UM 031 DIODE Search Results

Contextual Info: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode

ixys ml 075

Abstract: 50N60A
Contextual Info: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode

Contextual Info: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 11'd4403 B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B

1N416B

Abstract: 1N4162B 1N4158B 1N4159B 1N4160B 1N4161B 1N4163B 1N4164B 1N4165B 1N4166B
Contextual Info: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 1N4403B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B 1N4410B

L4448

Contextual Info: Small Signal Diodes SOD80 Mini Melf m iniBag rder 0rder NOum ber N um ber \ K ?JJ T ype 10 pcs. 500 pcs. N Sw itching type, G eneral Purpose 500m W B A V 100 70-0100 500100 LL914 70-0914 500914 L L4148 704148 504148 LL4150 70-4150 50-4150 L L4448 704448

44258

Abstract: 1N473SA 1W4751A 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B AT617 1N4166B
Contextual Info: ZENER DIODES P irt# Nominal Zener Voltjga T n t Currant M u lm u a Oynamic Impetfanc* *n<ûl 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4166B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 4 4 7 5 6 4 ü ü ü T b l 2 ITS » H P A Hermetic Schottky Diodes for Mixers and Detectors 1-18 GHz Technical Data HSCH-6000 Series Features • Low P a ra s itic H erm etic P ackage -High Frequency Performance -M eets Performance

1N3842

Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Contextual Info: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current

SMPN7316

Abstract: DIODE Z0 031
Contextual Info: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance

3068

Contextual Info: SENSITRON MBRD640CT SEMICONDUCTOR Technical Data Data Sheet 3068, Rev. - MBRD640CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection • Battery charging Features: • • •

BAT54WX

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes Maxim um Ratings Symbol

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes

smd diode JC 0p

Abstract: DIODE SMD GEM IXGH24N60AU1S
Contextual Info: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600

BC 247 B

Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25

ST1009

Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.

diode h2z

Abstract: zener h2z gy 807 en 792-13
Contextual Info: — Am79213/Am79C203/031 A M D J! Advanced Subscriber Line Interface Circuit ASLIC Device Advanced Subscriber Line Audio-Processing Circuit (ASLAC™) Device TABLE OF CONTENTS Linecard Block D ia g ra m .3

ic 6264

Abstract: 1N6264A 1N6264
Contextual Info: Emitter Specifications _ 1N6264,1N6265 Infrared Emitter Gallium Arsenide Infrared Emitting Diode — * —-rth T h e 1N 6264 a n d 1N 6265 S e rie s a re g a lliu m a rs e n id e , lig h t e m ittin g d io d e s w h ic h e m it n o n - c o h e r e n t, in f r a r e d e n e rg y . T h e y a re id e a lly

MM74HC08

Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis­ charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate

Contextual Info: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

ad 0845

Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
Contextual Info: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C