0603CAP Search Results

K4S560832E

Abstract: K4S561632E
Contextual Info: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004

K4S281632F

Abstract: m464s1724f K4S281632
Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

m464s64* samsung

Abstract: K4S560832E K4S561632E
Contextual Info: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004

Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004

Contextual Info: KMM464S924AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.0 January. 2004 Rev. 1.0 January. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 0.0 December, 2003 - First release

M464S0924MT1-L1H

Contextual Info: M464S0924MT1 PC100 SODIMM M464S0924MT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924MT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M464S1654BT2

Abstract: M464S1654BT2-L75
Contextual Info: M464S1654BT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S1654BT2 PC133 SODIMM M464S1654BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

Contextual Info: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

K4S281632F

Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004 64MB, 128MB Unbuffered SODIMM

Contextual Info: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD

M464S0924CT1

Abstract: M464S0924CT1-L1H M464S0924CT1-L1L
Contextual Info: M464S0924CT1 PC100 SODIMM M464S0924CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924CT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

m464s16* samsung

Abstract: K4S561632E K4S560832E 0603CAP K4S56163
Contextual Info: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.1 September, 2003 Rev. 1.1 September, 2003 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 June, 2003

KMM464S924

Contextual Info: KMM464S924BT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release

Contextual Info: M464S0924BT1 PC133 SODIMM Revision History Revision 0 Oct. 1999 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S0924BT1 PC133 SODIMM M464S0924BT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

K4S281632E

Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Revision 1.4 March. 2004 Rev. 1.4 March. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 November, 2002 - First release

M464S0924CT1

Contextual Info: M464S0924CT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S0924CT1 PC133 SODIMM M464S0924CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

Contextual Info: M464S0924ETS PC133 SODIMM M464S0924ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous GENERAL DESCRIPTION FEATURE The Samsung M464S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

K4S511632B

Abstract: M464S3354BTS-C
Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004

i 3005-2

Abstract: SO-DIMM 144-pin gls 126 VM466S924
Contextual Info: Product Specifications PART NO: VL466S924-GAS/GHS/GLS REV: 1.4 General Information 64MB 8Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VM466S924 is a 8M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 4 CMOS 8Mx16 bits with 4banks Synchronous DRAMsin TSOP-II400mil packages and a

M464S0924BT1

Abstract: M464S0924BT1-L75
Contextual Info: M464S0924BT1 PC133 SODIMM Revision History Revision 0 Oct. 1999 -PC133 First Published. Rev. 0 Oct. 1999 M464S0924BT1 PC133 SODIMM M464S0924BT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

M464S0924CT2-L75

Abstract: M464S0924CT2
Contextual Info: M464S0924CT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S0924CT2 PC133 SODIMM M464S0924CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION