VCC30V Search Results

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

2SD1406

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 1Û3M AX. FEATURES: 03.2±CX2 . High DC Current Gain : hFg=300 Max. (V^jj= 5V , 1^=0.5A) & idi « r-^1 +* . Low Saturation Voltage •• VCE(sat)=1.0V(Max.)(Ic=3A,

M51977P

Abstract: h13m M51977 20P2
Contextual Info: = M f f M < 'J = 7 IC > M51977P,FP *» □ > « • ' X f ( U B I .U M D USI977U n C HIM! « * /!••%* ) * & £ f t * ü £ * W * * U a u » ? VOUT *i MOS F E T * A * iiÉ fc 1 ? Ô f t . * IE • i> - a tn A iiu r-* r. u r i '* £ * * . #1 x f Ä M

KTD880

Contextual Info: SILICON PNP TRANSISTOR TRIPLE DIFFUSED TYPE PCT PROCESS Ç APPLICATIONS ) • Audio F re qu en cy P o w e r A m p l i f ie r A p p l i c at i o n s . Ç FE A TURES ) • L ow C o l l e c t o r S a t u r a t i o n V ol t a ge : VCE(sat, = — 1. 0V(Max.) at Ic = — 3A, I B— — 0. 3A

Contextual Info: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE

Contextual Info: V : -O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS

KTN2222AS

Abstract: KTN2222S KTN2222AS SOT-23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.

2-7D101A

Abstract: 2SA1428 2SC3668
Contextual Info: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)

2SC5176

Contextual Info: 2SC5176 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • • Low Collector Saturation Voltage : VCE (sat)-°-4V (Max-) (at Ie = 3A)

TRANSISTOR 3360

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use In line operated switching power supplies in a w ide range of end use applications. This device com bines the latest state of the art

transistor ksp2222a

Abstract: KSP2222A
Contextual Info: KSP2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ce o * 40V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA-2 5 ‘C) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

TOKO 455D

Abstract: rf107 CDB455C7 CDB455 455d CFV455D 33 455d
Contextual Info: r& T O K O TK10487 NARROW BAND FM-IF AMPLIFIER FEATURES APPLICATIONS • Built-in Signal Meter Driver ■ Cellular Phones ■ Wide Operating Voltage Range ■ Cordless Telephones ■ High Limiting Sensitivity ■ VHF Radio ■ Wide Frequency Range ■ Scanners

SS0P10-P-225

Abstract: c05a
Contextual Info: TD62M3601F TENTATIVE o 3CH LOW SATURATION VOLTAGE SOURCE DRIVER Unit in mm 5.0 ± 0 .2 TD62M3601F is Multi Chip IC incorporates 3 low saturation descrete transistor PNP . • Suitable for High Efficiency Motor Drive Circuit . S50P10 1mm pitch small package sealed

2SC519A

Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.

2SC5176

Abstract: 2SC517
Contextual Info: 2SC5176 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : VCE ( s a t ) = 0.4V (Max.) (at Ie = 3A)

KTN2222AU

Abstract: KTN2222U FC100H
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c E x - 1 0 n A M a x . ; V c e = 6 0 V , V e b (o ff ) - 3 V .

HD61105

Abstract: 66205TFL X57d HCD66205L zdx20 HD66840 HD66205 HD66205TL HD66205TF HA 1115
Contextual Info: H D66205- Dot Matrix Liquid Crystal Graphic Display Common Driver with 80-Channel Outputs Description T he H D 66205F /H D 66205F L /H D 66205T F /H D 66205TFL/HD66205T/HD66205TL, the row LCD driver, features low output impedance and as many as 80 LCD outputs powered by 80 internal LCD

ic lm224

Abstract: 0581B LM124F LM124N LM224D LM224F LM224N LM324N lm324f IC LM324N
Contextual Info: Philips Semiconductors Product specification LM124/224/324/324A/ SA534/LM2902 Low power quad op amps DESCRIPTION PIN CONFIGURATION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers

2SB1018

Abstract: 2SD1411
Contextual Info: Sb TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDI SCRETE/O P TO DEj| cJ0ci75SD □ □ □ 7 T S 1 ” 0 7"- 3 3 - <£>? "56C"Ó7951 S IL IC O N NPN T R IP L E D IF F U SE D TYPE HIGH CURRENT SWITCHING APPLICATIONS. • Unit; in mm 1Q3MAX ;• POWER AMPLIFIER APPLICATIONS.

YTS4402

Contextual Info: SILICON PNP EPITAXIAL TYPE YTS4402 FOR GENERAL PURPOSE USE S WITCHING AND AMPL I F I E R APPLICATIONS. FEATURES : • Low Leakage Current : Icjry=-100nA Max. , I g g y = 1 0 0 n A ( M a x . ) @ V c e = - 3 5 V , V BEV=0.4V • Excellent DC Current G a i n Line a r i t y

Contextual Info: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.

AUIR0815STR

Abstract: AUIRS2117 st 13001 TRANSISTOR AUIR0815 ssd 545 dc drive
Contextual Info: Automotive Grade AUIR0815S BUFFER GATE DRIVER IC Features • High peak output current > 10A • Low propagation delay time • Negative turn off bias can be applied to VEE using an external supply • Two output pins permit to choose different Ron and Roff resistors.

Contextual Info: 61095 Features • • • • jn a- 2N2907A GENERAL PURPOSE PNP TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Dia 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed