TRANSISTOR T0 92 Search Results

B1329

Abstract: transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934
Contextual Info: Transistors TO -92L • TO -92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L T0-92LS Pc W (Ta=25°C )

2SB1333

Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.

2N5770

Abstract: T0-92A T092A
Contextual Info: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage

2N5770

Abstract: T0-92A MICRO ELECTRONICS ltd transistor
Contextual Info: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal High frequency amplifiers and oscillators. 1 CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage

Contextual Info: CRO MPS8097 NPN SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

TRANSISTOR 2341

Abstract: T0-92A MPS8097
Contextual Info: IVI SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. ? •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

146R

Abstract: CL146 T0-92B
Contextual Info: CL146 NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G EN ERA L DESCRIPTION T0-92B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment where small size is of paramount importance.

c 8550 transistor

Abstract: 8550 ecb
Contextual Info: T0-92B G EN ER A L D ESC R IP T IO N :Tlie 0 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the au d io ou tp u t stage and converter/inverter circuits. C om plem entary to 8550. T0-92B M A X IM U M R A T IN G S (Note 1) M axim um Temperatures

STA92N

Abstract: STC42N T0-92N
Contextual Info: STA92N Semiconductor PNP Silicon Transistor Descriptions • High voltage application Features • High collector-emitter voltage : VCEO=-300V • Complementary pair with STC42N Ordering Information Type NO. Marking Package Code STA92N STA92 T0-92N Outline Dimensions

transistor BC 945

Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
Contextual Info: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage

transistor mps3704

Abstract: MPS3704 MPS3706 IC600 MPS3705
Contextual Info: nataSheet MPS3704 MPS3705 MPS3706 Central Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION

C2N3704

Abstract: 2N3704 2N3706 2n3705 transistor 2n3704 2n3704 transistor 2N3704 datasheet
Contextual Info: Datasheet Central 2N3704 2N3705 2N3706 Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE ( EC B ) Manufacturers of World Class Discrete Semiconductors DESCRIPTION

Contextual Info: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C BE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO

FET 2N5459

Abstract: transistor 5457 fet 2n5457 2n5458 2n5457 2n5459 FET 2N5458 transistor 2N5458 transistor 2N5457 fet junction n-channel transistor
Contextual Info: CRO 2N5458 2N5459 N-CHANNEL JUNCTION FET DESCRIPTION T0-92DD 2N 5457,8.9 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. DSC ABSOLUTE MAXIMUM RATINGS Draiu-Source Voltage VDS 25V Drain Current ID 25mA Gate Current ÍG

BF224

Abstract: G510
Contextual Info: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO

2SK19

Abstract: transistor 2sk19 2SK19BL 2sk19-bl
Contextual Info: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a=25°C

2n2711

Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
Contextual Info: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A

2N3415

Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
Contextual Info: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors

T0-92B

Contextual Info: 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. CASE T0-92B <cy I !I • ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage VCBO 60V Collector-Emitter Voltage VCEO

BC556-BC558

Abstract: BC556.BC558 BC558
Contextual Info: BC556 - BC558 PNP EPITAXIAL PLANAR TRANSISTOR Features • · · Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548 E A C Mechanical Data · · · · Case: T0-92, Plastic

BF224

Contextual Info: CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO Collector-Emitter Voltage

2SK19Y

Abstract: 2SK19
Contextual Info: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a= 2 5 °C

pin diagram of transistor BC548

Abstract: BC548 ,BC558 pin diagram of transistor BC558 BC546-BC548 BC548 npn BC547 collector characteristic curve bc548 bc558
Contextual Info: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features • · · Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 E A TO-92 B C Mechanical Data · · · · Case: T0-92, Plastic

transistor 2sk19

Abstract: 2SK19Y 2sk19 2sK19 FET transistor 2sk Scans-0012719 2SK19BL 2SK19 GR 2SK19-BL FET 2SK19
Contextual Info: CRO DESCRIPTION 2SK19 N-CHANNEL SILICON FET CASE T0-92DD 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a= 2 5 °C