7040K
Abstract: No abstract text available
Text: UTRON UT65L1616 E /UT65L1616(I) 1M X 16 BITS LOW POWER PSEUDO SRAM Rev. 1.2 REVISION HISTORY REVISION DESCRIPTION Draft Date Rev. 1.0 Original. Apr 15, 2003 Rev. 1.1 Delete Partial refresh function Aug 06,2003 Rev. 1.2 Add Package : 48-pin 12mmX20mm TSOP-I
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UT65L1616
/UT65L1616
48-pin
12mmX20mm
P80080
216-bit
UT65L1616BS-60LLI
7040K
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tsop i 12mmx20mm
Abstract: Utron SRAM Utron SRAM 512K X
Text: UTRON Rev. 1.1 UT65L168 E /UT65L168(I) 512K X 16 BITS LOW POWER PSEUDO SRAM REVISION HISTORY REVISION Rev. 1.0 Rev. 1.1 DESCRIPTION Original. 1. Delete Partial refresh function 2. Add Package : 48-pin 12mmX20mm TSOP-I UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
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UT65L168
/UT65L168
48-pin
12mmX20mm
P80094
608-bit
UT65L168BS-60LLI
tsop i 12mmx20mm
Utron SRAM
Utron SRAM 512K X
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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MSA1020
Abstract: sc 6700 Mitsubishi flash
Text: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)
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L-61103-0A
40ms/Block
14mm2
11mm2
L-61104-0A
MSA1020
sc 6700
Mitsubishi flash
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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MX23L256
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
MX23L256
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MX23L12840
Abstract: No abstract text available
Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L12840
128M-BIT
MX23L12840
48-pin
44-pin
576Note
16Note)
512Note)
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MX23L6440
Abstract: pm0829
Text: PRELIMINARY MX23L6440 64M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L6440 is a 64 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 512
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MX23L6440
64M-BIT
MX23L6440
48-pin
44-pin
576Note
16Note)
512Note)
pm0829
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
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SST32HF162
Abstract: SST32HF164 SST32HF202 SST32HF402 SST32HF802 LFBGA48 LFBGA-48 128Kx16
Text: Product Brief January 2002 ComboMemory TM Multi-Purpose Flash + SRAM SST32HF Series SST ComboMemory Advantages: Features ∆ Flash ∆ Integrated Flash and SRAM for Small Form Factor Design –Superior Reliability –Small Sector –Fast Erase –Low Power Consumption
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SST32HF
SST32HF202:
SST32HF402:
SST32HF802:
15-DQ8
SST32HF162
SST32HF164
SST32HF202
SST32HF402
SST32HF802
LFBGA48
LFBGA-48
128Kx16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L12840
128M-BIT
MX23L12840
48-pin
44-pin
576Note
16Note)
512Note)
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tsop i 12mmx20mm
Abstract: MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom
Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J12840
128M-BIT
576Note)
16Note)
512Note)
48-pin
12mmx20mm)
MacronixCT/28/2005
tsop i 12mmx20mm
MX23J12840
MX23J12840TC-50
MX23J12840TC-50G
MX23J12840TI-50G
xtrarom
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L6440 64M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L6440 is a 64 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 512
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MX23L6440
64M-BIT
MX23L6440
48-pin
44-pin
576Note
16Note)
512Note)
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Untitled
Abstract: No abstract text available
Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J12840
128M-BIT
576Note)
16Note)
512Note)
48-pin
12mmx20mm)
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xtrarom
Abstract: No abstract text available
Text: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J25640
256M-BIT
152Note)
16Note)
512Note)
48-pin
12mmx20mm)
xtrarom
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GPR27P01GA
Abstract: No abstract text available
Text: GPR27P01GA 1G-BIT NAND INTERFACE OTP Aug. 03, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS However, GENERALPLUS TECHNOLOGY INC. makes no warranty for any errors which may
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GPR27P01GA
GPR27P01GA
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GPR27P512A
Abstract: No abstract text available
Text: GPR27P512A 512M-BIT NAND INTERFACE OTP Aug. 05, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS
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GPR27P512A
512M-BIT
GPR27P512A
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TC55VBM316ATGN55
Abstract: TMPR3903AF TMPR3916F TC55VBM316ASGN55 32X8 sram TC90A70F ARM926EJ-S TCM5063T ARM926EJ TC59LM806CFT
Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年2月号 英ARM社のARM926EJ-Sマイクロプロセッサ・コアのライセンスを取得 当社は英ARM社から ARM926EJ-STMコアのライセンスを取得しました。これにより当社は、
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ARMARM926EJ-S
ARM926EJ-STM
ARM926EJ-S
ARM946E-S
7-3405FAX.
TC55VBM316ATGN55
TMPR3903AF
TMPR3916F
TC55VBM316ASGN55
32X8 sram
TC90A70F
ARM926EJ-S
TCM5063T
ARM926EJ
TC59LM806CFT
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SST39WF160x
Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Text: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb
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AM29F
SST39SF
S29AL
S29GL
SST39VF
SST38VF
S29AS
SST39WF
SST39WF160x
AM29F
SST25VF016B
tsop i 12mmx20mm
48-WFBGA
SST38VF640x
TSOP 28 SPI memory Package flash
FLASH CROSS sst39vf040
WFBGA-48
48TSOP
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SST25VF128
Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Text: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash
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