TRANSISTOR MARKING CG Search Results

BCX70L

Abstract: BCX70
Contextual Info: UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 1 CG 2 3 SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70L ABSOLUTE MAXIMUM RATINGS Ta = 25℃ unless otherwise noted PARAMETER Collector-Base Voltage

Contextual Info: CMBT4126 GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking CMBT4126 = 5E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 Ó.09 0.48 038 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 2.6 1.2 2.4 R0.1 .004 ' _1. 02 _ 0.12

2SC5053

Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package package marking: 2SC5053; CG-*, where ★ is hFE code PC = 2Wwhen mounted on a 40x 40 x 0.7 mm ceramic substrate 2SC5053 (MPT3) . 5 »02 2-a, 1.6 * 0.1 * =Ea_ TT

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM

BF998W

Abstract: SOT 343 MARKING BF BF998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998W

Abstract: 998 transistor bf998 102001 transistor BF 998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998R

Abstract: 998 transistor transistor BF 998
Contextual Info: BF998R Silicon N-Channel MOSFET Tetrode
Short-channel transistor with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration

BF970

Contextual Info: SIEMENS PNP Silicon RF Transistor BF 970 • For UHF mixer and oscillator stages Type Marking Ordering Code BF 970 - Q62702-F650 Pin Configuration 1 2 3 B C Package1* E T-plast Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Veto 35

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

k d 998 0

Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Contextual Info: BF 998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

Silicon N Channel MOSFET Tetrode

Abstract: Q62702-F1772 marking code g1s BF 2000W
Contextual Info: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration

BF998

Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
Contextual Info: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129

Contextual Info: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1

marking code g1s

Abstract: Q62702-F1771 VPS05178 marking G2s
Contextual Info: BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor with high S/C quality factor 4 • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code Pin Configuration BF 2000 NDs 1=S Q62702-F1771

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

transistor C5001

Abstract: C5001 transistor transistor marking C5001 2SC5001F5 C5001 R transistor B 560
Contextual Info: 2SC5001F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: C5001 where ★ is hF£ code and □ is lot number • 2SC5001F5 (CPT F5) 51 |— high-speed switching, tf = 0.3 |is for Ic = 6 A • low collector saturation voltage,

Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998

BF167

Abstract: transistor BF 37
Contextual Info: TELEFUNKEN ELECTRONIC aie D fi^SDO^b OOOSlbO B F 167 TTiOJlIFiyiKlCSiKI electronic Creative Techrxriogtes Silicon NPN Planar RF Transistor Applications! Controlled video IF amplifier stages in common emitter configuration Features: • Small feedback capacitance

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

MMIC SOT 363 marking CODE 77

Abstract: SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86
Contextual Info: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 W • No bias coil needed • Single positive supply voltage • Low noise figure and high gain