TRANSISTOR 800A 711 Search Results

TRANSISTOR 800A 711 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 800A 711 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
rm3 transistor Abstract: BUK478 Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.	OCR Scan	76-800A/B BUK446-800A/B 7110flSb -800A -800B BUK476 BUK476-800A/B 7110f rm3 transistor BUK478	PDF
TRANSISTOR 40 Abstract: BUK474-800A Contextual Info: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK474-800A/B BUK444-800A/B 711002b BUK474 -800A -800B T-39-09 BUK474-800A/B 0044b33 TRANSISTOR 40 BUK474-800A	PDF
BUK426-800A Contextual Info: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK426-800A/B BUK426 -800B T-39-11 7110fl5tj BUK426-800A	PDF
BUK428-800A Abstract: BUK428-800B transistor cms Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.	OCR Scan	OT199 BUK428-800A/B 711002b BUK428 -800A -800B BUK428-800A BUK428-800B transistor cms	PDF
K428 Abstract: BUK428-800B diode K428 BUK428-800A K-428 BUK428 Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.	OCR Scan	OT199 BUK428-800A/B 711002b BUK428 -800A -800B K428 BUK428-800B diode K428 BUK428-800A K-428	PDF
k426 Abstract: LD 25 V BUK426-800A transistor bu Contextual Info: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK426-800A/B 711005t. BUK426 -600A -800B PINNING-SOT199 k426 LD 25 V BUK426-800A transistor bu	PDF
GI 312 diode Abstract: sc1s3 K638 BUK638 BUK638-800A GDH473T Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERN A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK638-800A/B 711DflSh GDH473T BUK638 -800A -800B 71100Eb GI 312 diode sc1s3 K638 BUK638-800A	PDF
DIODE B97 Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909 Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK446-800A/B 76-800A/B -SOT186A 7110flSb DCI44fc BUK476 -800A -800B BUK476-800A/B 7110fi2b DIODE B97 BUK446-800A BUK446-800A application BUK476-800A BUK476-800B 3909	PDF
K638 Abstract: idm 73 Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK638-800A/B 711Gfl2b BUKS38 -800A K638-800A/B K638 idm 73	PDF
BUK474 Abstract: BUK474-800A BUK474-800B 3909 Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 - 7 ^ 3 9 -— C f? BUK474-800A/B PowerMOS transistor Replaces B U K 4 4 4 -8 0 0 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK444-800A/B PINNING-SOT186A BUK474-800A/B 711002b BUK474 -800A -800B BUK474-800A BUK474-800B 3909	PDF
Contextual Info: T -3 9 -V Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK428-800A/B PowerMOS transistor SbE D PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK428-800A/B BUK428 -800A -800B	PDF
100-P Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor Contextual Info: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.	OCR Scan	711002b BUK446-800A/B -SOT186 BUK446 -800A -800B 7110a2b 100-P BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor	PDF
pj 66 diode Abstract: 100-P BUK438-800A BUK438-800B Contextual Info: PHILIPS INTERNATIONAL ¡□SE ]> 711002b 3fi4 H P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode fìeld-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	7110fl2b BUK438-800A/B BUK438 -800A -800B pj 66 diode 100-P BUK438-800A BUK438-800B	PDF
bsh 13 - n1 Abstract: BUK436-800A BUK436-800B Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711062b BUK436-800A/B BUK436 -800A -800B bsh 13 - n1 BUK436-800A BUK436-800B	PDF

diode RP 6040 Abstract: 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711062b BUK436-800A/B BUK436 -800A -800B 7110A2fci diode RP 6040 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors	PDF
AFLB Abstract: ic 4075 ic 4075 or gate 800B BUK454-800A BUK454-800B T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 7110aSb ODbHQTl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	711002b BUK454-800A/B T0220AB BUK454 -800A -800B AFLB ic 4075 ic 4075 or gate 800B BUK454-800A BUK454-800B	PDF
s00b Abstract: PQZ1 Contextual Info: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711002b BUK456-800A/B BUK456 -800A -80QB -T0220AB 711062b 00b4130 s00b PQZ1	PDF
100-P Abstract: BUK454-800A BUK454-800B T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711DflSt. 00b4D71 BUK454-800A/B T0220AB BUK454 -800A -800B 100-P BUK454-800A BUK454-800B	PDF
BUK456 Abstract: BUK456-800A BUK456-800B Contextual Info: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	7110fl2b BUK456-800A/B -T0220AB BUK456 -800A -800B 711062b DQb4130 BUK456-800A BUK456-800B	PDF
DSAFRZWS Contextual Info: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711DfiSh BUK436-800A/B BUK436 -800A -800B DSAFRZWS	PDF
BUK444 Abstract: BUK444-800A BUK444-800B YA11 Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	7110fl2b BUK444-800A/B OT186 BUK444 -800A -800B BUK444-800A BUK444-800B YA11	PDF
philips ID 35 Abstract: BUK436-800A Contextual Info: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711Qfl2b BUK436-800A/B BUK436 -800A -800B philips ID 35 BUK436-800A	PDF
100-P Abstract: BUK438-800A BUK438-800B Contextual Info: PHIL I PS I N T E R N A T I O N A L bSE » B 711002b O O b S « ^ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	71iafl2b BUK438-800A/B BUK438 -800B 100-P BUK438-800A BUK438-800B	PDF
2711-K5A2 Abstract: 2711-NC1 TFT capacitive touchscreen, 16M colors 2711-b5a5 Allen-Bradley vfd 755 fault list 2706-D21J2 T12C6 2711-K5A1 slc 500 database to excel 2711-B5A2 Contextual Info: Section Seven Operator Interface Operator Interface Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-3 Message Displays MessageView Interactive Message Display Terminals . . . . . . . . . . . . . . . . . . 7-6 Dataliner Message Displays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	ConfigJ64 2706-E43J64B1 2706-E43J128 2706-E43J128B1 2711-B5AÀ 2711-K5AÀ 2711-K9AÀ 2711-K9CÀ 2711-T9AÀ 2711-T9CÀ 2711-K5A2 2711-NC1 TFT capacitive touchscreen, 16M colors 2711-b5a5 Allen-Bradley vfd 755 fault list 2706-D21J2 T12C6 2711-K5A1 slc 500 database to excel 2711-B5A2	PDF

TRANSISTOR 800A 711 Search Results

TRANSISTOR 800A 711 Result Highlights (5)

TRANSISTOR 800A 711 Datasheets Context Search

rm3 transistor

TRANSISTOR 40

BUK426-800A

BUK428-800A

K428

k426

GI 312 diode

DIODE B97

K638

BUK474

100-P

pj 66 diode

bsh 13 - n1

diode RP 6040

AFLB

s00b

100-P

BUK456

DSAFRZWS

BUK444

philips ID 35

100-P

2711-K5A2