VQE 11 Search Results

2SD2449

Abstract: 2-21F1A 2SB1594 2sb15
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO

5842s

Abstract: 5841A
Contextual Info: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

C311 Transistor

Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Contextual Info: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c839 transistor

Abstract: c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H
Contextual Info: htemational S Rectifier P D -9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all 'tail1' losses • Optimized for high operating frequency over 5kHz

transistor c900

Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Contextual Info: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses

transistor c925

Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Contextual Info: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses

IOR 450 M

Abstract: c468 c467 c463 TRANSISTORS 640 JS
Contextual Info: International S Rectifier P D - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10 js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

OCT9600

Abstract: mobile switching center (msc) Mobile Switch Center MSC
Contextual Info: O OC C T 9 6 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Modules Increasing system density while improving voice quality The OCT9600 Series of voice processor modules performs high quality echo cancellation and Voice Quality Enhancements VQE at extremely

C959

Abstract: transistor c956 C956 IRGPC50KD2 c954 30A to-247ac Diode IOR 10 dc
Contextual Info: P D - 9.1123 International »»Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c V ces = 600V • Short circuit rated -10|js @ 125°C, VQE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: MG25Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT r<:i 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode

c879 transistor

Contextual Info: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

transistor C930

Abstract: transistor c929 transistor C935 C936 C933 transistor C930 e C930 transistor transistor c936 transistor C933 c929
Contextual Info: kitemational IOR¡Rectifier PD-9.1109A IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Ie Vces = 600V Short circuit rated -10ps @ 125°C, VQE = 15V Switching-loss rating includes all "tail" losses

A0937

Abstract: 1N4532 at-614 1N3600 1N4148-1 JANTXV 1N4148UR-1 1N4148-1 1N4148-1 JAN 1N4531UR JANTX 1N4148-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER DSCC-VQ VQE-1 o-019452/Mr. December 18, 2009 Deslich/614-692-0593/bpd TO SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

transistor TO-3P Outline Dimensions

Abstract: IRGPC60K
Contextual Info: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c846 transistor

Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
Contextual Info: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz

IRGBC36

Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Contextual Info: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00

2SC5376

Contextual Info: TO SH IBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS 1.6 ± 0.2 ,0.8 ± 0 . 1, r— :— 1 Low Collector Saturation Voltage : Vqe sat W = Í5m v (Typ.)