UPS SINUS CIRCUIT Search Results

single phase home based ups circuit diagram

Abstract: 3 phase UPS block diagram working and block diagram of ups 3 phase pfc controller home ups circuit diagram difference between inverter and ups DRM064 PI CONTROLLER PI voltage CONTROLLER circuit sinusoidal input ups reference design circuit
Contextual Info: Freescale Semiconductor Application Note AN3052 Rev. 0, 11/2005 Implementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064 by: Pavel Grasblum Freescale Semiconductor, Roznov CSC, Czech Republic This application note is intended as an addendum to the

Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT210N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 210 A TC=85 °C ITSM VT0 6600 A 3570A (TC=55°C) 1,0 V rT 0,85 mΩ RthJC 0,124 K/W Base plate width

Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT260N22KOF Key Parameters VDRM / VRRM 2200 V ITAVM 260 A TC = 85 °C ITSM vT0 8000 A 3570A (TC=55°C) 0,85 V rT 0,64 mΩ RthJC 0,1130 K/W Base plate width

Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT305N16KOF Key Parameters VDRM / VRRM 1600 V ITAVM 305 A TC = 85 °C ITSM 3570A 9000 A(TC=55°C) vT0 0,8 V rT 0,58 mΩ RthJC 0,1130 K/W Base plate width

SEMIX353GB126

Contextual Info: SEMiX353GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 364 A Tc = 80°C 256 A 450 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 329 A Tc = 80°C 228 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules

SEMIX503GD126H

Abstract: 80C284
Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 412 A Tc = 80°C 284 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules

Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules

UPS sinus circuit

Abstract: sine wave ups design SEMiX503GB126HDS 80C327
Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules

SEMIX703GD126HDC

Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules

Contextual Info: SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 115 A Tc = 80°C 88 A 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 97 A Tc = 80°C 73 A 225 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 160 A Tc = 80°C 123 A 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 121 A Tc = 80°C 91 A 300 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX 303GD12T4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom

skm50gb12v

Abstract: SKM50GB
Contextual Info: SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 79 A Tc = 80 °C 60 A 50 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 65 A Tc = 80 °C 49 A 50

E63532

Abstract: SKM400GA12V skm400 UPS sinus circuit
Contextual Info: SKM400GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 598 A Tc = 80 °C 451 A 400 A ICnom ICRM SEMITRANS 4 ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440 A Tc = 80 °C 329

semikron IGBT 150A 600v

Contextual Info: SEMiX152GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 229 A Tc = 80°C 177 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 195 A Tc = 80°C 146 A 450 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX404GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 618 A Tc = 80°C 475 A 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 440 A Tc = 80°C 329 A 1200 A -40 . 175 °C ICRM = 3xICnom

Contextual Info: SEMiX151GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES

SKM600GA12V

Contextual Info: SKM600GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 890 A Tc = 80 °C 671 A 600 A ICnom ICRM SEMITRANS 4 ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A Tc = 80 °C 529

E63532

Abstract: SKM300GA12V UPS sinus circuit
Contextual Info: SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 443 A Tc = 80 °C 331 A 300 A ICnom ICRM SEMITRANS 4 ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A Tc = 80 °C 264

SKM400GB12

Contextual Info: SKM400GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 598 A Tc = 80 °C 451 A 400 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440 A Tc = 80 °C 329

Contextual Info: SKM75GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 121 A Tc = 80 °C 91 A 75 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 97 A Tc = 80 °C 73 A 75

Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 79 A Tc = 80 °C 60 A 50 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 65 A Tc = 80 °C 49 A 50

200 A WELDING INVERTER DESIGN BY IGBT

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C