TRAS 250NS Search Results

TAA 981

Abstract: HY5118160 HY5118160JC
Contextual Info: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

tras 250ns

Abstract: sdram controller XAPP132 baa0 vhdl code for sdram controller vhdl code for DCM
Contextual Info: MCH_OPB Synchronous DRAM SDRAM Controller (v1.00a) DS492 April 4, 2005 Product Specification Introduction LogiCORE Facts The Xilinx Multi-CHannel-OPB(MCH_OPB) SDRAM controller provides a SDRAM controller that connects to the OPB bus and multiple channel interfaces, and provides the

intel 2117

Abstract: S6054 2117S
Contextual Info: in t e i 2117 FAMILY 2117-2 2117-3 2117-4 Maximum Access Time ns 150 200 250 Read, Write Cycle (ns) 320 375 410 Read-Modlfy-Wrlte Cycle (ns) 330 375 475 N on-Latched Output is Three-State, T T L Com patible RAS Only Refresh 128 Refresh Cycles Required Every 2ms

Contextual Info: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

hy51v18164b

Contextual Info: “H Y U N D A I HYM5V32224A X-Series 2M X 32-bit CMOS ORAM MODULE DESCRIPTION The HYM5V32224A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0 22^F decoupling capacitor is

hy5118164b

Contextual Info: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: “ H Y U N D A I H Y M 5 V 6 4 2 2 0 A X - S e r ie s 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64220A is a 2M x 64-bit Fast page mode CMOS DRAM module consisting of eight HY51V18160B in 42/42 pin SOJ, 44/50pin TSOP and two 16-bit BiCMOS line driver in TSSOP on a 168 pin giass-epoxy printed circuit

Contextual Info: HYUNDAI HYM5V64120A X-Series 2M X 64-bit CMOS DRAM MODULE DESCRIPTION Ttie HYM5V64120A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 44/50pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed

HY5118160

Contextual Info: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

1OC05

Contextual Info: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor

HY51V18164B

Contextual Info: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques

HY51V181648

Contextual Info: ‘ HYUNDAI HYM5V64224A X-Series 2M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V181648 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF

HYM532220SLTW

Abstract: HYM532220 HY5118160
Contextual Info: •HYUNDAI HYM532220 W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each

HY5118160

Abstract: HYM532120
Contextual Info: •HYUNDAI H Y M 532120 X-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted

hy5118160b

Contextual Info: •«YUNDAI HYM532120A W-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for

RAS 0610

Abstract: ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164 hy51v18164b
Contextual Info: »HYUNDAI HYM5V72A124A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168

HY5118164B

Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
Contextual Info: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY51V18164B

Contextual Info: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques

odq1

Abstract: HYM532120
Contextual Info: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each

Contextual Info: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

A1HV

Abstract: OQ11 SLTC
Contextual Info: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260

HY514260B

Contextual Info: H Y 5 1 4 2 6 0 B "HYUNDAI S e r ie s 2S6KX 16-bit CMOS DRAM with 2CAS PRELIMINARY DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access