TSOP I 12MMX20MM Search Results

7040K

Contextual Info: UTRON UT65L1616 E /UT65L1616(I) 1M X 16 BITS LOW POWER PSEUDO SRAM Rev. 1.2 REVISION HISTORY REVISION DESCRIPTION Draft Date Rev. 1.0 Original. Apr 15, 2003 Rev. 1.1 Delete Partial refresh function Aug 06,2003 Rev. 1.2 Add Package : 48-pin 12mmX20mm TSOP-I

tsop i 12mmx20mm

Abstract: Utron SRAM Utron SRAM 512K X
Contextual Info:  UTRON Rev. 1.1 UT65L168 E /UT65L168(I) 512K X 16 BITS LOW POWER PSEUDO SRAM REVISION HISTORY REVISION Rev. 1.0 Rev. 1.1 DESCRIPTION Original. 1. Delete Partial refresh function 2. Add Package : 48-pin 12mmX20mm TSOP-I UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

MSA1020

Abstract: sc 6700 Mitsubishi flash
Contextual Info: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM

MX23L256

Contextual Info: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x

MX23L12840

Contextual Info: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x

MX23L6440

Abstract: pm0829
Contextual Info: PRELIMINARY MX23L6440 64M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L6440 is a 64 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 512

Contextual Info: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x

SST32HF162

Abstract: SST32HF164 SST32HF202 SST32HF402 SST32HF802 LFBGA48 LFBGA-48 128Kx16
Contextual Info: Product Brief January 2002 ComboMemory TM Multi-Purpose Flash + SRAM SST32HF Series SST ComboMemory Advantages: Features ∆ Flash ∆ Integrated Flash and SRAM for Small Form Factor Design –Superior Reliability –Small Sector –Fast Erase –Low Power Consumption

Contextual Info: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x

Contextual Info: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x

tsop i 12mmx20mm

Abstract: MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom
Contextual Info: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to

Contextual Info: PRELIMINARY MX23L6440 64M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L6440 is a 64 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 512

Contextual Info: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to

xtrarom

Contextual Info: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to

GPR27P01GA

Contextual Info: GPR27P01GA 1G-BIT NAND INTERFACE OTP Aug. 03, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS However, GENERALPLUS TECHNOLOGY INC. makes no warranty for any errors which may

GPR27P512A

Contextual Info: GPR27P512A 512M-BIT NAND INTERFACE OTP Aug. 05, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS

TC55VBM316ATGN55

Abstract: TMPR3903AF TMPR3916F TC55VBM316ASGN55 32X8 sram TC90A70F ARM926EJ-S TCM5063T ARM926EJ TC59LM806CFT
Contextual Info: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年2月号 英ARM社のARM926EJ-Sマイクロプロセッサ・コアのライセンスを取得 当社は英ARM社から ARM926EJ-STMコアのライセンスを取得しました。これにより当社は、

SST39WF160x

Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb

SST25VF128

Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Contextual Info: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash