Y514 Search Results

256Kx1 dram pinout

Abstract: HY514264 HY514264B
Contextual Info: •HYUNDAI H Y514264B 256K x16, E xten ded Data O ut m ode DESCRIPTION T his fam ily is a 4M bit d yn am ic RAM org an ized 26 2 ,1 4 4 x 16-bit con figu ration w ith C M O S D R A M s. T he c irc u it and pro ce ss d e sign allow this d e vice to a ch ie ve high p e rfo rm a n ce and low p o w e r d issip a tio n . O p tio n a l fe a tu re s are a cce ss tim e 5 0 , 60

Contextual Info: »HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The H YM 53641O A is a 4M x 36-bit Fast page m ode C M O S D R A M module consisting of eight H Y 5 1 17400A in 24/26 pin S O J or T S O P IIa n d four H Y514100A in 20/26 pin S O J or T S O P II on a 72 pin glass-epoxy printed circuit board.

HY514260

Abstract: WRC-15 a08andoe
Contextual Info: -HYUNDAI SEMICONDUCTOR H Y514260 Series 256Kx 16-blt CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The Y514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: HYUNDAI SEMICONDUCTOR H Y514170 S e r ie s 256K X 16-bit CMOS ORAM with 2 WE PRELIMINARY DESCRIPTION The Y514170 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

HY514260B

Abstract: HY514260BJ
Contextual Info: •HYUNDAI H Y514260B 256KX16, C M O S D R A M w ith /2 C A S DESCRIPTION T his fam ily is a 4M bit d yn am ic RAM o rg an ized 26 2 ,1 4 4 x 16-bit con figu ration w ith C M O S D R A M s. T he c irc u it and pro ce ss de sig n a llow this d e vice to a ch ie ve high p e rfo rm a n ce and low p o w e r d issip a tio n . O p tio n a l fe a tu re s are a cce ss tim e 5 0 , 60

Contextual Info: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

512kx4

Abstract: 7150M
Contextual Info: Y514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.

CX-381

Contextual Info: -HYUNDAI Y514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

IC TX-2-c

Abstract: Y51480 5LCAC
Contextual Info: Y514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The Y5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The Y514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HY514260B

Abstract: HY514260BJC 404Q0 HY514260 514260
Contextual Info: - « H Y U N D A I Y514260B Series 256K x 16-bit CMOS DRAM with 2CAS DESCRIPTION The Y514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access

Contextual Info: •HYUNDAI Y514100A 4M x1, F as t Page m ode DESCRIPTION T h is f a m ily is a 4M b it d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 x 1 -b it c o n f ig u r a t io n w ith F a s t P a g e m o d e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s

Contextual Info: HY HYUNDAI 514403B Series 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The Y514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The Y514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,

Contextual Info: Y514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The Y514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The Y514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: HYUNDAI Y514410B Series 1M x 4-bit CMOS DRAM with Write-Per-Bit PRELIMINARY DESCRIPTION The Y514410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The Y514410B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

Contextual Info: -MY UH DA I • Y514400B lMx4, Fast Page mode DESCRIPTION This fam ily is a 4 M bit dynam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 -b it c o n f ig u r a t io n w ith ( F a s t p a g e ) m o d e C M O S DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process

Contextual Info: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

p031l

Abstract: MTGR-P05 MTPM-P13-1JK42 y514
Contextual Info: Section 13 Drives/Motors/Motion GS series and DURAPULSE AC Drives In this interactive PDF you can: • Use bookmarks to navigate by product category Soft Starters Section 14 • Use bookmarks to save, search, print or e-mail the catalog section • Click on part #s

Contextual Info: Y514100A Series ’H Y U N D A I 4M x 1 -bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit dynam ic RAM organized 4,194,304 x 1-bit configuration w ith C M O S DRAMs. The circuit and process design allow this d e vice to achieve high perform ance and low pow er dissipation.

Contextual Info: Y514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The Y514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The Y514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

IC 7447 data sheet

Abstract: y445 Y446 Y449 lts 543 data sheet Y528 y519 Y439 Y515 Y443
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161623 528 OUTPUT TFT-LCD SOURCE DRIVER WITH RAM DESCRIPTION The µ PD161623 is a TFT-LCD source driver that includes display RAM. This driver has 528 outputs, a display RAM capacity of 760,320 bits 176 pixels x 18 bits x 240 lines and, can

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .