160V 30A TRANSISTOR Search Results

IRF250

Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

Contextual Info: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available

2N5330

Abstract: 2N6338 2N6341 SDT44331 SDT44335 1030A
Contextual Info: lo n tra ti ÄTTÄH < MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CHIP NUM BER dT\ CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)

transistor 2n5330

Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Contextual Info: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

c106 TRANSISTOR

Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
Contextual Info: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

C106V

Abstract: c106 TRANSISTOR c08c C08-C
Contextual Info: -Jfolitron Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

Contextual Info: 8368602 S OL I TRON DEVICES I NC TS 95D 02887 D D E | û 3 b û t , D 2 GODSfifl? S T ~ MT^iL© _ "_ Z - Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION

120v 10a transistor

Abstract: 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor
Contextual Info: ^atitran [?[M>[B y Tr © ä ? ä il Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

Solitron Transistor

Contextual Info: .8 3 6 8 6 0 2 SOL IT R O N D E V I C E S INC 95D SOLITRON DEVICES INC ^5 0 2853 D ~ r ~ •?-/ 5^ DE |fl3bflbD5 00D2flS3 0 » » © i r ©ättäiksx n \< Dev/'ces, Inc. MEDIUM TO HIGH VOLTAGE, FAST SW ITCHING N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR

74c74

Contextual Info: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)

c107 TRANSISTOR equivalent

Abstract: transistor c107 m TRANSISTOR C107 c106 TRANSISTOR c107 TRANSISTOR
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC TS 95D 02 8 9 7 DeT| a3t,abOH □□□Eflcì7 fi D 3 3 - ^ 3 f~ Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

Contextual Info: ^Ælltran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

Contextual Info: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE » • ^0^7250 □ GlV'ìTfl 1 ■ T 0 S 4 TOSHIBA FIELD EFFECT TRANSISTOR_ Y T F P 9*59 SILICON N CHANNEL MOS TYPE (ir - YTFPZoZ MOSI) INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

transistor c101

Abstract: c18v 2N6061 2N6382 2N5678 2N6377 SDT3604 SDT3901 SDT3904 c101 TRANSISTOR
Contextual Info: ^Ælltran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

Contextual Info: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

160V 30A TRANSISTOR

Abstract: power transistor 200V, 30A
Contextual Info: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

SML2005SMD1

Abstract: LE17 8749
Contextual Info: N-CHANNEL POWER MOSFET SML2005SMD1 • Low RDS on MOSFET Transistor. • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Supply, Motor Controls and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: -Jfoutran P l M i M ? © Â ? M ,© ( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 68 CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" a lso available)

Contextual Info: N-CHANNEL POWER MOSFET SML2005SMD1 • Low RDS on MOSFET Transistor. • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Supply, Motor Controls and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)