p031l
Abstract: MTGR-P05 MTPM-P13-1JK42 y514
Text: Section 13 Drives/Motors/Motion GS series and DURAPULSE AC Drives In this interactive PDF you can: • Use bookmarks to navigate by product category Soft Starters Section 14 • Use bookmarks to save, search, print or e-mail the catalog section • Click on part #s
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e15-1
WG-237-015-x
e15-76
e15-77
p031l
MTGR-P05
MTPM-P13-1JK42
y514
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EIA 549 Class 130B transformer
Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.
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000pF
000pF
0201ZD103KAT2A
0201ZC103KAT2A
0201YC101KAT2A
0201YC271KAT2A
0201YC471KAT2A
02013A1R0CAT2A
02013A4R7CAT2A
02013A100JAT2A
EIA 549 Class 130B transformer
mcf 300.04
capacitor 225 35k 844 SMD
av 1.40.00 mkt x2 .01uf
NTC 20K honeywell
1000 rpm dc motor 12v 100watt
BO 680Y
clarostat POTENTIOMETER 73JA
SMD MARKING CODE 503b
03028BR
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IC 7447 data sheet
Abstract: y445 Y446 Y449 lts 543 data sheet Y528 y519 Y439 Y515 Y443
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161623 528 OUTPUT TFT-LCD SOURCE DRIVER WITH RAM DESCRIPTION The µ PD161623 is a TFT-LCD source driver that includes display RAM. This driver has 528 outputs, a display RAM capacity of 760,320 bits 176 pixels x 18 bits x 240 lines and, can
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PD161623
PD161623
144-color
18-bit/16-bit
IC 7447 data sheet
y445
Y446
Y449
lts 543 data sheet
Y528
y519
Y439
Y515
Y443
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256Kx1 dram pinout
Abstract: HY514264 HY514264B
Text: •HYUNDAI H Y514264B 256K x16, E xten ded Data O ut m ode DESCRIPTION T his fam ily is a 4M bit d yn am ic RAM org an ized 26 2 ,1 4 4 x 16-bit con figu ration w ith C M O S D R A M s. T he c irc u it and pro ce ss d e sign allow this d e vice to a ch ie ve high p e rfo rm a n ce and low p o w e r d issip a tio n . O p tio n a l fe a tu re s are a cce ss tim e 5 0 , 60
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HY514264B
256Kx16,
16-bit
16-bits
DQ0-DQ15)
256Kx1
256Kx1 dram pinout
HY514264
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The H YM 53641O A is a 4M x 36-bit Fast page m ode C M O S D R A M module consisting of eight H Y 5 1 17400A in 24/26 pin S O J or T S O P IIa n d four H Y514100A in 20/26 pin S O J or T S O P II on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
53641O
7400A
Y514100A
53641OAM/ALM/ATM/ALTM
HYM53641OAMG/ALMG/ATMG/ALTMG
HYM536410A/AL
HYM536410AT/ALT
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HY514260
Abstract: WRC-15 a08andoe
Text: -HYUNDAI SEMICONDUCTOR H Y514260 Series 256Kx 16-blt CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The Y514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514260
256Kx
16-bft
16-bit
400mil
40pin
40/44pin
1AC11-00-APR93
WRC-15
a08andoe
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR H Y514170 S e r ie s 256K X 16-bit CMOS ORAM with 2 WE PRELIMINARY DESCRIPTION The Y514170 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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Y514170
16-bit
HY514170
400mil
40pin
40/44pin
1AC09-00-APR93
4b75Dflfl
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HY514260B
Abstract: HY514260BJ
Text: •HYUNDAI H Y514260B 256KX16, C M O S D R A M w ith /2 C A S DESCRIPTION T his fam ily is a 4M bit d yn am ic RAM o rg an ized 26 2 ,1 4 4 x 16-bit con figu ration w ith C M O S D R A M s. T he c irc u it and pro ce ss de sig n a llow this d e vice to a ch ie ve high p e rfo rm a n ce and low p o w e r d issip a tio n . O p tio n a l fe a tu re s are a cce ss tim e 5 0 , 60
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HY514260B
256Kx16,
16-bit
16-bits
DQ0-DQ15)
256Kx16
HY514260BJ
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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512kx4
Abstract: 7150M
Text: Y514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.
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HY514400A
HY514400AJ
HY514400ALJ
Y514400AT
HY514400ALT
HY514400AR
Y514400ALR
50/60/70only.
128ms
512kx4
7150M
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CX-381
Abstract: No abstract text available
Text: -HYUNDAI Y514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514170B
256KX
16-bit
400mil
40pin
40/44pin
825mW
CX-381
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IC TX-2-c
Abstract: Y51480 5LCAC
Text: Y514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The Y5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The Y514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514800B
512KX
HY5148006
1AC17-00-MAY94
HY514800BJC
HY514800BLJC
HY514800BSUC
IC TX-2-c
Y51480
5LCAC
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HY514260B
Abstract: HY514260BJC 404Q0 HY514260 514260
Text: - « H Y U N D A I Y514260B Series 256K x 16-bit CMOS DRAM with 2CAS DESCRIPTION The Y514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
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HY514260B
16-bit
400mil
40pin
40/44pin
404Q0
X30SC
HY514260BJC
HY514260
514260
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Untitled
Abstract: No abstract text available
Text: HY HYUNDAI 514403B Series 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The Y514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The Y514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,
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514403B
HY514403B
4b75Gfifi
1AC15-10-MAY95
HY514403BJ
HY514403BLJ
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Untitled
Abstract: No abstract text available
Text: Y514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The Y514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The Y514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY514100A
HY514100A
1AC06-30-MAY95
HY514100AJ
HY514100ALJ
HY514100AT
HY514100ALT
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The Y514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The Y514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514400B
1AC11-00-MAY94
4b75Gflfl
HY514400BJ
HY514400BU
HY514400BSU
HY514400BT
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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Untitled
Abstract: No abstract text available
Text: HYUNDAI Y514410B Series 1M x 4-bit CMOS DRAM with Write-Per-Bit PRELIMINARY DESCRIPTION The Y514410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The Y514410B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced
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HY514410B
hi0400
02CK0
1AC19-00-MAY94
HY514410BJ
HY514410BU
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Untitled
Abstract: No abstract text available
Text: -MY UH DA I • Y514400B lMx4, Fast Page mode DESCRIPTION This fam ily is a 4 M bit dynam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 -b it c o n f ig u r a t io n w ith ( F a s t p a g e ) m o d e C M O S DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process
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HY514400B
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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256KX
16-bit
HY514170B
400mil
40pin
40/44pin
1AC21-00-MAY94
PQS702
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Untitled
Abstract: No abstract text available
Text: Y514100A Series ’H Y U N D A I 4M x 1 -bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit dynam ic RAM organized 4,194,304 x 1-bit configuration w ith C M O S DRAMs. The circuit and process design allow this d e vice to achieve high perform ance and low pow er dissipation.
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HY514100A
HY514100AJ
HY514100ALJ
HY514100AT
HY514100ALT
HY514100AR
HY514100ALR
128ms
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Untitled
Abstract: No abstract text available
Text: Y514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The Y514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The Y514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY514100B
4L750Ã
000413b
1AC09-10-MA
HY514100BJ
HY514100BLJ
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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