TRANSISTOR 2SA1049 Search Results

TRANSISTOR 2SA1049 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8

TRANSISTOR 2SA1049 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
2SC5471 Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN	Original	2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: TOSHIBA 2SA1049 2 S A 1 049 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. Small Package. High Breakdown Voltage : VCEO= —120V (Min.) High hjpg : hjrE = 200~700 Excellent hjpg Linearity	OCR Scan	2SA1049 --120V 2SC2459. 961001EAA2' 2SA1049 2SC2459	PDF
hjr 1 Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1049 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1049) AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm 4.2MAX. Small Package. High Breakdown Voltage : V q e q = —120V (Min.) High iiFE	OCR Scan	2SA1049) --120V 2SC2459. 2SA1049 hjr 1	PDF
A1049 Abstract: 2SA1049 2SC2459 Contextual Info: TOSHIBA 2SA1049 2 S A 1 049 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • 4.2M AX. Small Package. High Breakdown Voltage : V^EO = —120 V High hjpg : hjpg = 200~ 700 Excellent hjpg Linearity	OCR Scan	2SA1049 2SC2459. 000707EAA2' A1049 2SA1049 2SC2459	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
2SA1049 Abstract: transistor 2SA1049 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. · High breakdown voltage: VCEO = −120 V · High hFE: hFE = 200~700 · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 transistor 2SA1049 2SC2459	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
2SC3378 Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184 Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current	OCR Scan	2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184	PDF
Contextual Info: 2SA1049 T O SH IB A 2 S A 1 049 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . Small Package. High Breakdown Voltage : VCEO= —120V (Min.) High hpE : hpE = 200~700 Excellent hpg Linearity	OCR Scan	2SA1049 2SC2459.	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF

2sc2240 equivalent Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent Contextual Info: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation	OCR Scan	OT-23MOD. 2SC2712 2SA1162 2SC2713 2SA1163 2SC2859 2SA1182 2SC3138 2SA1255 2SC3265 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent	PDF
2SC2459 Abstract: 2SA1049 2SC245 01OL Contextual Info: TO SHIBA 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 AUDIO AM PLIFIER APPLICATIONS Unit in mm 4.2M AX. • High Breakdown Voltage : V ç;e O = 120V (Min.) • High DC Current Gain : hjnE = 200~700 • Excellent hjpg Linearity	OCR Scan	2SC2459 2SA1049. 2SC2459 2SA1049 2SC245 01OL	PDF
2SC2459 Abstract: transistor 2sc2459 2SA1049 Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) · High DC current gain: hFE = 200~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)	Original	2SC2459 2SA1049. 2SC2459 transistor 2sc2459 2SA1049	PDF
2SA1049 Abstract: 2SC2459 transistor 2sc2459 Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)	Original	2SC2459 2SA1049. 2SA1049 2SC2459 transistor 2sc2459	PDF
2SC2459 Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)	Original	2SC2459 2SA1049. 2SC2459	PDF
transistor 2sc2459 Abstract: 2SC2459 Contextual Info: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS \| High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)	OCR Scan	2SC2459 2SA1049. transistor 2sc2459 2SC2459	PDF
2SC2459 Abstract: 2SA1049 Contextual Info: T O S H IB A 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 AUDIO AMPLIFIER APPLICATIONS Unit in mm 4.2M AX. • High Breakdown Voltage : V çje O = 120 V (Max.) • High : hjpg — 200~ 700 • Excellent hjpg Linearity . DC Current Gain	OCR Scan	2SC2459 2SA1049. 000707EAA2' 2SC2459 2SA1049	PDF
transistor 2sc2459 Abstract: 2SC2459 Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR 2SC2459 T n C U ID A • w w ■ II TECHNICAL DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2459) AUDIO AMPLIFIER APPLICATIONS • High Breakdown Voltage : V(Je q = 120V (Min.) • High DC C urrent Gain : h;pE = 200~700	OCR Scan	2SC2459 2SC2459) 2SA1049. 2SC2459 transistor 2sc2459	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: TO SH IB A 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm AUDIO AM PLIFIER APPLICATIONS 4.2M AX. High Breakdown Voltage : V q e q = 120V (Min.) High DC Current Gain : h j P E = 200~700 Excellent hpE Linearity : h p E ( I = 0.1mA) / h j r g ( I = 2mA) = 0.95 (Typ.)	OCR Scan	2SC2459 2SA1049. 2SA1049 2SC2459	PDF
2SC3378 Abstract: 25A1048 Contextual Info: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>	OCR Scan	2SC2458 I2SA1048 2SK365 2SK367 2SK370 2SK371 2SK372 2SC3378 25A1048	PDF

TRANSISTOR 2SA1049 Search Results

TRANSISTOR 2SA1049 Result Highlights (5)

TRANSISTOR 2SA1049 Datasheets Context Search

MN1280

oz960

2SC5471

y51 h 120c

2SA1049

hjr 1

A1049

2SA1049

2SA1049

2SA1049

2SA1049

2SC3378

Transistor 2SA 2SB 2SC 2SD

2sc2240 equivalent

2SC2459

2SC2459

2SA1049

2SC2459

transistor 2sc2459

2SC2459

transistor 2sc2459

2SA1049

2SC3378