TRANSISTOR SOT89 Search Results

transistor

Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Contextual Info: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

BFQ19

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic

Philips FA 145

Abstract: BFQ17
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION BFQ17 PINNING NPN transistor in a SOT89 plastic

sot89 "NPN TRANSISTOR"

Abstract: npn TRANSISTOR SOT89 BFQ18A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ18A PINNING NPN transistor in a plastic SOT89

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ149 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope.

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2SB1424

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

smd transistor LY

Abstract: smd transistor ISS smd transistor ISS 7
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology.

mpsa13l

Abstract: mpsa13 MPSA13G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free

MPSA13L

Abstract: utc mpsa13
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Normal Lead Free

MPSA13L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free

MPSA13L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Package Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW „ ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC

Contextual Info: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating

TS16949

Abstract: ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89
Contextual Info: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.

marking dk sot-89

Abstract: 2SC4672L-AB3-R dk SOT89 2SC4672 UM MARKING SOT89 transistor dk 50 2SC4672-AB3-R dk SOT-89 SOT-89 marking DK marking DK sot89
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC4672 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION 1 The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at

dk marking code sot-89

Abstract: dk qw transistor dk 50 dk qw TRANSISTOR marking dk sot-89 2sc4672 marking Marking Code ES SOT-89 2SC4672 dk transistor 2SC4672G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low saturation voltage, typically VCE(SAT)=0.1V at