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    M39432 Search Results

    M39432 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M39432 STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-10VNC6T STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-10WNC6T STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-12VNC1 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-12VNC5 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-12VNC6 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-12VNC6T STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-12WNC1 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-12WNC5 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-12WNC6 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-12WNC6T STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-15VNC1 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-15VNC5 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-15VNC6 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-15VNC6T STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-15WNC1 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-15WNC5 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-15WNC6 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF
    M39432-15WNC6T STMicroelectronics Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM Original PDF
    M39432-20VNC1 STMicroelectronics SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY Scan PDF

    M39432 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Part Marking STMicroelectronics flash memory

    Abstract: Diode Marking ef M29W040 M39432 ST EF 017
    Text: M39432 Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM • Multiple Memories on a Single Chip: – 4 Mbit Flash Memory organised as 8 sectors – 256 Kbit EEPROM – 64 Byte One Time Programmable Memory ■ CONCURRENT Mode (Read Flash while


    Original     		PDF M39432 TSOP40 Part Marking STMicroelectronics flash memory Diode Marking ef M29W040 M39432 ST EF 017

    JESD22-A112-A

    Abstract: HR-10 af55 c100nf M29W040 M39432 QREE9801 AF4F-M29V040
    Text: QREE9801 QUALIFICATION REPORT M39432 T6: FLASH+ Multiple Memory in TSOP40 The purpose of this document is to present the summary of the reliability tests performed to qualify the M39432 device. This multiple-memory device combines a Flash memory and an EEPROM on a single die,


    Original     		PDF QREE9801 M39432 TSOP40 M39432 JESD22-A112-A HR-10 af55 c100nf M29W040 QREE9801 AF4F-M29V040

    M29W040

    Abstract: M39432 AI02028
    Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM)


    Original     		PDF M39432 120ns M39432 M29W040 AI02028

    TSOP32 FOOTPRINT

    Abstract: disadvantages of microcontroller AN931 AN996 AN997 AN998 AN999 M29W040 M39432 TSOP32
    Text: AN997 APPLICATION NOTE M39432: a FLASH+ Multiple Memory Device The new FLASH+ technology, from ST, allows Flash memory and EEPROM to be fabricated together on a single die. Significant cost, speed and power consumption advantages are gained over designs that previously used two separate memories, or that previously used software to emulate the effect of having the


    Original     		PDF AN997 M39432: M39432 TSOP32 FOOTPRINT disadvantages of microcontroller AN931 AN996 AN997 AN998 AN999 M29W040 TSOP32

    M29W040

    Abstract: M39432 4Mbit eeprom
    Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while


    Original     		PDF M39432 120ns M39432 EEPR0-A18 120ns 150ns 200ns 250ns TSOP40 M29W040 4Mbit eeprom

    M29W040

    Abstract: M39432
    Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while


    Original     		PDF M39432 120ns M39432 M29W040

    4mbit eprom

    Abstract: 4Mbit eeprom 4mbit otp M29W040 M39432 AI01946
    Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while


    Original     		PDF M39432 120ns M39432 120ns 150ns 200ns 250ns TSOP40 AI01947 4mbit eprom 4Mbit eeprom 4mbit otp M29W040 AI01946

    AN999

    Abstract: M39432 ST10
    Text: AN999 APPLICATION NOTE Software Drivers for the M39432 FLASH+ Multiple Memory This document describes the primitive software drivers for use with the M39432. The M39432 is a singlechip memory device containing a 4 Mb block of single-voltage Flash memory, and a 256 Kb block of Parallel EEPROM. These routines have been developed on an evaluation board that was configured as follows:


    Original     		PDF AN999 M39432 M39432. 80C16X) 03FFFFH M39432 40000H 47FFFH 80000H AN999 ST10

    st10 flash erase

    Abstract: AN999 M39432 ST10
    Text: AN999 APPLICATION NOTE Software Drivers for the M39432 FLASH+ Multiple Memory This document describes the primitive software drivers for use with the M39432. The M39432 is a singlechip memory device containing a 4 Mb block of single-voltage Flash memory, and a 256 Kb block of Parallel EEPROM. These routines have been developed on an evaluation board that was configured as follows:


    Original     		PDF AN999 M39432 M39432. 80C16X) 03FFFFH M39432 40000H 47FFFH 80000H st10 flash erase AN999 ST10

    disadvantages of microcontroller

    Abstract: advantages of microcontroller TSOP32 FOOTPRINT eeprom parallel st TSOP32 pad AN931 AN996 AN997 AN998 AN999
    Text: AN997 APPLICATION NOTE M39432: a FLASH+ Multiple Memory Device The new FLASH+ technology, from ST, allows Flash memory and EEPROM to be fabricated together on a single die. Significant cost, speed and power consumption advantages are gained over designs that previously used two separate memories, or that previously used software to emulate the effect of having the


    Original     		PDF AN997 M39432: M39432 disadvantages of microcontroller advantages of microcontroller TSOP32 FOOTPRINT eeprom parallel st TSOP32 pad AN931 AN996 AN997 AN998 AN999

    TAG 9109

    Abstract: EEPROM COPIER circuit asm eagle m35080 ST24xx21 M2201 1205 SO8 ink cartridge chip tag 9114 M34C02
    Text: Application Specific Memories OPTIMUM SOLUTIONS Many factors influence memory costs, but Application Specific Memories ASM which incorporate features adapted to the specific system can provide optimised solutions. ASMs provide designers with two advantages: to improve the overall cost/performance of the


    Original     		PDF FLASM/1098 286-CJ103 TAG 9109 EEPROM COPIER circuit asm eagle m35080 ST24xx21 M2201 1205 SO8 ink cartridge chip tag 9114 M34C02

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    AN931

    Abstract: AN996 AN997 AN998 AN999 M29F040 M39432 TSOP32 AN-931 micron flash otp
    Text: AN996 APPLICATION NOTE Emulating the Unification of Flash and EEPROM: A Glossary Many microcontroller applications need both Flash memory and EEPROM. This document summarises the relevant issues and terminology involved in designing efficient systems with the two types of memory.


    Original     		PDF AN996 M39432: AN931 AN996 AN997 AN998 AN999 M29F040 M39432 TSOP32 AN-931 micron flash otp

    floating-gate

    Abstract: stmicroelectronics "serial eeprom" tunnelling diode AN931 AN996 AN997 AN998 AN999 M39432 hot electron devices
    Text: AN998 APPLICATION NOTE FLASH+ Multiple Memory Technology EPROM, Flash and EEPROM devices all use the same basic floating-gate mechanism to store data, but they use different techniques for reading and writing. This application note discusses the similarities and


    Original     		PDF AN998 floating-gate stmicroelectronics "serial eeprom" tunnelling diode AN931 AN996 AN997 AN998 AN999 M39432 hot electron devices

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original     		PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    stmicroelectronics eeprom

    Abstract: TSOP32 footprint TSOP32 M28256 M29W040 M39208 M39432 M39832
    Text: THE END OF THE EMULATION COMPROMISE FLASH+ is a revolutionary new concept from ST. Using the process technology of flash memories, ST has innovated designs that allow both Flash memory and EEPROM functionality to be built on a single chip. The Flash part has the same performance as a standard, low


    Original     		PDF M29W040, M28256. M39432 i22932 FLFLASH/1098 286-CJ103 stmicroelectronics eeprom TSOP32 footprint TSOP32 M28256 M29W040 M39208 M39832

    Untitled

    Abstract: No abstract text available
    Text: _ M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while


    OCR Scan     		PDF M39432 120ns M39432

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 S G S -T H O M S O N ^ 7 # * RÆQiMtliLti^TrWiDigi M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS > 120ns ACCESS TIME FLASH and EEPROM blocks > WRITE, PROGRAM and ERASE STATUS BITS


    OCR Scan     		PDF M39432 120ns 40fiA M39432 7T2T237 DCH3732

    C137E

    Abstract: IA10 M29W040 M39432 si2730
    Text: rZ J S G S -T H O M S O N M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA > 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS • 120ns ACCESS TIME FLASH and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS


    OCR Scan     		PDF M39432 120ns M39432 TSOP40 DCH3732 C137E IA10 M29W040 si2730

    Untitled

    Abstract: No abstract text available
    Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while


    OCR Scan     		PDF M39432 120ns M39432

    M39432

    Abstract: 4mbit tsop40
    Text: M39432 Single Chip 4 Mbit Flash and 256Kbit Parallel EEPROM Memory P R E L IM IN A R Y DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while


    OCR Scan     		PDF M39432 256Kbit 120ns TSOP40 M39432 4mbit tsop40

    Untitled

    Abstract: No abstract text available
    Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while


    OCR Scan     		PDF M39432 120ns M39432

    Untitled

    Abstract: No abstract text available
    Text: M39432 Single Chip 4 Mbit Flash and 256Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while


    OCR Scan     		PDF M39432 256Kbit 120ns M39432