TRANSISTOR BH RW Search Results

TRANSISTOR BH RW Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BH RW Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLX67 Abstract: mrtil transistor 3568 Contextual Info: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,	OCR Scan	G014DDM BLX67 T-33-Ã BLX67 mrtil transistor 3568	PDF
car inverter theory Abstract: baxandall chopper transformer winding formula sterling inverter diagrams 2N1552 2N3612 3 phase inverter 120 conduction mode theory 1961 motorola power transistor handbook 2N2527 12VOLT SCR DIAGRAMS Contextual Info: AN-222 Application Note THE ABC’SOFDCTOAC Revised by amination inverters. .~{ of the entire Among the proper inverter tion; operating of inverters; field of dc to ac the topics discussed are; for a specific principlesof the problem applica- different selection in the design of inverters,	Original	AN-222 2N651 115-VOLT AN222 car inverter theory baxandall chopper transformer winding formula sterling inverter diagrams 2N1552 2N3612 3 phase inverter 120 conduction mode theory 1961 motorola power transistor handbook 2N2527 12VOLT SCR DIAGRAMS	PDF
TRANSISTOR BH RW Abstract: BH Re transistor Contextual Info: M IT S U B IS H I BIPOLAR D IG ITA L ICs M54569P 8 -U N IT 30m A PNP TR A N S IS TO R ARRAY DESCRIPTION The M54569P, general purpose transistor array, consists of 8 PIN CONFIGURATION TOP VIEW °N P transistors connected in a common-emitter configuraion.	OCR Scan	M54569P M54569P, M54569P --20mA ----20mA TRANSISTOR BH RW BH Re transistor	PDF
Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery	OCR Scan	OT227B BUK617-500AE/BE BUK617 0030fib4 1E-02	PDF
TRANSISTOR BH RW Contextual Info: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape	OCR Scan	62702-F1129 1200MÍ 900MHz 800MHz /400MHz 300MH 00MHz -921s TRANSISTOR BH RW	PDF
transistor 2sc2630 Abstract: 2SC2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2630 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in V H F band m obile radio applications. R1 FEATURES	OCR Scan	2SC2630 175MHz 175MHz, 175MHz 2SC2630 transistor 2sc2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR	PDF
TRANSISTOR BH RW Abstract: Opto-Sensor reflective Opto-Sensor GE opto detector Contextual Info: Temic C NY7 0 S e m i c o n d u c t o r s Reflective Optosensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using	OCR Scan	CNY70 D-74025 12-Dec-97 TRANSISTOR BH RW Opto-Sensor reflective Opto-Sensor GE opto detector	PDF
TRANSISTOR BI 243 Contextual Info: Eli SLOTTED OPTICAL SWITCH OPTOELECTRONICS H22A1/2/3 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. - P t L <t>b bi 10.7 11.0 .422 .433 3.0 3.2 .119 .125 .024 .030 .600 .750 .50 NOM. 11.6 12.0 .020 NOM. .457 3.0 3.3 .119 .129 6.9 7.5 .272 .295 e2 E 2.3 2.8 .091	OCR Scan	H22A1/2/3 ST1340-01 H22A2 H22A3 H22A1 4bbB51 D00b47H TRANSISTOR BI 243	PDF
KS621K3010 Abstract: powerex ks62 14B21 Contextual Info: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3	OCR Scan	KS62453010 Fee010 KS62453010 KS621K3010 KS621K3010 powerex ks62 14B21	PDF
ifm D 45128 Abstract: kd 2060 transistor Contextual Info: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents	Original	CR0032 CR0032) ifm D 45128 kd 2060 transistor	PDF
BUK543 Abstract: BUK543-100A BUK543-100B Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor	OCR Scan	711065b BUK543-100A/B -SOT186 BUK543 BUK543-100A BUK543-100B	PDF
8051 microcontroller interface with ir sensors Abstract: iron bh curve siemens Mass Air Flow Sensor siemens TLE 4905L TRANSISTOR BH RW TESLA transistor Bipolar Static Induction Transistor ir slotted wheel encoder camshaft sensor target wheel axial sensing real time application of shape memory alloys Contextual Info: SIEMENS 6 Silicon Hail-Effect Sensors 6.1 Introduction Silicon Hall-Effect Sensors Electrical Tests and Application Circuit • The sockets or integrated circuits must not be conducting any voltage when individual devices or assembled circuit boards are inserted or withdrawn, unless works’	OCR Scan		PDF
smd transistor e42 Abstract: smd diode 3s4 SMD IC 3H3 ferroxcube 3E1 3R1 toroid push-pull converter design etd49 3R1 ferrite etd39 core type smps transformer design soft ferrite handbook Contextual Info: Ferroxcube Soft Ferrites Applications APPLICATIONS Material requirements: Introduction • Low losses • Defined temperature factor to compensate temperature drift of capacitor Soft ferrite cores are used wherever effective coupling between an electric current and a magnetic flux is	Original	MBW422 smd transistor e42 smd diode 3s4 SMD IC 3H3 ferroxcube 3E1 3R1 toroid push-pull converter design etd49 3R1 ferrite etd39 core type smps transformer design soft ferrite handbook	PDF
TRANSISTOR FF75 Abstract: 1BW TRANSISTOR Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module	OCR Scan	34D32CI7 TRANSISTOR FF75 1BW TRANSISTOR	PDF

TEMPLATEA Abstract: kd 2060 transistor Contextual Info: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents	Original	CR0303 CR0303) document09 TEMPLATEA kd 2060 transistor	PDF
Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module	OCR Scan		PDF
Q002 Abstract: transistor BU 110 BU 500 DT 1BW TRANSISTOR Contextual Info: T Î3 9 -3 / F 300 R 06 KL SEE EUPEC 34G32T7 D T1 7 « U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein /per module 0,1 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 300 A RthCK	OCR Scan	34G32T7 34D32CI7 Q002 transistor BU 110 BU 500 DT 1BW TRANSISTOR	PDF
Contextual Info: TO SH IB A 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage	OCR Scan	2SC5422	PDF
H0A1887 Abstract: A1887 HOA1887 HOA1887-012 Contextual Info: HOA1887 Transmissive Sensor FEATURES . Choice of phototransistor or photodarlington output • Side mount package . Ambient light and dust protective filter • Accurate position sensing . 0.010 in. 0.25mm aperture windows • 0.125 in.(3.18 mm) slot width	OCR Scan	HOA1887 HOA1887 HOA1887-011, HOA1887-013) H0A1887 A1887 HOA1887-012	PDF
RZ2731B48W Abstract: USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw Contextual Info: 7 3 3 /3 Philips Components Data sheet status Product specification date of Issue June 1992 RZ2731B48W 711002b 5bE D e m itte r e ffic ie n c y . • D iffu s e d e m itte r b a lla s tin g resistors p ro v id in g e x c e lle n t c u rre n t sharing ' 0Ü4L572	OCR Scan	RZ2731B48W 4L572 T-33-13 711005b 004bS77 RZ2731B48W USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw	PDF
k20s Abstract: NPN planar RF transistor RZ3135B14W Contextual Info: 7= 3 3 -/'' Philips Components Data sheet status Prelim inary specification date of Issue Jun e 1992 PHILIPS RZ3135B14W NPN silicon planar epitaxial microwave power transistor INTERNAT IONAL FEATURES Sb E D 711Dö2tj • In te rd ig ita te d s tru c tu re ; high	OCR Scan	RZ3135B14W 711002b D04bSÃ 100fis T-33-1T 7110aSb k20s NPN planar RF transistor RZ3135B14W	PDF
transistor c961 Contextual Info: bitemational [ÎÔR]Rectifier Preliminary Data Sheet PD - 5.036 IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT CPU165MK • Short Circuit Rated - 10 js @ 125°C, Vge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses	OCR Scan	CPU165MK 360Vdc, 00A/ps 125-C C-962 transistor c961	PDF
1BW TRANSISTOR Abstract: F300R06KF R600 Contextual Info: 7 =3 f - 3 / F300R 06K F EUPEC SEE • 3M 032T7 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 300 A le 2 ^ O O O O B M fl Thermische Eigenschaften Transistor Transistor D HUPEC Thermal properties DC, pro Baustein/p e r module	OCR Scan	F300R06KF 3M032T7 34D32CI7 1BW TRANSISTOR F300R06KF R600	PDF
transistor smd MJ 145 Abstract: g10 smd transistor transistor smd bh SMD Transistor 502 c858 Contextual Info: P D - 9.1130 International [iÖR1Rectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features 10 • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating inciudes all "tail* losses • Optimized for high operating frequency over 5kHz	OCR Scan	IRGBC20K-S SMD-220 C-860 transistor smd MJ 145 g10 smd transistor transistor smd bh SMD Transistor 502 c858	PDF

TRANSISTOR BH RW Search Results

TRANSISTOR BH RW Result Highlights (5)

TRANSISTOR BH RW Datasheets Context Search

BLX67

car inverter theory

TRANSISTOR BH RW

TRANSISTOR BH RW

transistor 2sc2630

TRANSISTOR BH RW

TRANSISTOR BI 243

KS621K3010

ifm D 45128

BUK543

8051 microcontroller interface with ir sensors

smd transistor e42

TRANSISTOR FF75

TEMPLATEA

Q002

H0A1887

RZ2731B48W

k20s

transistor c961

1BW TRANSISTOR

transistor smd MJ 145