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Walsin Technology Corporation HH15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HH15N100J500CT	Cut Tape	37,514		1	1 $0.1 10 $0.021 100 $0.0095 1000 $0.00561 10000 $0.00469	Buy Now
	HH15N100J500CT	Digi-Reel	37,514		1	1 $0.1 10 $0.021 100 $0.0095 1000 $0.00561 10000 $0.00469	Buy Now
	HH15N100J500CT	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00428	Buy Now
Walsin Technology Corporation RF15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF15N100J500CT	Cut Tape	16,655		1	1 $0.1 10 $0.059 100 $0.0276 1000 $0.01685 10000 $0.01435	Buy Now
	RF15N100J500CT	Digi-Reel	16,655		1	1 $0.1 10 $0.059 100 $0.0276 1000 $0.01685 10000 $0.01435	Buy Now
	RF15N100J500CT	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01796	Buy Now
Mouser Electronics	RF15N100J500CT		417			1 $0.1 10 $0.02 100 $0.01 1000 $0.006 10000 $0.005	Buy Now
TME	RF15N100J500CT				10,000	1 - 10 - 100 - 1000 - 10000 $0.00407	Get Quote
Walsin Technology Corporation MT15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT15N100J500CT	Digi-Reel	10,640		1	1 $0.1 10 $0.027 100 $0.0153 1000 $0.00938 10000 $0.00702	Buy Now
	MT15N100J500CT	Cut Tape	10,640		1	1 $0.1 10 $0.027 100 $0.0153 1000 $0.00938 10000 $0.00702	Buy Now
Mouser Electronics	MT15N100J500CT					1 $0.1 10 $0.007 100 $0.003 1000 $0.002 10000 $0.002	Get Quote
Newark	MT15N100J500CT	Reel	50,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.004	Buy Now
	MT15N100J500CT	Cut Tape	4,140		10	1 - 10 $0.04 100 $0.014 1000 $0.006 10000 $0.006	Buy Now
TME	MT15N100J500CT		13,000		1,000	1 - 10 - 100 - 1000 $0.00213 10000 $0.00213	Buy Now
Littelfuse Inc IXFH15N100P MOSFET N-CH 1000V 15A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH15N100P	Tube	873		1	1 $12.56 10 $12.56 100 $7.57567 1000 $6.19775 10000 $6.19775	Buy Now
RS	IXFH15N100P	Bulk		8 Weeks	30	1 - 10 - 100 $9.59 1000 $9.59 10000 $9.59	Get Quote
Littelfuse Inc IXFT15N100Q3 MOSFET N-CH 1000V 15A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT15N100Q3	Tube	150		1	1 $17.52 10 $17.52 100 $11.52367 1000 $17.52 10000 $17.52	Buy Now
Newark	IXFT15N100Q3	Bulk			300	1 - 10 - 100 - 1000 $11.71 10000 $11.71	Buy Now
RS	IXFT15N100Q3	Bulk		8 Weeks	30	1 - 10 - 100 $17.27 1000 $17.27 10000 $17.27	Get Quote

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15N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000	Original	PDF	15N100C O-220AB O-263
15N100C Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	PDF	15N100C O-220AB O-263 728B1 15N100C 15n10 TO-263AA IXGp 15N100C TO-220 footprint
15n10 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	15N100Q 15N100Q O-247 O-268 O-268AA 15n10
Untitled Abstract: No abstract text available Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	PDF	15N100C O-220AB O-263 728B1
15N100Q Abstract: 15n10 15N100 IXFH15N100Q Text: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on = IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	15N100Q O-247 15N100Q 15n10 15N100 IXFH15N100Q
15n10 Abstract: 15N100C 15N100 Text: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N100C O-220AB O-263 15n10 15N100C 15N100
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	15N100Q 15N100Q O-247 O-268 O-268AA
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N100C 15N100C O-220AB O-263
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	15N100C 15N100C O-268 O-247 O-268AA
15N100 Abstract: IXTN 79 N 20 IXTN15N100 Text: MegaMOSTMFET IXTN 15N100 VDSS = 1000 V = 15 A = 0.6 Ω ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	PDF	15N100 OT-227 15N100 IXTN 79 N 20 IXTN15N100
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	15N100C 15N100C O-268 O-247 O-268AA
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class 1000 V 15 A 0.7 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD IXFH Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	15N100Q O-247
15n10 Abstract: 15N100 15N100Q IXFH15N100Q Text: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class VDSS = ID25 = RDS on = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	15N100Q O-247 15n10 15N100 15N100Q IXFH15N100Q
15N100 Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1 Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings	Original	PDF	IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 14N100 15N100 15N100 IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1

15N100 Abstract: No abstract text available Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A	OCR Scan	PDF	15N100 OT-227 Cto150 C2-90 C2-91 15N100
1SN10 Abstract: No abstract text available Text: IXYS 15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs	OCR Scan	PDF	IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10
Untitled Abstract: No abstract text available Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings	OCR Scan	PDF	IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150
D1488 Abstract: TO-247 AD Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings	OCR Scan	PDF	IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD
15N100 Abstract: 15n10 14N100 Text: OIXYS HiPerFET Power MOSFETs D ^D S S IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on n 1000 V 14 A 0.75 Q 1000 V 15 A 0.7 trr < 200 ns Preliminary data m m m ÊSm Symbol Test Conditions	OCR Scan	PDF	IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 15N100 O-247 247TM 15n10
15N100 Abstract: No abstract text available Text: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	IXFH/IXFX15 14N100 15N100 K30Ts
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	PDF	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
ixtn15n100 Abstract: No abstract text available Text: MegaMOS FET 15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient	OCR Scan	PDF	IXTN15N100 OT-227 000E21D ixtn15n100

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15N100 Price and Stock

Walsin Technology Corporation HH15N100J500CT

Walsin Technology Corporation RF15N100J500CT

Walsin Technology Corporation MT15N100J500CT

Littelfuse Inc IXFH15N100P

Littelfuse Inc IXFT15N100Q3

15N100 Datasheets Context Search

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15N100Q

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15N100

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D1488

15N100

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75N1

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ixys ixfn 55n50

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