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    1000V TRANSISTOR BJT Search Results

    1000V TRANSISTOR BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1000V TRANSISTOR BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		PDF Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original     		PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L

    Untitled

    Abstract: No abstract text available
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		PDF VG101 VG101 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		PDF VG101 VG101 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		PDF VG101 VG101 1-800-WJ1-4401

    MOTOROLA TRANSISTOR

    Abstract: No abstract text available
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND Gain Ctrl GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		PDF VG111 VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR

    JESD22-A114

    Abstract: MMBT2222 VG111 VG111-F VG111-PCB1900 VG111-PCB2100 MOTOROLA TRANSISTOR
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND Gain Ctrl GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		PDF VG111 1-800-WJ1-4401 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB1900 VG111-PCB2100 MOTOROLA TRANSISTOR

    MOTOROLA TRANSISTOR

    Abstract: No abstract text available
    Text: VG111 The Communications Edge TM Product Information PCS/UMTS-band Variable Gain Amplifier GND GND GND 5 GND Gain Ctrl 6 4 3 2 1 28 GND GND 9 27 GND 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 16 17 18 19 20 21 GND GND N/C GND N/C 22 GND


    Original     		PDF VG111 VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR

    JESD22-A114

    Abstract: MMBT2222 VG101 VG101-F VG101-PCB IN1125 MOTOROLA TRANSISTOR
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		PDF VG101 VG101 1-800-WJ1-4401 JESD22-A114 MMBT2222 VG101-F VG101-PCB IN1125 MOTOROLA TRANSISTOR

    lcd inverter sumida notebook schematic

    Abstract: notebook lcd inverter board schematic Notebook lcd inverter schematic BJT 3906 lcd inverter board schematic diode DN102 6V Fluorescent lamp schematic sumida backlight inverter CTX210659 6V DC-AC Fluorescent lamp
    Text: DN-102 Design Note UCC3972 BiCMOS Cold Cathode Fluorescent Lamp Driver Controller, Evaluation Board and List of Materials By Eddy Wells vided in Table 2. As explained in the text that follows, the board components can be easily modified to implement alternate dimming techniques and to operate with higher voltage lamps.


    Original     		PDF DN-102 UCC3972 lcd inverter sumida notebook schematic notebook lcd inverter board schematic Notebook lcd inverter schematic BJT 3906 lcd inverter board schematic diode DN102 6V Fluorescent lamp schematic sumida backlight inverter CTX210659 6V DC-AC Fluorescent lamp

    JESD22-A114

    Abstract: MMBT2222A VG101 VG101-F VG101-PCB mobile phone frequency receiver IC 800S11
    Text: VG101 Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 6 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND


    Original     		PDF VG101 VG101 JESD22-A114 MMBT2222A VG101-F VG101-PCB mobile phone frequency receiver IC 800S11

    Untitled

    Abstract: No abstract text available
    Text: VG101 Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 6 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND


    Original     		PDF VG101 VG101 1-800-WJ1-4401

    MOTOROLA TRANSISTOR

    Abstract: VG111-PCB1900 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB2100 variable resistor 47
    Text: VG111 PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		PDF VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR VG111-PCB1900 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB2100 variable resistor 47

    VG111-PCB2100

    Abstract: VG111-PCB1900
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND


    Original     		PDF VG111 VG111 1-800-WJ1-4401 VG111-PCB2100 VG111-PCB1900

    lcd inverter sumida notebook schematic

    Abstract: Notebook lcd inverter schematic IR10MQ040 CD7510 CTX210659 inverter backlight notebook schematic 6V DC-AC Fluorescent lamp schematic sumida backlight inverter 2F PNP SOT23 MMSZ4690T1
    Text: DN-102 Design Note UCC3972 BiCMOS Cold Cathode Fluorescent Lamp Driver Controller, Evaluation Board and List of Materials By Eddy Wells vided in Table 2. As explained in the text that follows, the board components can be easily modified to implement alternate dimming techniques and to operate with higher voltage lamps.


    Original     		PDF DN-102 UCC3972 lcd inverter sumida notebook schematic Notebook lcd inverter schematic IR10MQ040 CD7510 CTX210659 inverter backlight notebook schematic 6V DC-AC Fluorescent lamp schematic sumida backlight inverter 2F PNP SOT23 MMSZ4690T1

    lcd inverter sumida notebook schematic

    Abstract: Notebook lcd inverter schematic notebook lcd inverter board schematic 6V DC-AC Fluorescent lamp inverter backlight notebook schematic BJT 3906 UDG-99114 CTX210652 notebook Cold Cathode Fluorescent Lamp Driver CTX210655
    Text: DN-102 Design Note UCC3972 BiCMOS Cold Cathode Fluorescent Lamp Driver Controller, Evaluation Board and List of Materials By Eddy Wells vided in Table 2. As explained in the text that follows, the board components can be easily modified to implement alternate dimming techniques and to operate with higher voltage lamps.


    Original     		PDF DN-102 UCC3972 lcd inverter sumida notebook schematic Notebook lcd inverter schematic notebook lcd inverter board schematic 6V DC-AC Fluorescent lamp inverter backlight notebook schematic BJT 3906 UDG-99114 CTX210652 notebook Cold Cathode Fluorescent Lamp Driver CTX210655

    STGH20N50

    Abstract: power BJT anti saturation diode bjt gate drive circuit power BJT 1000 volt vce Drive Base BJT STGH20N50 datasheet transistor BJT Driver 1000v Transistor bjt Switching Behaviour of IGBT Transistors stgh20
    Text: APPLICATION NOTE INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


    Original     		PDF

    STGH20N50

    Abstract: power BJT anti saturation diode TP 220 bjt Drive Base BJT 20A igbt IGBT DRIVER SCHEMATIC 3 PHASE small signal BJT transistor power BJT Switching Behaviour of IGBT Transistors transistor BJT Driver
    Text: APPLICATION NOTE  INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


    Original     		PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    fuji 2di

    Abstract: 1000v Transistor bjt power transistor bjt 1000 a Collmer Semiconductor 2DI 75Z-100 bl25
    Text: 2-Pack BJT 1000 V 75 A A t / 1 75Z-100 # I i/i/ EMfp^nK 2DI , < 7 - POWER TRANSISTOR MODULE : F ea tures • ¡SWfiE High Voftage • 7 U — f r ' i y > 5 *9 *4 • ASO M £ i ' • K rtft Inciuding Free Wheeling Diode Excellent Safe Operating Area Insulated Type


    OCR Scan     		PDF 75Z-100 E82988 Tj-125Â fuji 2di 1000v Transistor bjt power transistor bjt 1000 a Collmer Semiconductor 2DI 75Z-100 bl25

    bjt 100a

    Abstract: 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210
    Text: Ä ID- / I1 2 2-Pack BJT 1000 V 100 a 0 2^ - ' V 1 0W0 V0 W 1 I Outline Drawings POWER TRANSISTOR MODULE i Features • i6 IiJ ± High Voltage # 7 ' J —sfc'f U > 9 ¥ A =t — KF*9/8 • ASO tf'jAi' Including Free Wheeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 2D11002-100 E82988 Ic-100A, 00A/jws bjt 100a 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210

    diode 060

    Abstract: power transistor bjt 1000 a 1150Z-100 M210 power BJT 150A bs245
    Text: 2 -Pack BJT 1000 V 150 a 2DI150Z-100 Ä I-/I • V JK J * ! Outline Drawings / < 7 - h :7 > i > X 9 * ' ? n . - U POWER TRANSISTOR MODULE Features • S H E : High Voltage t7 U — ¥<4 # ASO If f eX' • KrtMc including Free Wheeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 1150Z-100 150At 50A///S diode 060 power transistor bjt 1000 a 1150Z-100 M210 power BJT 150A bs245

    mos Turn-off Thyristor

    Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
    Text: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


    OCR Scan     		PDF

    pnp transistor 1000v

    Abstract: mos Turn-off Thyristor applications of mos controlled thyristor 1000V 2A BJT SGSP363
    Text: n ^ rz 7 # , S G S -T H O M S O N 5 [L [I T [H ] M D © Ì T E C H N IC A L N O TE AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS (High Injection MOS) devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


    OCR Scan     		PDF