TRANSISTOR T18 Search Results

TRANSISTOR T18 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR T18 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK543-60A/B BUK543	PDF
BUK543 Abstract: BUK543-60A BUK543-60B TTA10 Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack	OCR Scan	BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK444-200A/B BUK444 -200A -200B	PDF
BUK445-100A Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK445-100A/B BUK445 -100A -100B BUK445-100A	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK445-60A/B BUK44S	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK446-800A/B BUK446 -800A -800B	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK441-100A/B BUK441 -100A -100B	PDF
transistor BUK444-500B Abstract: BUK444-500B Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK444-500B transistor BUK444-500B BUK444-500B	PDF
EUK442 Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK442-100A/B EUK442 -100A -100B	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
B 647 AC transistor Abstract: uav specification transistor 2TH Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK452-60A/B BUK472-60A/B BUK472 T186A B 647 AC transistor uav specification transistor 2TH	PDF
BUK445 Abstract: BUK445-60A BUK445-60B Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	711002b BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B	PDF
BUK441 Abstract: BUK441-60A BUK441-60B 3909 Contextual Info: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.	OCR Scan	PINNING-SOT186 BUK441-60A/B 711D0Eb BUK441 711002b. 00MMSb3 BUK441-60A BUK441-60B 3909	PDF
TRANSISTOR 1FU Abstract: BUK444 BUK444-200A BUK444-200B Contextual Info: PHILIPS INTERNATIONAL bSE 3> • 7110fl2b 0Db3Rtil S3T ■ PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	BUK444-200A/B -SOT186 TRANSISTOR 1FU BUK444 BUK444-200A BUK444-200B	PDF

RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
BU1508DX Abstract: SOT166 Contextual Info: N AMFR PHILIPS/DISCRETE b^E 3> • bbSB^l DÜ2Ô333 33T ■ APX Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated	OCR Scan	BU1508DX OT186A; OT186 BU1508DX SOT166	PDF
BUK445-600B Abstract: 100-P Contextual Info: PHILIPS INTERNATIONAL b5E » B 711065b DDbMQll 7b3 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in	OCR Scan	BUK445-600B -SOT186 BUK445-600B 100-P	PDF
BUK445 Abstract: BUK445-60A BUK445-60B IT48 Contextual Info: PHILIPS INTER NAT IONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B IT48	PDF
BUK441 Abstract: BUK441-60A BUK441-60B Contextual Info: -7 ^ 3 9 -O Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.	OCR Scan	PINNING-SOT186 BUK441-60A/B 711002b BUK441 7110fl2fc. 00MMSb3 BUK441-60A BUK441-60B	PDF
BUK444-600B Abstract: 100-P 003US Contextual Info: N AMER PHILIPS/DISCRETE bTE D m bbSBTai 0030540 TOO * A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	BUK444-600B -SOT186 bbS3T31 0D3D544 BUK444-600B 100-P 003US	PDF
Contextual Info: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in	OCR Scan	DD3DS35 BUK444-500B bb53331 bbS3131	PDF
BUK444-400B Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sti D0fci3^bti Dll M P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	711D6Sti BUK444-400B -SOT186 BUK444-400B	PDF
BUK445-500B Contextual Info: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	711062b BUK445-500B -SOT186 BUK445-500B	PDF
Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	bbS3R31 BUK445-400B bbS3T31 bbS3131	PDF

TRANSISTOR T18 Search Results

TRANSISTOR T18 Result Highlights (5)

TRANSISTOR T18 Datasheets Context Search

BUK543

BUK445-100A

transistor BUK444-500B

EUK442

sx3704

B 647 AC transistor

BUK445

BUK441

TRANSISTOR 1FU

RCA H 541

BU1508DX

BUK445-600B

BUK445

BUK441

BUK444-600B

BUK444-400B

BUK445-500B