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    TO66 PACKAGE Search Results

    TO66 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO66 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp 500v

    Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


    Original     		PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA pnp 500v vbe 10v, vce 500v NPN Transistor NTE175

    NTE404

    Abstract: No abstract text available
    Text: NTE404 Hardware Heat Sink for TO66 Type Package Includes Base and Top Piece Description: The NTE404 is a 2-piece heat sink designed for circuit board mounting. Specifications: Finish . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Black Anodize


    Original     		PDF NTE404 NTE404

    Untitled

    Abstract: No abstract text available
    Text: POSITIVE ADJUSTABLE VOLTAGE REGULATOR IP117R IP117AR IP117HVR IP117AHVR / / / / LM117R LM117AR LM117HVR LM117AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package


    Original     		PDF IP117R IP117AR IP117HVR IP117AHVR LM117R LM117AR LM117HVR LM117AHVR O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: NEGATIVE ADJUSTABLE VOLTAGE REGULATOR IP137R IP137AR IP137HVR IP137AHVR / / / / LM137R LM137AR LM137HVR LM137AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package


    Original     		PDF IP137R IP137AR IP137HVR IP137AHVR LM137R LM137AR LM137HVR LM137AHVR O-213AA)

    lm137 datasheet

    Abstract: IP137AHVR IP137AR IP137HVR IP137R LE17 LM137AHVR LM137AR LM137HVR LM137R
    Text: NEGATIVE ADJUSTABLE VOLTAGE REGULATOR IP137R IP137AR IP137HVR IP137AHVR / / / / LM137R LM137AR LM137HVR LM137AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package


    Original     		PDF IP137R IP137AR IP137HVR IP137AHVR LM137R LM137AR LM137HVR LM137AHVR O-213AA) lm137 datasheet IP137AHVR IP137AR IP137HVR IP137R LE17 LM137AHVR LM137AR LM137HVR LM137R

    "PNP Transistor"

    Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
    Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


    Original     		PDF NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO


    Original     		PDF BDX14A O-213AA)

    NTE124

    Abstract: 325V
    Text: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,


    Original     		PDF NTE124 NTE124 100mA 10MHz 250mA, 100mA, 10MHz, 100kHz 325V

    NTE131MP

    Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
    Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.


    Original     		PDF NTE131 NTE155 100mA NTE131MP NTE155 NTE131 germanium transistors NPN Germanium power

    2N3767

    Abstract: LE17
    Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N3767 143mW/ 300us, O-213AA) 2N3767 LE17

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO IC PD TJ Tstg Collector - Emitter Voltage


    Original     		PDF BUX62 O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034)


    Original     		PDF 2N4910X 2N4911X 2N4912X O-213AA) 500mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N3767 143mW/Â 300us, O-213AA)

    LM117R

    Abstract: IP117 IP117AHVR IP117AR IP117HVR IP117R LE17 LM117 LM117AHVR LM117AR
    Text: POSITIVE ADJUSTABLE VOLTAGE REGULATOR IP117R IP117AR IP117HVR IP117AHVR / / / / LM117R LM117AR LM117HVR LM117AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package


    Original     		PDF IP117R IP117AR IP117HVR IP117AHVR LM117R LM117AR LM117HVR LM117AHVR O-213AA) LM117R IP117 IP117AHVR IP117AR IP117HVR IP117R LE17 LM117 LM117AHVR LM117AR

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO


    Original     		PDF BDX14A O-213AA)

    2N5629

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz


    Original     		PDF 2N5430" 2N5430 2N5430X 30MHz 2N5581" 2N5581 2N5581-JQR-B 250MHz 2N5629

    NTE276

    Abstract: SCR Inverter datasheet
    Text: NTE276 Silicon Controlled Rectifier SCR Gate Controlled Switch Features: D Gate Turn−Off Thyristor D High Speed Power Switching D TV Horizontal Output D Inverter and Converter Application D Supplied in a Japanese TO66 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE276 250mA NTE276 SCR Inverter datasheet

    semelab 2N6287

    Abstract: 2N6300J 2n6278 to63
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


    Original     		PDF 2N6298" 2N6298 2N6298-JQR-B 2N6276" 2N6276 2N6276A 2N6276A-JQR-B 2N6276-JQR-B 2N6374" 2N6374 semelab 2N6287 2N6300J 2n6278 to63

    2N4900

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N4900" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4900 PNP TO66 80V 4A 20 100 1/0.5 3MHz


    Original     		PDF 2N4900" 2N4900 2N4900X

    IC 8823

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N6235R • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg


    Original     		PDF 2N6235R O-213AA) IC 8823

    scr 5 amp

    Abstract: 600v 5A scr NTE5511 NTE5513 400 amp SCR used for welding rectifier NTE5512 scr control circuit for welding SCR 30A 200V silicon controlled rectifier
    Text: NTE5511 thru NTE5513 Silicon Controlled Rectifier SCR 5 Amp, TO66 Description: The NTE5511 thru NTE5513 all−diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power−control and power−switching applications. These devices are available in


    Original     		PDF NTE5511 NTE5513 NTE5513 200mA, scr 5 amp 600v 5A scr 400 amp SCR used for welding rectifier NTE5512 scr control circuit for welding SCR 30A 200V silicon controlled rectifier

    bux6

    Abstract: No abstract text available
    Text: SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO IC PD TJ Tstg Collector - Emitter Voltage


    Original     		PDF BUX62 O-213AA) bux6

    Untitled

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "BUX61" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUX61 NPN TO66 200V 8A 20 60 4/3 8MHz 70W


    Original     		PDF BUX61" BUX61 BUX62" BUX62 BUY81 60MHz BUY82" BUY82 BUY82CECC

    Untitled

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


    Original     		PDF 2N6298" 2N6298 2N6298-JQR-B