BC638
Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter
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BC638
BC638
BC637
transistor bc638
BC637
BC638BU
BC638TA
BC638TF
BC638TFR
Bc638 transistor PNP
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transistor c63716
Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement
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BC637;
BCP55;
BCX55
BC637
SC-43A
BC638
BCP55
OT223
SC-73
BCP52
transistor c63716
c637 transistor
c63716
transistor C637
bc638 equivalent
bc639 equivalent
BC637
BC638
BCP52
BCX52
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BC637
Abstract: BC638
Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A Complementary to BC637. N E K J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO
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BC638
BC637.
-150mA
-500mA,
-50mA
-500mA
-50mA,
100MHz
BC637
BC638
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c63716
Abstract: transistor c63716 C637 C-63716 BC637 BC637-16 BC638 BCP52 BCP55 BCX52
Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 — 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA
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BC637;
BCP55;
BCX55
BC637
SC-43A
BC638
BCP55
OT223
SC-73
BCP52
c63716
transistor c63716
C637
C-63716
BC637-16
BC638
BCP52
BCP55
BCX52
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BC637
Abstract: BC638
Text: SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A Complementary to BC638. N E K J SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5
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BC637
BC638.
150mA
500mA,
500mA
100MHz
BC637
BC638
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO
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BC638
BC637.
-10mA,
-150mA
-500mA,
-50mA
-500mA
-50mA,
100MHz
Width300
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC638. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5
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BC637
BC638.
150mA
500mA,
500mA
100MHz
Width300
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BC638
Abstract: BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3
Text: BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units -60 V VCER Collector-Emitter Voltage at RBE=1KΩ
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BC638
BC637
BC638
BC638TA
transistor bc638
BC637
BC638BU
BC638TF
BC638TFR
Transistor Marking C3
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NPN transistor ECB TO-92
Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
NPN transistor ECB TO-92
Bc637
BC635 ECB
transistor C 639 W
transistor BC637 complement
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bc639
Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
2bc639
fairchild date code
transistor BC637 complement
applications of Transistor BC639
bc639 fairchild
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bc736
Abstract: transistor C 639 W bc639 BC635 BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
bc639
BC635
BC637
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bc635
Abstract: transistor C 639 W
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc635
transistor C 639 W
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Untitled
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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PDF
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
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BC635
Abstract: bc639 BC637
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
BC635
bc639
BC637
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BC637
Abstract: BC638
Text: SEMICONDUCTOR TECHNICAL DATA BC638 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC637. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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BC638
BC637.
-10mA,
-100juA,
-10J/A,
150mA
--500mA,
-50mA
--500mA
-50mA,
BC637
BC638
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BC637
Abstract: BC638
Text: SEMICONDUCTOR TECHNICAL DATA BC637 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC638. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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BC637
BC638.
100j/A,
10j/A,
150mA
500mA,
500mA
100MHz
BC637
BC638
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transistor C639
Abstract: transistor C635 c639 transistor C639 w
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
transistor C639
transistor C635
c639
transistor C639 w
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BC639 collector
Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC639 collector
transistor 639
640 TRANSISTOR NPN
transistor BC637 complement
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BC639 philips
Abstract: BC639 BC635-16 BC635 BC636 BC637 BC638 BC640 IEC134 d 2923
Text: BC635; BC637; BC639 PHILIPS INTERNA TI O NA L 5bE D 7 11002b 00*45052 bTS « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - Z ° l- 2 3 N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.
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BC635;
BC637;
BC639
711002b
BC636,
BC638
BC640.
BC635
BC637
BC639 philips
BC635-16
BC636
BC640
IEC134
d 2923
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BC635 TRANSISTOR E C B
Abstract: transistor C 639 W
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC635 TRANSISTOR E C B
transistor C 639 W
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.
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D27SC
BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635
BC637
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bc639
Abstract: bc640 transistor BC637 complement BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639-10
Text: T> m N AUER PHILIPS/DISCRETE ^53^31 □□EVS'ìD T?^ B A P X A BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages o f audio amplifiers. P-N-P complements are BC636, BC638 and BC640.
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BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635
BC637
bc639
bc640
transistor BC637 complement
BC635-10
BC636
BC637-10
BC639-10
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transistor C 639 W
Abstract: bc736 transistor BC637 complement BC635 transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS Ta= 250C Characteristic C o lle c to r E m itter V olta ge : at R Be = 1Kohm : : C o lle c to r E m itter V olta ge :
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BC635/637/639
BC635/638f640
BC635
BC637
BC639
transistor C 639 W
bc736
transistor BC637 complement
transistor 639
fa 506
BC637
BC639
TI 506 transistor
I100O
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BC639
Abstract: BC635 TRANSISTOR E C B
Text: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.
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BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635
BC637
BC639
BC635 TRANSISTOR E C B
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