000E435 Search Results

DO-204AP

Abstract: DO204AP Package RG1 Series
Contextual Info: 3890137 GENL INSTR, POWER 3flT0137 000E435 h ^ T~OZ~ 3 ÿ :^ R G 1 S E R I E S -¿it , INIATURE G LASS PASSIVATED JUNCTION FAST SW ITCHING'RECTIFIER VOLTAGE RANGE SO to 1000 Volts CU RR EN T 1.0 Ampere DQ-204AP FEATURES • High temperature metallurgically bonded — no com ­

Contextual Info: dF|3û1G137 000E435 h 3890137 GENL INSTR, POWER T'-0 3- 3 R uG 1a«SyEER I EE S n ni « S t INIATURE GLASS PASSIVATED JUNCTION FAST sWlT&HING ÌRECTIFIER INSTIm m VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere D0-204AP FEA TU R ES • High tem perature m etallurglcally bonded — no com ­

b0615

Abstract: B0180 BD139 2N5192 BD441 2N4923 2N60 2N4918 2N4919 bd679, bd680 2N4921
Contextual Info: o Top View TYPE NO. NPN PNP ic PD A (W) MAX BVCBO BVCEO <V) (V) hFE @ Ic (mA) Bottom View VCE(SAT) @ IC (V) (A) fT (MHz) MIN MIN MIN MAX 2N4921 2N4918 1.0 30 40 40 30 150 2N4922 2N4919 1.0 30 60 60 30 150 500 0.6 1.0 3.0 2N4923 2N4920 1.0 30 80 80 30 150

Contextual Info: 3 2 K x 8 mosaic SRAM MSM832-55/70/85/10 Issue 4.2 : JUNE 1996 semiconductor, inc. 32,768 x 8 CMOS High Speed Static RAM Description Features The MSM832 is a high speed Static RAM organ­ ised as 32K x 8 available with access times of 5 5 ,7 0 ,8 5 or 100 ns. The device is available in