18 O 1 CMIOIO O 1 r r T T IO O O O O ^ ¡8 S ” 8 o o io o Q O CD '«T io IO IO CM<M O O O O O 8 8 * * 8 O O O O O O O O C O IO ’«r -«r i- O O O O O LO co co co o CM -r-t- CVJ O O O O O O O O CO00

2n2712 data sheet

Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0

2N2925

Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394

2N2924

Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394

SUP60N06-18

Abstract: SUB60N06-18 SUB60N06
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUB60N06-18

Abstract: SUP60N06-18
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

u13t1

Abstract: UNITRODE U-66 U13T2 unijunction application note
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEA TU RES DESCRIPTION • • • • • • The Unitrode hermetically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These

transistor ah-16

Abstract: 2N2907A transistor PNP TRANSISTOR AH 16
Contextual Info: Small Signal General Purpose Transistor PNP 2N2907A Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case: Terminals:

UNITRODE U-66

Abstract: U13T1-U13T2 unijunction application note U13T1 U13T2 U131
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEATURES DESCR IPTIO N • • • • • • The Unitrode herm etically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These

Contextual Info: DATA SHEET ICS83940-02 ICS83940-02 Integrated DIFFERENTIAL-TOLOW SKEW, 1-TO-18 Circuit Systems, Inc. LVCMOS/LVTTL FANOUT BUFFER LOW SKEW, 1-TO-18 DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS83940-02 is a low skew, 1-to-18 Fanout

BSX26

Abstract: transistor BSX26
Contextual Info: BSX26 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for switching applications up to 500 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter

P50N06

Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18
Contextual Info: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB

ad8657

Abstract: A2N transistor AD8500 AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1
Contextual Info: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 μV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA

Contextual Info: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 µV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA

2N3397

Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

2N2926

Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN

2n3013

Contextual Info: 2N3013 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3013 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS