TSQP40 Search Results

Contextual Info: M27C202 2 Mbit 128Kb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP40W (F)

Contextual Info: 5 7 . M28F211 M28F221 SGS-THOMSON RS0 gS3 (ó ÌlLi TO©K!IQ(§i 2 Megabit (x 8, Block Erase) FLASH MEMORY PRELIMINARY DATA • SMALLSIZE PLASTIC PACKAGETSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100|jA

Contextual Info: M29F080A 8 Mbit 1 Mb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME - 8 jas by Byte typical ■ 16 UNIFORM 64 Kbyte MEMORY BLOCKS

Contextual Info: SGS-THOMSON MOgtMlIgtLIgtg'ü’M D tgi_M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS

AN1122

Abstract: M29F016B
Contextual Info: M29F016B 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME - 8 jas by Byte typical ■ 32 UNIFORM 64 Kbyte MEMORY BLOCKS

a01494

Abstract: A19C Z3A18 ZDA17
Contextual Info: r z ^ T j S G S -T H O M S O N # . M28F841 IM 1 0 g [S [1 0 = [lO T (S M lB ( g S 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALLS1ZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each

flash m29w008B

Abstract: M29W008B M29W008T ah55
Contextual Info: M29W008T M29W008B 8 Mbit x8, Block Erase Low Voltage Single Supply Flash M em ory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10^is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE

Contextual Info: M27W402 4 Mbit 256Kb x 16 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 80ns at Vcc = 3.0V to 3.6V - 100ns at Vcc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C4002 ■ LOW POWER CONSUMPTION: - 15|aA max Standby Current

Contextual Info: r = 7 S G S -T H O M S O N À T # . IMD g[S i[UlOT(s l[ì Ì M 27C 1024 1 Megabit (64K x16) UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100(aA ■ PROGRAMMING VOLTAGE: 12.75V

XX20H

Abstract: I01498 A19D A13D
Contextual Info: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

Contextual Info: Æ T SGS-THOMSON ^7#» M27C516 KtlD S S lilLl(gTO(S)li!!ID(Êi 512K (32K x 16) OTP EPROM PRODUCT PREVIEW • FAST ACCESS TIME: 55ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ■ ELECTRONIC SIGNATURE for AUTOMATED

Contextual Info: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current

Contextual Info: SGS-THOMSON M27V402 R f f lD ^ [ llL liO T IjîO ll i LOW VOLTAGE _ 4 Megabit 256K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POW ER ’’CMOS” CONSUMPTION:

M27C1024

Abstract: Q0-Q15
Contextual Info: SGS-THOMSON SfflD IM'l[ L E © T M 2 7 C 1 024 1 Megabit 64K x16 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100(xA ■ PROGRAMMING VOLTAGE: 12.75V ■ ELECTRONIC SIGNATURE for AUTOMATED

C137E

Abstract: IA10 M29W040 M39432 si2730
Contextual Info: rZ J S G S -T H O M S O N M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA > 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS • 120ns ACCESS TIME FLASH and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS

28F016SCT-L90

Abstract: 28F008SA LH28F016SCT-L90 marking 6cz 28F016SCT
Contextual Info: P w x x n S i ill K'M 10'S Inl^iir.iiovl Circuib Group LH28P016SCT-L90 Flash Memory 16M 2 M x 8 (Model No.: LHF16CZ7) Spec No.: EL112031A Issue Date: April 8 ,1999 SHARP LHF16CZ7 •H andle this document carefully for it contains material protected by international

M27C1024

Abstract: plcc44 drawing
Contextual Info: 7 7 S G S -T H O M S O N kI t *, MtgOSmitgTTDMQtg M27C1024 1 Megabit 64K x16 UV EPROM and OTP ROM • FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS’ CONSUMPTION: - Active Current 35mA - Standby Current 10O^iA

S1757

Contextual Info: S C S 'IH O M S O N M27W402 û ^ O ^ ô i[L i© W (Q )K iia (g i VERY LOW VOLTAGE 4 Megabit (256K x 16) UV EPROM and OTP EPROM PRELIMINARY DATA VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V FAST ACCESS TIME: 150ns LOW POWER "CMOS” CONSUMPTION: - Active Current 15mA

AI02252

Contextual Info: Ì Z 7 SCS-THOMSON M29F105B 1 Mbit x16, Block Erase Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

PP1501

Abstract: KEY TRONIC 95
Contextual Info: M28W411 M28W421 / T 7 S G S -T H O M S O N * 7 # . H D s@ iiLi ra© i[i §i VERY LOW VOLTAGE 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­

L4570

Contextual Info: M27C202 2 Mbit 128Kb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current lOO^A ■ PROGRAMMING VOLTAGE: 12.75V+0.25V FD IP40W (F) PDIP40 (B)

M29W008B

Abstract: M29W008T
Contextual Info: M29W008T M29W008B 7 7 SGS-THOMSON 8 Mbit x8, Block Erase Low Voltage Single Supply Flash M em ory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10^is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)