TRANSISTOR BU 110 Search Results

TRANSISTOR BU 110 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BU 110 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k552 Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BU K552-1OOA/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	K552-1OOA/B BUK552 -100A -100B BUK552-100A/B k552	PDF
Transistor 51Y Abstract: 51y diode S20Q Contextual Info: Product Specification Philips Semiconductors BU K554-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	K554-200A/B BUK554 -200A -200B T0220AB BUK554-200A/B Transistor 51Y 51y diode S20Q	PDF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,	OCR Scan	T0220AB BUJ403A	PDF
buz350 Contextual Info: U AUER PHILIPS/DISCRETE PowerMOS transistor OLE D • fabS3131 0014753 7 ■ BU Z350 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	fabS3131 T0218AA; 001475L BUZ350 T-39-13 00147SS buz350	PDF
K545 Abstract: BUK545 BUK545-200A BUK545-200B Contextual Info: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	7110flEb K545-200A/B -SOT186 BUK545 -200A K545 BUK545-200A BUK545-200B	PDF
Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	D014b33 BUZ63_ bbS3T31 T-39-11 BUZ63 14h3fl III11 i111111	PDF
K545 Contextual Info: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	bb53R31 K545-1OOA/B PINNING-SOT186 BUK545 003D7bS BUK545-100A/B K545	PDF
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 \|j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bbS3T31 DD144D2 bb53T31 BUZ71 T-39-11 00144D7 BUZ71_	PDF
Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • tbS3T31 00147T4 1 BU Z385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor	OCR Scan	tbS3T31 00147T4 Fig25Â BUZ385 T-39-13 bb53TBl	PDF
Contextual Info: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	014S4C BUZ80A_ BUZ80A T-39-11	PDF
toroid FT10 Abstract: BUL45F 221A-06 221D BUL45 MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU L45* BUL45F* Designer’s Data Sheet NPN Silicon Power Transistor 'M otorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and in Switchmode Power	OCR Scan	BUL45F, E69369 BUL45 BUL45F toroid FT10 221A-06 221D MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt	PDF
BUK442-100A Abstract: BUK442-100B Contextual Info: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.	OCR Scan	K442-1OOA/B EUK442 -100A OT186 BUK442-100A BUK442-100B	PDF
transistor BC 536 Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor Contextual Info: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage	OCR Scan	V777- T0126 15A3D1N 15A3DIN transistor BC 536 aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor	PDF
transformer ferrite core Abstract: noyau de ferrite N2468 TRANSISTOR 641 transistor BU 110 ferrite core coil 1-10 mH 1-4 A schema d un transistor en thomson ferrite core transistor Bu thomson deflection coil Contextual Info: BU 129 NPN S ILIC O N T R A N S IS T O R , TR IP L E D IF F U S E D MESA TR A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E The BU 129 transistor is primarly intended for use in horizontal deflection output stage for 110° • 12" 20 mm neck black and white	OCR Scan	CB-19 transformer ferrite core noyau de ferrite N2468 TRANSISTOR 641 transistor BU 110 ferrite core coil 1-10 mH 1-4 A schema d un transistor en thomson ferrite core transistor Bu thomson deflection coil	PDF

MTPBP10 Abstract: UL-44 l44 transistor transistor L44 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pffcr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed	OCR Scan	BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44	PDF
BUK416-100AE Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x Contextual Info: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in	OCR Scan	G03D440 BUK416-1OOAE/BE OT227B BUK416 bb53R31 BUK416-1OO0E BUK416-100AE YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x	PDF
TRANSISTOR MARKING CODE R2A Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1 Contextual Info: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage	OCR Scan	DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1	PDF
BUZ84 Contextual Info: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ84 T-39-13 S3131 BXXZ84_ D0147Q2 BUZ84	PDF
transistor N100 Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911 Contextual Info: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ42 0014SDb T-39-11 transistor N100 N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911	PDF
705 transistor Abstract: transistor BU 705 transistor BU 109 TOP-3 weight transistor BU 110 u 110 telefunken Scans-0014927 Contextual Info: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 i n u m i d ì « ! electronic Creative Ttchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage	OCR Scan	DIN41 T-33-/S T-33-13 705 transistor transistor BU 705 transistor BU 109 TOP-3 weight transistor BU 110 u 110 telefunken Scans-0014927	PDF
transistor Bu 208 Abstract: BU407 transistors bu 407 Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BU 407 BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection	Original	O-220 BU407 C-120 transistor Bu 208 BU407 transistors bu 407	PDF
on 2518 transistor Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11 Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time	OCR Scan	T-33-11 15A3DIN on 2518 transistor transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11	PDF
buz23 Contextual Info: PowerM OS transistor_ _ BU Z23 N AMER PHILIPS/DISCRETE ObE D • bbSSTBl D O m S T l T July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	DD145^ BUZ23 T-39-11 bbS3T31 0D14ST7 buz23	PDF
transistor Bc 82 Abstract: B 722 P 12A3 BU902 T0126 transistor c s z 44 v Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'iBDO'îb O O O W ? . TnHLtMFtLDK]BS l!?a electronic BU 902 C rta tiv e Tfccbnotoot« Silicon NPN Power Transistor r - 3 3 .-13 Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time	OCR Scan	T0126 15A3DIN transistor Bc 82 B 722 P 12A3 BU902 T0126 transistor c s z 44 v	PDF

TRANSISTOR BU 110 Search Results

TRANSISTOR BU 110 Result Highlights (5)

TRANSISTOR BU 110 Datasheets Context Search

k552

Transistor 51Y

buz350

K545

K545

toroid FT10

BUK442-100A

transistor BC 536

transformer ferrite core

MTPBP10

BUK416-100AE

TRANSISTOR MARKING CODE R2A

BUZ84

transistor N100

705 transistor

transistor Bu 208

on 2518 transistor

buz23

transistor Bc 82