Untitled
Abstract: No abstract text available
Text: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO -92 • Collector-Emitter Voltage: Veto =40V • Collector Dissipation: Pe max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit Collector-Base Voltage
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2N4402/4403
625mW
2N4403
2N4402
025D30
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS8098
625mW
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Untitled
Abstract: No abstract text available
Text: S AM S U N G SEMICONDUCTOR INC MPS6601 14E O | 7^ 4142 0007331 3 | NPN EPITAXIAL SILICON TRANSISTOR ' T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vceo=25V • Collector Dissipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)
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MPS6601
625mW
T-29-21
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SOT23 marking sk
Abstract: KSC2715 Transistor marking SK marking sk sot-23 marking sk transistor
Text: SAMSUNG S EMI C O NDU CT OR 14ED1 INC KSC2715 ? c , b4142 OOO^S? 1 | f ' 3 i m NPN EPITAXIAL SILICO N TRANSISTOR FM RADIO AMP, MIX, CONV OSC, IF AMP SOT-23 • High Power Gain G pe=30dB ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol VcbO VcEO Vebo
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000L137
KSC2715
OT-23
T-31-15
SOT23 marking sk
Transistor marking SK
marking sk sot-23
marking sk transistor
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Untitled
Abstract: No abstract text available
Text: KSR1212 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47KQ) • Complement to KSR2212 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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KSR1212
KSR2212
b414g
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Untitled
Abstract: No abstract text available
Text: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER S O T -2 3 HIGH <T fr =1100MHz Typ. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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KSC2757
1100MHz
b4142
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KSR1108
Abstract: KSR2108 Inverter mma 300
Text: ISAMSUNG SEMIGONDUGTOR INCjT-SS-J 1 4 E | 7^4145 0007053 1 | KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, inverter, Interface circuit Driver circuit • Built In bias Resistor (Rt=47K(l, Ri=22Kfi)
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00Q7053
KSR1108
47KC1,
KSR2108'
OT-23
KSR2108
Inverter mma 300
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Untitled
Abstract: No abstract text available
Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 • Collector Current lc =1.SA • Collector Dissipation PC=2W Tc =25 C ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Ch a ra cteristic
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SS8050
SS8550
b4142
D02S1Ã
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Untitled
Abstract: No abstract text available
Text: .SAMSUNG SEMICONDUCTOR INC M PSH 20 mE D | TTbMlME Q0 G 73 fl 4 S J NPN EPITAXIAL SILIC O N TR A N SISTO R VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current
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Untitled
Abstract: No abstract text available
Text: 6DI15M-12005A y<r7 - h *7 È ± 'N ° 9 — i. — : Outline Drawings POWER TRANSISTOR MODULE 93 I Features 26.5 12.5 • u High Arm Short Circuit Capability • hFEA^v,' High DC Current Gain • yyj — —KF*g Including Freewheeling Diode • ifefeii&JT2 Insulated Type
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6DI15M-12005A)
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transistor bc 209 npn
Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
Text: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )
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KSD1692
O-126
PWC10
KSD5000
IC-5V--54B2
L-50OiM
0007b3?
transistor bc 209 npn
transistor bc 207 npn
transistor BC 209
TRANSISTOR BC 208
bc 301 transistor
transistor darlington 800v
transistor bc 207
TRANSISTOR BC 206
IC-5V-54B2
KSD1693
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transistor B414
Abstract: 6DI15M-120 transister transisters FREE transisters 5C t transistor T151 CZ 553 5C transistor transistor 08
Text: 6DI15M-12005A y<r7 - h *7 È ± 'N ° 9 — i. — : Outline Drawings POWER TRANSISTOR MODULE 93 I Features 26.5 12.5 • u • hFE A ^v,' High DC Current Gain 7.5 20 • yyj — —KF*g . • ifefeii&JT2 Insulated Type 1 7.5 16 17.5 / k 1 f E U -S V - EVBW
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6DI15M-12005A)
Br-T16S8
19S24^
I95t/R89)
transistor B414
6DI15M-120
transister
transisters
FREE transisters
5C t transistor
T151
CZ 553
5C transistor
transistor 08
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transistor B414
Abstract: transister 6DI15M-120
Text: 6DI15M-12005A -'1?r7 — I* È ± 'N ° 9 — — )l* POWER TRANSISTOR MODULE • fë d l: : Features • High Arm Short Circuit Capability • hFE A ^v,' High DC Current Gain • 7 l) — Including F reew heeling Diode Insulated Type : Applications • i/L E K > ' < — 9
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6DI15M-12005A)
transistor B414
transister
6DI15M-120
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a 4514
Abstract: transistor B414
Text: 6 D I1 5 M - 1 2 0 is a '< * 7 — Y *7 > i * 7 > 9 d . — )\* : Outline Drawings POWER TRANSISTOR MODULE : Features 2G.5 7.5 14 7.5 IJ 7.5 16 • 3SS&ItS*''rSl'<' High Arm Short Circuit Capability • h F E A '^ l' High DC Current Gain 9 — t — K 1*1/ Including Free Wheeling Diode
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l95t/R89
Shl50
a 4514
transistor B414
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ka3642
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> KA3842B/3B/4B/5B • 7 T b m 4 2 D017M0Ô EM7 ■ SMGK LINEAR INTEGRATED CIRCUIT CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixe frequency current-mode PWM controller. They are specially designed for Off-Line and DC-to-DC converter applications with minimal.external
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KA3842B/3B/4B/5B
D017M0Ã
KA3842B/3B/4B/5B
KA3842B
KA3844B
D17414
KA3842B
KA3642B
ka3642
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samsung flyback pin diagram
Abstract: flyback samsung diagram samsung flyback tv KA2137 k2137 tv flyback samsung diagram samsung tv samsung flyback diagram S6510 flyback samsung
Text: SAMSUNG S E M I C ON DU CT OR INC Tä ' DE|7%4142 - • - : 0004145 r ^ i - c n LINEAR INTEGRATED CIRCUIT KÄ2137 TV HORIZONTAL PROCESSOR The KA2137 Is a horizontal processor circu it fo r B/W. and color tele vision receiver. It Is a m onolithic integrated circu it encapsulated In
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KA2137
16-lead
samsung flyback pin diagram
flyback samsung diagram
samsung flyback tv
k2137
tv flyback samsung diagram
samsung tv
samsung flyback diagram
S6510
flyback samsung
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR L T 104V 3-102 S pecifications April 1995, Rev. 1 CONTENTS PAGE Record of Revision 3 General Description 4 1. Absolute Maximum Rating 5 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings 2. Optical Characteristics 6 3. Electrical Characteristics
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----------LT104V3-102-01
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29V040
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us
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KM29V040T
512Kx8Bit
512Kx8
500us
400mil/0
KM29V040T
KM29V040
-TSOP2-400F
-TSQP2-400R
29V040
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Untitled
Abstract: No abstract text available
Text: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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KM29N040T
512Kx8Bit
KM29N040T
32-byte
500us
120ns/byte.
KM29N040
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V16000AT/R
250us
71L4142
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D0241_S4
Abstract: No abstract text available
Text: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register
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KM29N16000ET/R
00241b3
D0241_S4
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L4142
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V16000AT/R
250us
L4142
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N32000T/R 4M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array - Data Register The KM29N32000T/R is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND
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KM29N32000T/R
KM29N32000T/R
528-byte
250ns
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