VIZO Search Results

CY7C1021V30

Abstract: CY7C1021V30-15BAI
Contextual Info: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0

ABE 950

Contextual Info: fax id: 5222 7 ^ CYPRESS CY7C007 CY7C017 PRELIMINARY 3 2 K x 8/9 Dual-Port Static RAM Fully a s y n c h ro n o u s o p eratio n Features A u to m atic p ow er-dow n • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta ­ neo us ac c e s s o f th e sa m e m e m o ry location

Contextual Info: EDI8LM32513V-RP 512Kx32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 1 2 ,1 5 and 20ns • Individual Byte Enables Commercial, Industrial and Military temperature range.

Contextual Info: SEP x 7 993 PDM41097S PDM41097L PARADIGM' 4 Megabit Static RAM 4 Meg x 1-Bit Features speed parts. Writing is accomplished when the write enable (WE and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.

HYUNDAI i10

Abstract: QAA100 CY62256V25-70SNC CY62256V25-70ZC CY62256V25L-70SNC CY62256V25L-70ZC CY62256V25LL-70SNC " i10" hyundai
Contextual Info: • rn n rn n *= # r C i l h h o o CY62256V25 PRBUMINIÀRY 32K x 8 2.5V Static RAM Features active LO W ou tput enable OE and three -state drivers. The device has an au tom atic pow e r-d ow n feature, reducing the po w e r con sum p tion by m ore tha n 98% w hen deselected.

vizo

Contextual Info: CY7B185 CY7B186 CYPRESS SEMICONDUCTOR 8,192 x 8 Static RAM Features Functional Description • BiCMOS for optimum speed/power T h e C Y 7 B 1 8 5 a n d C Y 7 B 1 8 6 a re h ig h -p e r­ fo rm a n c e B iC M O S s ta tic R A M s o rg a ­ n iz ed as 8,192 w o rd s b y 8 bits. T h e s e

CY62127V

Contextual Info: fax id: 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (A0 through A 15). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0 -|g) is written into the location speci­

Contextual Info: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This

256kx32

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Contextual Info: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP

DSP5630x

Abstract: EDI8L24129V
Contextual Info: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs

Contextual Info: ¿S* r s z g g g fp r rP ìF p L > I 1 n C Y 7 C 1 3 9 9 V n i l ì L O O 32K x 8 3.0V Static RAM Features • Single 3.0V power supply • Ideal for low-voltage cache mem ory applications • High speed — 12/15 ns • Low active power — 198 mW max.)

thread communication

Abstract: multi user communication
Contextual Info: Going Multi on Itanium Tools for Multithreading and Multiprocessing Bob Kuhn, bob.kuhn@intel.com Kuck & Associates, an Intel company http://www.kai.com 217-356-2288 Kuck & Associates, an Intel company Context - SMP Drafts* Serial Itanium Launch * “Draft” is American slang for “follow closely behind”

CY62256-55SNC

Abstract: CY62256-70SNC CY62256 CY62256-55 CY62256-70 CY62256L-55SNC CY62256LL-55SNC sc007
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features o u tput enable OE and three -state drivers. T his device has an a u to m a tic pow er-dow n feature, reducing th e po w e r co n su m p ­ tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n ­

A13L

Abstract: CY7C1021V
Contextual Info: CY7C1021V V CYPRESS 64K x 16 Static RAM Features W riting to th e device is a c c o m plished by takin g chip ena b le CE and w rite enable (W E) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i throu gh l/O g ), is w ritten into the location sp e cified on the address pins (A0

256KX32

Contextual Info: EDI8LM32257V-RP ^EDI 256Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS. INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features 256Kx32 bit CMOS Static Random Access Memory Array • Fast Access Times: 12,15 and 20ns • Individual Byte Enables • User Configurable Organization

CY7B134

Abstract: CY7B135 7B135-35 f21l 48-pin TSOP I
Contextual Info: CY7B134 CY7B135 CY7B1342 ¥ CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance The CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port

Contextual Info: CY7B193 AD VAN CED INFORM ATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • High speed T h e C Y 7D 193 is a h ig h -p e rfo rm a n c e B iC M O S static R A M o rg a n iz e d as 262,144 w ords by 1 bit. E a sy m e m o ry e x p a n sio n is

004495

Abstract: A12C A15C CY62126V
Contextual Info: fax id: W OYPHESS 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/O-i through l/Og), is written into the location specified on the address pins (A 0 through A 15). If byte high enable (BHE) is LOW, then data from

Contextual Info: fax id: 5221 CY7C027/028 CY7C037/038 PRELIMINARY •= CYPRESS 32K/64Kx 16/18 Dual-Port Static RAM Features Fully a s yn ch ro n o u s o peratio n A u to m atic p ow er-dow n True D u al-P o rted m e m o ry cells w h ich allo w s im u lta ­ neo us ac c e s s o f th e s a m e m e m o ry location

Contextual Info: EDI8LM32513C-RP ^ E D I 512Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM Fast Access Times: 12,15 and 20ns TTL Compatible Inputs and Outputs Fully Static, No Clocks Surface Mount Package

EDI8F82048C70BSC

Abstract: EDI8F82048C OMA210
Contextual Info: MSX EDI8F82048C 2 MegxS SRAM Module ELECTRONIC DESIGNS. M C 2Megabitsx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi-layered 2 Meg x 8 bit CMOS Static epoxy laminate FR4 substrate.

C62256-4

Abstract: CY62256 CY62256-55 CY62256-55SNC CY62256-55ZRC CY62256-70 CY62256L-55SNC CY62256L-55ZRC CY62256LL-55SNC ZR28
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features ou tput enable OE and three -state drivers. T his device has an au to m a tic pow er-dow n feature, reducing th e po w e r co n su m p ­ tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n ­ dard 4 5 0 -m il-w id e (300-m il body w idth) SO IC, TSOP, and

266-3S

Contextual Info: _ C Y 7C 266 SEMICONDUCTOR 8192 x 8 P R O M Power Switched and Reprogram m able Features • T T L -c o m p a tib le I/O • CM O S for optim um speed/power • D ir e c t r e p la c e m e n t fo r E P R O M s • Windowed for reprogram m ability