1200JXH23 Search Results

1200JXH23

Abstract: 120HVt
Contextual Info: TO SH IBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 2 - <¿3.5 ± 0.2 • • • Repetitive Peak Reverse Voltage : V r r m = 6000 V Average Forward Current : If AV = 1200 A

Contextual Info: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE 1 2 Q Q J SILICON DIFFUSED TYPE X H 2 3 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 5 ± 0.2 • • • Repetitive Peak Reverse Voltage : V r r m = 6000V Average Forward Current : Ip AV = 1200A Double Side Cooling

1200JXH23

Contextual Info: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • 2 - ¿3.5 ± 0.2 depth 2.1 ±0.4 Repetitive Peak Reverse Voltage : V rrm —6000V Average Forward Current : Ijr AV = 1200A

Contextual Info: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V rrm = 6000V Average Forward Current : Ijr AV = 1200A Double Side Cooling M A X IM U M RATING

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

6B4B41

Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Contextual Info: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that